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西安电子科技大学微电子学院
中科院半导体所
中科院微电子所
北京大学微电子院
清华大学信息科学技术学院
中科院上海微系统与信息所
西安中为光电科技公司
 
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科研论文(杂志和国际会议)-2014年
  审核人:

1.Combined effects of hydrogen annealing on morphological, electrical and structural properties of

   graphene/r-sapphire

  Carbon, Vol.75, pp:262-270, Aug. 2014. Ning Jing, Wang Dong, Yan Jingdong, Han Dang, Chai Zheng, Cai Weiwei,

  Zhang Jincheng, Hao Yue.

2.Improvement of transparent silver thin film anodes for organic solar cells with a decreased percolation threshold

   of silver.

   Solar Energy Materials and Solar Cells,Vol.127,pp:193-200,Aug.2014. Wang Zhizhe, Zhang Chunfu, Gao Rui,

   Chen Dazheng, Tang Shi, Zhang Jincheng, Wang Dong, Lu Xiaoli, Hao Yue.

3.High efficient ITO free inverted organic solar cells based on ultrathin Ca modified AZO cathode and their

  light soakingissue,

  Organic Electronics,Vol.15, No.11, pp:3006-3015, Nov. 2014. Chen Dazheng, Zhang Chunfu, Wang Zhizhe,

 Zhang Jincheng, Tang Shi, Wei Wei, Sun Li, Hao Yue.

4.Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors.

  Applied Physics Letters, Vol.104, No.9, pp:093504 Mar. 2014. Ma Xiaohua, Chen Weiwei, Hou Bin, Zhang Kai,

  Zhu Jiejie, Zhang Jincheng, Zheng Xuefeng, Hao Yue.

5.Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional

  materials byvacancy defects.

  Applied Physics Letters,Vol.104, No.2, pp:023512, Jan.2014. Jiang Xiangwei, Gong Jian, Xu Nuo, Li Shushen,

  ZhangJinfeng, Hao Yue, Wang Linwang.

6.Study of surface leakage current of AlGaN/GaN high electron mobility transistors.

  Applied Physics Letters,Vol.104, No15,pp:153509, Apr.2014. Chen Yonghe, Zhang Kai, Cao Mengyi ,

  Zhao Shenglei,Zhang Jincheng, Ma Xiaohua, Hao Yue.

7.Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor

  high-electron-mobility transistors.

  Applied Physics Letters,Vol.104, No15, pp:153510, Apr.14 2014. Zhu Jiejie, Ma Xiaohua, Hou Bin,

  Chen Weiwei,Hao Yue.

8.Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-

  temperature aqueous solution processed zinc oxide electron extraction layer.

  Applied Physics Letters,Vol.104, No.24, pp:243301, Jun.16 2014. Chen Dazheng, Zhang Chunfu, Wang Zhizhe,

  Zhang Jincheng, Tang Shi, Wei Wei, Sun Li, Hao Yue.

9.Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown

  by metal-organic chemical vapor deposition.

 Applied Physics Letters,Vol.105, No.8, pp:082114, Aug.25 2014. Lin Zhiyu, Zhang Jincheng, Xu Shengrui,

 Chen Zhibin, Yang Shuyong, Tian Kun, Su Xujun, Shi Xuefang, Hao Yue.

10.Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors

    under reverse-bias stress.

    Applied Physics Letters,Vol.105, No.17, pp:173507, Oct.2014. Chen Weiwei, Ma Xiaohua, Hou Bin, Zhu Jiejie,

    Chen Yonghe, Zheng Xuefeng, Zhang Jincheng, Hao Yue.

11.High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode

    (E-Mode) MOSFETand Depletion-Mode (D-Mode) HEMT.

     IEEE Electron Device Letters,Vol.35, No.1, pp:33-35, Jan. 2014. Xu Zhe, Wang Jinyan, Cai Yong, Liu Jingqian,

    Yang Zhen, Li Xiaoping, Wang Maojun, Yu Min, Xie Bing, Wu Wengang, Ma Xiaohua, Zhang Jincheng, Hao Yue.

12.Demonstration of normally-off recess-gated AlGaN/GaN MOSFET using GaN cap layer as recess mask.

    IEEE Electron Device Letters,Vol.35, No.12, pp:1197-1199, Dec.2014. Xu Zhe, Wang Jinyan, Jin Chuanyan,

   Yang Zhenchuan, Wang Maojun, Yu Ming, Xie Bing, Wu Wengang, Ma Xiaohua, Zhang Jincheng, Hao Yue.

13.Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10− 13 A mm Leakage Current and 1012 ON/OFF

    Current Ratio.

    IEEE Electron Device Letters,Vol.35, No.12, pp:1200-1202, Dec.2014. Xu Zhe, Wang Jinyan, Cai Yong,

    Liu Jingqian, Jin Chunyan, Yang Zhenchuan, Wang Maojun, Yu Min, Xie Bing, Wu Wengang, Ma Xiaohua,

    Zhang Jincheng, Hao Yue

14.Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission

    spectroscopy.

    Nanoscale Research Letters,Vol.9, No. 1, pp:470,Sep.2014. Sang Ling, Zhu Shengqing, Yang Shaoyan,

    Liu Guipeng, Li Huijie, Wei Hongyuan, Jiao Chunmei, Liu Shuman, Wang Zhanguo, Zhou Xiaowei, Mao Wei,

   Hao Yue, Shen Bo.

15.Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate.

   Journal of Alloys and Compounds, Vol.614, pp:360–36, Nov.2014. Xu Shengrui, Li Peixian, Zhang Jincheng,

   Jiang Teng, Lin Zhiyu, Hao Yue.

16.Enhancement-mode Al2O3/InAlN/AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor

   with enhanced breakdown voltage using fluoride-based plasma treatment.

  Applied Physics Express,Vol.7, No.7, pp:071002, Jul.2014. Zhao ShengLei, Xue JunShuai, Zhang Peng, Hou Bin,

  Luo Jun, Fan Xiaojiao, Zhang Jincheng, Ma Xiaohua, Hao Yue.

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