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西安电子科技大学微电子学院
中科院半导体所
中科院微电子所
北京大学微电子院
清华大学信息科学技术学院
中科院上海微系统与信息所
西安中为光电科技公司
 
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科研论文(杂志和国际会议)-2016年
  审核人:

第一部分:期刊论文(125篇)
1. Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layerfor a Triboelectric
   
Nanogenerator
     ACS Nano,Vol.10,No.6,pp:6131-6138,2016.Cui Nuanyang,Gu Long,Lei Yimin,Liu Jinmei,Qin Yong,
   
Ma Xiaohua,Hao Yue,Wang Zhong Lin

2. Mixed-solvent-vaporannealing of perovskite for photovoltaic device efficiency enhancement
    Nano Energy,Vol.28,pp:417425,2016.XuSun,  ChunfuZhang, JingjingChang,  HaifengYang,  HeXi, GangLu,  
   
DazhengChen, ZhenhuaLin,  XiaoliLu,  JinchengZhang,  YueHao

3. Ultra-lightweightresistive switching memory devices based on silk fibroin
   Small,Vol.12,No.25,pp:3360,2016.Hong Wang, Bowen Zhu , Hua Wang , Xiaohua Ma ,  Yue Hao , Xiaodong Chen

4. Physicallytransient resistive switching memory based on silk protein
    Small,Vol.12, No.20, pp:2715,2016.Hong Wang, Bowen Zhu , Xiaohua Ma , Yue Hao , and Xiaodong Chen

5. Boosting the performance of planar heterojunction perovskite solar cell by controlling theprecursor purity of perovskite
   
material
   Journal of Materials Chemistry A,Vol.4,No.3,pp:887893,2016.Jingjing Chang,  Hai Zhu,  Bichen Li,  Furkan
   
HalisIsikgor, Yue Hao,  Qinghua Xu and Jianyong Ouyang

6. Enhancing the Photovoltaic Performance of Planar Heterojunction Perovskite Solar Cells byDoping the Perovskite Layer
   with
Alkali Metal Ions
   Journal of Materials Chemistry A,Vol.4,No.42,pp:16546-16552,2016.Jingjing Chang,  Zhenhua Lin,  Hai Zhu,Furkan
    HalisIsikgor,
Qing-Hua Xu,  Chunfu Zhang,  Yue Hao,  JianyongOuyang

7. Enhancing the planar heterojunction perovskite solar cell performance through tuning theprecursor ratio
     Journal of Materials Chemistry A, Vol.4,No.20,pp:7943-7949,2016.JingjingChang,  Hai Zhu,  Juanxiu Xiao,
     Furkan Halis Isikgor,
ZhenhuaLin, Yue Hao,  Kaiyang Zeng,  Qing-Hua Xuc and Jianyong Ouyang

8. Elucidating the charge carrier transport and extraction in planar heterojunction perovskitesolar cells by Kelvin probe force
   microscopy
    Journal of Materials Chemistry A,Vol.4,No.44pp:17464-17472,2016.JingjingChang, Juanxiu Xiao, Zhenhua Lin,  
    Hai Zhu,
Qing-Hua Xu, Kaiyang Zeng, Yue Hao,  Jianyong Ouyang

9. High-Mobility Ambipolar Organic Thin-Film Transistor Processed From a NonchlorinatedSolvent
    ACS Applied Materials & Interfaces,Vol.8, No.37,pp:24325-24330,2016.PrashantSonar,  Jingjing Chang,
    Jae H. Kim,
Kok-Haw Ong,  EliotGann, Sergei Manzhos,  Jishan Wu,  and Christopher R McNeill

10. Analysisof the Breakdown Characterization Method in GaN-Based HEMTs
      IEEE Transactionson Power Electronics,Vol.31,No.2,pp:1517-1527,2016.Zhao ShengLei, Hou Bin, Chen Wei Wei,
     
Mi Min Han, Zheng Jia Xin, Zhang Jin Cheng, Ma XiaoHua, Hao Yue

11. Spatiallyresolved and orientation  dependent Raman mapping  of epitaxiallateral overgrowth  nonpolar a-plane GaN
     
on r-plane   sapphire
       Scientific Reports,Vol.6,]2016.TengJiang,  Sheng-rui Xu,  Jin-cheng Zhang, Yong Xie , Yue Hao

12. Lowtemperature aqueous solution-processed Li doped ZnO buffer layers for highperformance inverted organic solar cells
       Journal of Materials Chemistry C, Vol.4,No.25,pp:6169-6175,2016.ZhenhuaLin,  Jingjing Chang,  Chunfu Zhang,
       
Jincheng Zhang,  Jishan Wuband Yue Hao

13. Interface studies of the planar heterojunction perovskite solar cells
      Solar Energy Materials and Solar Cells,Vol.15,pp:783-790,2016.ZhenhuaLin,  JingjingChang,  JuanxiuXiao,
      HaiZhu,
Qing-HuaXu, ChunfuZhang,  JianyongOuyang,  YueHao

14. The in-situObservation and Investigation on the Formation mechanism of the Nanocavities inTiO2 Nanofibers
      Cryst Eng Comm,Vol.18, No.40,pp:7772-7779,2016.Yimin Lei, Jian Li,  Fuyi Chen,  Zhan Wang,  Hongwei Liu,
       XiaohuaMa*,
Zongwen Liu

15. Effect of polyelectrol yteinterlayer on efficiency and stability of p-i-n perovskite solar cells
       Solar Energy,Vol.139, pp:190198,2016.HaifengYang,  Jincheng Zhang,  Chunfu Zhang,  Jingjing Chang,
        ZhenhuaLin,
Dazheng Chen,  Xu Sun,  He Xi,  Genquan Han, Yue Hao

16.  Controllingaggregation and crystallization of solution processed diketo pyrrolopyrrolebased polymer for high
       performance thin
film transistors by pre-metered slotdie coating process
       Organic Electronics,Vol36, pp:113-119,2016.JingjingChang,  Prashant Sonar,  Zhenhua Lin,  Chunfu Zhang,
        JieZhang,
Yue Hao,  Jishan Wu

17. Demonstrationof InAlN/AlGaN high electron mobility transistors with an enhanced breakdownvoltage by pulsed metal
       organic
chemical vapor deposition
      Applied Physics Letters,Vol.108,No.1,2016.JunshuaiXue,  Jincheng Zhang,  Yue Hao

18.  Large scaleproduction of graphene quantum dots through the reaction of graphene oxide withsodium hypochlorite
       RSC Advances,Vol.6,No.6,pp:54644-54648,2016.XuejiaoZhou,Shouwu Guo, Peng Zhong, Yong Xie,  
       
Zhimin Liand   XiaohuaMa

19. Role of theelectronic structure in the morphotropic phase boundary of TbxDy1-xCo2 studiedby first-principle
     calculation
      Journal of Alloysand Compounds,Vol.689,pp:1083-1087,2016.ZhangDongyan, Ma Xiaohua, Yang Sen,
      Song Xiaoping

20. Spatialdistribution of crystalline quality in N-type GaN grown on patterned sapphiresubstrate
      Optical Materials Express,Vol.6,No.6,pp:1817-1826,2016.TengJiang,  Shengrui Xu, Jincheng Zhang, Peixian Li,
       
Jun Huang, Zeyang Ren,  Mengdi Fu, Jiaduo Zhu,  Hengsheng Shan,  YingZhao,  and Yue Hao

21. A densityfunctional study on properties of a Cu3Zn material and CO adsorption onto itssurfaces
      Applied Surface Science,Vol.363,pp:128-139,2016.TangQian-Lin, Duan Xiao-Xuan, Liu Bei, Wei An-Qing,
       Liu Sheng-Long,
Wang Qi, LiangYan-Ping, Ma Xiao-Hua

22.
Impactsof annealing conditions on the flat band voltage of alternate La2O3/Al2O3multilayer stack structures
       Nanoscale Research Letters,Vol.11,pp:394-394,2016.Feng, Xingyao,Liu, Hongxia,

23. Simulationinvestigation of multiple domain observed in In0.23Ga0.77As planar Gunn diode
      International Journal of Hydrogen Energy,Vol.41,pp:15772-15776,2016.Li  Bin,Liu Hongxia

24. GeSn QuantumWell P-Channel Tunneling FETs Fabricated on Si(001) and (111) with improvedsubthreshold swing
      IEEE Electron Device Letters,Vol.37,No.6,pp:701 - 704,2016.GenquanHan, Yibo Wang, Yan Liu, Chunfu Zhang,
     
Qian Feng, Mingshan Liu,  Shenglei Zhao,  Buwen Cheng,  JinchengZhang, Yue Hao

25. Dissolvable andbiodegradable resistive switching memory based on magnesium
      IEEE Electron Device Letters,Vol.37,No.8,pp:990-993,2016.ShiweiWu,  Hong Wang,Jing Sun,  Fang Song,
      Zhan Wang,
MeiYang,  He Xi,  Yong Xie,  Haixia Gao,  Jigang Ma, Xiaohua Ma,Yue Hao

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