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2018年刊物论文
作者:  文章来源:  发布时间:2019-03-01  阅读次数:490

1. Efficient Bifacial Semitransparent Perovskite Solar Cells Using Ag/V2O5 as Transparent Anodes. ACS APPLIED MATERIALS & INTERFACES. "2018.10.15(12731-12739)". Pang, Shangzheng; Li, Xueyi; Dong, Hang; Chen, Dazheng; Zhu, Weidong; Chang, Jingjing; Lin, Zhenhua; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

2. Biomass as a Template Leads to CdS@Carbon Aerogels for Efficient Photocatalytic Hydrogen Evolution and Stable Photoelectrochemical Cells. ACS SUSTAINABLE CHEMISTRY & ENGINEERING. "2018.6.11(14911-14918)". Quan, Fengyu; Zhang, Junlu; Li, Daohao; Zhu, Yukun; Wang, Yu; Bu, Yuyu; Qjn, Yimin; Xia, Yanzhi; Komarneni, Sridhar; Yang, Dongjiang

3. Sulfur- and Carbon-Codoped Carbon Nitride for Photocatalytic Hydrogen Evolution Performance Improvement. ACS SUSTAINABLE CHEMISTRY & ENGINEERING. "2018.6.6(7346-7354)". Tian, Huiwen; Zhang, Xiaoying; Bu, Yuyu

4. High-Performance Planar Perovskite Solar Cells Using Low Temperature, Solution-Combustion-Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%. ADVANCED ENERGY MATERIALS. "2018.8.19". Liu, Ziye; Chang, Jingjing; Lin, Zhenhua; Zhou, Long; Yang, Zhou; Chen, Dazheng; Zhang, Chunfu; Liu, Shengzhong (Frank); Hao, Yue

5. Intermolecular Exchange Boosts Efficiency of Air-Stable, Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%. ADVANCED ENERGY MATERIALS. "2018.8.30". Zhu, Weidong; Zhang, Qianni; Chen, Dazheng; Zhang, Zeyang; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

6. Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique. ADVANCED MATERIALS INTERFACES. "2018.5.21". Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang

7. Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes. APPLIED PHYSICS EXPRESS. "2018.11.10". Wang, Xiao; Bai, Lihua; Zhang, Heng; Su, Xi; Wu, Hao; Liu, Chang

8. InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance. APPLIED PHYSICS EXPRESS. "2018.11.9". Zhang, Yachao; Zhang, Tao; Zhou, Hong; Li, Yao; Xu, Shengrui; Bao, Weimin; Zhang, Jincheng; Ha, Yue

9. Performance improvement after nitridation treatment in HfO2-based resistance random-access memory. APPLIED PHYSICS EXPRESS. "2018.11.8". Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.

10. Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation. APPLIED PHYSICS LETTERS. "2018.112.23". Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

11. Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. APPLIED PHYSICS LETTERS. "2018.113.5". Tseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.

12. Temperature dependent electrical properties of pulse laser deposited Au/Ni/beta-(AlGa)(2)O-3 Schottky diode. APPLIED PHYSICS LETTERS. "2018.112.7". Feng, Qian; Feng, Zhaoqing; Hu, Zhuangzhuang; Xing, Xiangyu; Yan, Guangshuo; Zhang, Jincheng; Xu, Yongkuan; Lian, Xiaozheng; Hao, Yue

13. Band alignment of SiO2/(AlxGa1-x)(2)O-3 (0 <= x <= 0.49) determined by X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE. "2018.434.(440-444)". Feng, Zhaoqing; Feng, Qian; Zhang, Jincheng; Li, Xiang; Li, Fuguo; Huang, Lu; Chen, Hong-Yan; Lu, Hong-Liang; Hao, Yue

14. Energy-band alignment of (HfO2)(x)(Al2O3)(1-x) gate dielectrics deposited by atomic layer deposition on beta-Ga2O3 (-201). APPLIED SURFACE SCIENCE. "2018.433.(530-534)". Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

15. Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate. APPLIED SURFACE SCIENCE. "2018.444.(474-479)". Liu, Chen; Lu, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

16. III-Nitride Polymorphs: XN (X=Al, Ga, In) in the Pnma Phase. CHEMISTRY-A EUROPEAN JOURNAL. "2018.24.65(17280-17287)". Fan, Qingyang; Zhang, Wenzhu; Yun, Sining; Xu, Jie; Song, Yanxing

17. Enhanced visible-light-driven photocatalytic activities of 0D/1D heterojunction carbon quantum dot modified CdS nanowires. CHINESE JOURNAL OF CATALYSIS. "2018.39.4(841-848)". Chen, Zhiwei; Feng, Chang; Li, Weibing; Sun, Zhiyong; Hou, Jian; Li, Xiangbo; Xu, Likun; Sun, Mingxian; Bu, Yuyu

18. A non-equilibrium Ti4+ doping strategy for an efficient hematite electron transport layer in perovskite solar cells. DALTON TRANSACTIONS. "2018.47.18(6404-6411)". Zhu, Weidong; Zhang, Qianni; Zhang, Chunfu; Chen, Dazheng; Zhou, Long; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Hao, Yue

19. Improving Semantic Image Segmentation With a Probabilistic Superpixel-Based Dense Conditional Random Field. IEEE ACCESS. "2018.6.(15297-15310)". Zhang, Liang; Li, Huan; Shen, Peiyi; Zhu, Guangming; song, Juan; Shah, Syed Afaq Ali; Bennamoun, Mohammed; Zhang, Li

20. 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique. IEEE ELECTRON DEVICE LETTERS. "2018.39.3(397-400)". Hou, Bin; Ma, Xiaohua; Zhu, Jiejie; Yang, Ling; Chen, Weiwei; Mi, Minhan; Zhu, Qing; Chen, Lixiang; Zhang, Rong; Zhang, Meng; Zhou, Xiaowei; Hao, Yue

21. A 1.9-kV/2.6 m Omega.cm(2) Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V. IEEE ELECTRON DEVICE LETTERS. "2018.39.10(1548-1551)". Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Chen, Tangsheng; Zhang, Kai; Hu, Zhuangzhuang; Bian, Zhaoke; Dang, Kui; Wang, Yi; Zhang, Li; Ning, Jing; Ma, Peijun; Hao, Yue

22. Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage. IEEE ELECTRON DEVICE LETTERS. "2018.39.9(1370-1372)". Zhang, Weihang; Zhang, Jincheng; Xiao, Ming; Zhang, Li; Hao, Yue

23. AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4-7-V Threshold Voltage and 1.3-kV Breakdown Voltage. IEEE ELECTRON DEVICE LETTERS. "2018.39.7(1026-1029)". Zhang, Li; Zhou, Hong; Zhang, Weihang; Dang, Kui; Zhang, Tao; Ma, Peijun; Ma, Xiaohua; Zhang, Jincheng

24. Effects of the Variation of V-GS Sweep Range on the Performance of Negative Capacitance FETs. IEEE ELECTRON DEVICE LETTERS. "2018.39.4(618-621)". Zhou, Jiuren; Han, Genquan; Li, Jing; Liu, Yan; Peng, Yue; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

25. Enhancement-Mode AlN/GaN HEMTs With High I-on/I-off and Low-Leakage-Current Fabricated With Low-Power Surface Oxidation Treatment. IEEE ELECTRON DEVICE LETTERS. "2018.39.5(719-722)". Xiao, Ming; Duan, Xiaoling; Zhang, Jincheng; Hao, Yue

26. Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance. IEEE ELECTRON DEVICE LETTERS. "2018.39.1(79-82)". Zhu, Jiejie; Chen, Lixiang; Jiang, Jie; Lu, Xiaoli; Yang, Ling; Hou, Bin; Liao, Min; Zhou, Yichun; Ma, Xiaohua; Hao, Yue

27. Field-Plated Lateral beta-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm(2). IEEE ELECTRON DEVICE LETTERS. "2018.39.10(1564-1567)". Hu, Zhuangzhuang; Zhou, Hong; Feng, Qian; Zhang, Jincheng; Zhang, Chunfu; Dang, Kui; Cai, Yuncong; Feng, Zhaoqing; Gao, Yangyang; Kang, Xuanwu; Hao, Yue

28. High Performance Al0.10Ga0.90N Channel HEMTs. IEEE ELECTRON DEVICE LETTERS. "2018.39.8(1149-1151)". Xiao, Ming; Zhang, Jincheng; Duan, Xiaoling; Zhang, Weihang; Shan, Hengsheng; Ning, Jing; Hao, Yue

29. High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology. IEEE ELECTRON DEVICE LETTERS. "2018.39.6(811-814)". Lu, Yang; Ma, Xiaohua; Yang, Ling; Hou, Bin; Mi, Minhan; Zhang, Meng; Zheng, Jiaxin; Zhang, Hengshuang; Hao, Yue

30. High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment. IEEE ELECTRON DEVICE LETTERS. "2018.39.10(1544-1547)". Yang, Ling; Hou, Bin; Mi, Minhan; Zhu, Qing; Wu, Mei; Zhu, Jiejie; Lu, Yang; Zhang, Meng; Chen, Lixiang; Zhou, Xiaowei; Lv, Ling; Ma, Xiaohua; Hao, Yue

31. Integration and Electrical Properties of Ferroelectric Hf0.5Zr0.5O2 Thin Film on Bulk beta-Ga2O3(-201) Substrate for Memory Applications. IEEE ELECTRON DEVICE LETTERS. "2018.39.10(1504-1507)". Xiao, Wenwu; Peng, Yue; Zheng, Shuaizhi; Feng, Qian; Zhou, Hong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue; Liao, Min; Zhou, Yichun

32. Negative Differential Resistance in Negative Capacitance FETs. IEEE ELECTRON DEVICE LETTERS. "2018.39.4(622-625)". Zhou, Jiuren; Han, Genquan; Li, Jing; Liu, Yan; Peng, Yue; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

33. Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate. IEEE ELECTRON DEVICE LETTERS. "2018.39.4(614-617)". Wu, Jibao; Kanyang, Ruoying; Han, Genquan; Zhou, Jiuren; Liu, Yan; Wang, Yibo; Peng, Yue; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

34. Novel LDMOS Optimizing Lateral and Vertical Electric Field to Improve Breakdown Voltage by Multi-Ring Technology. IEEE ELECTRON DEVICE LETTERS. "2018.39.9(1358-1361)". Dong, Ziming; Duan, Baoxing; Fu, Chao; Guo, Haijun; Cao, Zhen; Yang, Yintang

35. Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs. IEEE ELECTRON DEVICE LETTERS. "2018.39.3(444-447)". Wang, Hongjuan; Jiang, Xiangwei; Xu, Nuo; Han, Genquan; Hao, Yue; Li, Shu-Shen; Esseni, David

36. ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein. IEEE ELECTRON DEVICE LETTERS. "2018.39.1(31-34)". Song, Fang; Wang, Hong; Sun, Jing; Gao, Haixia; Wu, Shiwei; Yang, Mei; Ma, Xiaohua; Hao, Yue

37. Device Simulation of Organic-Inorganic Halide Perovskite/Crystalline Silicon Four-Terminal Tandem Solar Cell With Various Antireflection Materials. IEEE JOURNAL OF PHOTOVOLTAICS. "2018.8.6(1685-1691)". Zhao, Peng; Yue, Man; Lei, Chen; Lin, Zhenhua; Su, Jie; Chen, Dazheng; Zhang, Chunfu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue

38. 0.36BiScO(3)-0.64PbTiO(3)/Epoxy 1-3 Composite for Ultrasonic Transducer Applications. IEEE SENSORS JOURNAL. "2018.18.14(5685-5690)". Lin, Pengfei; Fei, Chunlong; Hou, Shang; Zhao, Tianlong; Chen, Qiang; Quan, Yi; Shung, K. Kirk; Zhou, Qifa

39. A 10-Bit Self-Clocked SAR ADC With Enhanced Energy Efficiency for Multi-Sensor Applications. IEEE SENSORS JOURNAL. "2018.18.10(4223-4233)". Liu, Shubin; Shen, Yi; Wang, Jingyu; Zhu, Zhangming

40. A 64.8 mu W > 2.2 G Omega DC-AC Configurable CMOS Front-End IC for Wearable ECG Monitoring. IEEE SENSORS JOURNAL. "2018.18.8(3400-3409)". Bai, Wenbin; Zhu, Zhangming; Li, Yani; Liu, Lianxi

41. A 9.1ENOB 200MS/s Asynchronous SAR ADC With Hybrid Single-Ended/Differential DAC in 55-nm CMOS for Image Sensing Signals. IEEE SENSORS JOURNAL. "2018.18.17(7130-7140)". Liang, Yuhua; Ding, Ruixue; Zhu, Zhangming

42. High Sensitivity and Wide Dynamic Range Analog Front-End Circuits for Pulsed TOF 4-D Imaging LADAR Receiver. IEEE SENSORS JOURNAL. "2018.18.8(3114-3124)". Zheng, Hao; Ma, Rui; Liu, Maliang; Zhu, Zhangming

43. A Linear Dynamic Range Receiver With Timing Discrimination for Pulsed TOF Imaging LADAR Application. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. "2018.67.11(2684-2691)". Zheng, Hao; Ma, Rui; Liu, Maliang; Zhu, Zhangming

44. A 5-GHz Low-Power Low-Noise Integer-N Digital Subsampling PLL With SAR ADC PD. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. "2018.66.9(4078-4087)". Liu, Maliang; Ma, Rui; Liu, Shubin; Ding, Zhen; Zhang, Pan; Zhu, Zhangming

45. TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. "2018.65.8(2250-2259)". Wang, Qianqiong; Liu, Hongxia; Wang, Shulong; Chen, Shupeng

46. Impact of High-Temperature Storage Stressing (HTSS) on Degradation of High-Voltage 4H-SiC Junction Barrier Schottky Diodes. IEEE TRANSACTIONS ON POWER ELECTRONICS. "2018.33.3(1874-1877)". Yang, Shuai; Zhang, Yuming; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Yuan, Lei; Zhang, Yimen

47. A new tetragonal superhard metallic carbon allotrope.JOURNAL OF ALLOYS AND COMPOUNDS. "2018.769.(347-352)". Wei, Qun; Zhang, Quan; Yan, Haiyan; Zhang, Meiguang; Wei, Bing

48. Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)(2)O-3 film (0 <= x <= 0.53) grown on Ga2O3 buffer layer on sapphire. JOURNAL OF ALLOYS AND COMPOUNDS. "2018.745.(292-298)". Feng, Zhaoqing; Feng, Qian; Zhang, Jincheng; Zhang, Chunfu; Zhou, Hong; Li, Xiang; Huang, Lu; Xu, Lei; Hu, Yuan; Zhao, Shengjie; Hao, Yue

49. Novel 3D porous graphene/Ni3S2 nanostructures for high-performance supercapacitor electrodes. JOURNAL OF ALLOYS AND COMPOUNDS. "2018.731.(1063-1068)". Wu, Peng; Wang, Dong; Ning, Jing; Zhang, Jincheng; Feng, Xin; Dong, Jianguo; Hao, Yue

50. Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS. "2018.731.(1267-1274)". Zhang, Yimeng; Guo, Tao; Tang, Xiaoyan; Yang, Jie; He, Yanjing; Zhang, Yuming

51. Fabrication of FTO-BiVO4-W-WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism. JOURNAL OF MATERIALS CHEMISTRY A. "2018.6.27(12956-12961)". Wang, Ruiling; Xie, Tian; Zhang, Tong; Pu, Taofei; Bu, Yuyu; Ao, Jin-Ping

52. Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode. JOURNAL OF MATERIALS CHEMISTRY A. "2018.6.18(8604-8611)". Bu, Yuyu; Ren, Jun; Zhang, Huawei; Yang, Dongjiang; Chen, Zhuoyuan; Ao, Jin-Ping

53. Room temperature ferroelectricity of hybrid organic-inorganic perovskites with mixed iodine and bromine. JOURNAL OF MATERIALS CHEMISTRY A. "2018.6.20(9665-9676)". Xiao, Juanxiu; Chang, Jingjing; Li, Bichen; Isikgor, Furkan Halis; Wang, Dong; Fan, Zhen; Lin, Zhenhua; Ouyang, Jianyong; Zeng, Kaiyang; Chen, Jingsheng

54. Simultaneouly enhanced durability and performance by employing dopamine copolymerized PEDOT with high work function and water-proofness for inverted perovskite solar cells. JOURNAL OF MATERIALS CHEMISTRY C. "2018.6.9(2311-2318)". Huang, Ju; Wang, Chunhua; Liu, Ziye; Qiu, Xueqing; Yang, Junliang; Chang, Jingjing

55. Theoretical and Experimental Investigation of Mixed Pb-In Halide Perovskites. JOURNAL OF PHYSICAL CHEMISTRY C. "2018.122.28(15945-15953)". Zhou, Long; Su, Jie; Lin, Zhenhua; Chen, Dazheng; Zhu, Weidong; Zhang, Chunfu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue

56. Unusual Electronic and Optical Properties of Two-Dimensional Ga2O3 Predicted by Density Functional Theory. JOURNAL OF PHYSICAL CHEMISTRY C. "2018.122.43(24592-24599)". Su, Jie; Guo, Rui; Lin, Zhenhua; Zhang, Siyu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue

57. Enhanced bending-tuned magnetic properties in epitaxial cobalt ferrite nanopillar arrays on flexible substrates. MATERIALS HORIZONS. "2018.5.2(230-239)".Shen, Lvkang; Liu, Ming; Ma, Chunrui; Lu, Lu; Fu, Huarui; You, Caiyin; Lu, Xiaoli; Jia, Chun-Lin

58. AlN piezoelectric thin films for energy harvesting and acoustic devices. NANO ENERGY. "2018.51.(146-161)". Fei, Chunlong; Liu, Xiangli; Zhu, Benpeng; Li, Di; Yang, Xiaofei; Yang, Yintang; Zhou, Qifa

59. One-step synthesis of novel snowflake-like Si-O/Si-C nanostructures on 3D graphene/Cu foam by chemical vapor deposition. NANO RESEARCH. "2018.11.4(1861-1872)". Ning, Jing; Wang, Dong; Zhang, Jincheng; Feng, Xin; Zhong, Ruixia; Chen, Jiabo; Dong, Jianguo; Guo, Lixin; Hao, Yue

60. Improving Electron Extraction Ability and Device Stability of Perovskite Solar Cells Using a Compatible PCBM/AZO Electron Transporting Bilayer. NANOMATERIALS. "2018.8.9". Dong, Hang; Pang, Shangzheng; Zhang, Yi; Chen, Dazheng; Zhu, Weidong; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

61. Enhanced planar perovskite solar cell efficiency and stability using a perovskite/PCBM heterojunction formed in one step. NANOSCALE. "2018.10.6(3053-3059)". Zhou, Long; Chang, Jingjing; Liu, Ziye; Sun, Xu; Lin, Zhenhua; Chen, Dazheng; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

62. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor. NANOSCALE RESEARCH LETTERS. "2018.13.". Chen, Shupeng; Liu, Hongxia; Wang, Shulong; Li, Wei; Wang, Xing; Zhao, Lu

63. Reduced Contact Resistance Between Meta and n-Ge by Insertion of ZnO with Argon Plasma Treatment. NANOSCALE RESEARCH LETTERS. "2018.13.". Zhang, Yi; Han, Genquan; Wu, Hao; Wang, Xiao; Liu, Yan; Zhang, Jincheng; Liu, Huan; Zheng, Haihua; Chen, Xue; Liu, Chang; Hao, Yue

64. The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor. NANOSCALE RESEARCH LETTERS. "2018.13.". Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

65. A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers. OPTICS AND LASERS IN ENGINEERING. "2018.102.(170-180)". Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun

66. Localized plasmon resonances for black phosphorus bowtie nanoantennas at terahertz frequencies. OPTICS EXPRESS. "2018.26.21(27683-27693)". Fang, Cizhe; Liu, Yan; Han, Genquan; Shao, Yao; Zhang, Jincheng; Hao, Yue

67. Interface engineering of TiO2/perovskite interface via fullerene derivatives for high performance planar perovskite solar cells. ORGANIC ELECTRONICS. "2018.62.(459-467)". Guo, Xing; Zhang, Bingjuan; Lin, Zhenhua; Ma, Jing; Su, Jie; Zhu, Weidong; Zhang, Chunfu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue

68. Solution-processed high performance organic thin film transistors enabled by roll-to-roll slot die coating technique. ORGANIC ELECTRONICS. "2018.54.(80-88)". Lin, Zhenhua; Guo, Xing; Zhou, Long; Zhang, Chunfu; Chang, Jingjing; Wu, Jishan; Zhang, Jie

69. Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. "2018.12.3". Li, Yao; Zhang, Jin-Feng; Liu, Gui-Peng; Ren, Ze-Yang; Zhang, Jin-Cheng; Hao, Yue

70. A first-principles study of hydrogen storage capacity based on Li-Na-decorated silicene. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. "2018.20.20(13903-13908)". Sheng, Zhe; Wu, Shujing; Dai, Xianying; Zhao, Tianlong; Hao, Yue

71. Enhanced Performance of Inverted Non-Fullerene Organic Solar Cells by Using Metal Oxide Electron- and Hole-Selective Layers with Process Temperature <= 150 degrees C. POLYMERS. "2018.10.7". You, Hailong; Dai, Lin; Zhang, Qianni; Chen, Dazheng; Jiang, Qubo; Zhang, Chunfu

72. Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution. POLYMERS. "2018.10.2". Zhang, Qianni; Peng, Ruizhi; Zhang, Chunfu; Chen, Dazheng; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Hao, Yue

73. Passivating ZnO Surface States by C60 Pyrrolidine Tris-Acid for Hybrid Solar Cells Based on Poly(3-hexylthiophene)/ZnO Nanorod Arrays. POLYMERS. "2018.10.1". Zhong, Peng; Ma, Xiaohua; Xi, He

74. Polarization-resolved and polarization-multiplexed spike encoding properties in photonic neuron based on VCSEL-SA. SCIENTIFIC REPORTS. "2018.8.". Zhang, Yahui; Xiang, Shuiying; Guo, Xingxing; Wen, Aijun; Hao, Yue

75. Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application. SMALL. "2018.14.27". Sun, Jing; Wang, Hong; Song, Fang; Wang, Zhan; Dang, Bingjie; Yang, Mei; Gao, Haixia; Ma, Xiaohua; Hao, Yue

76. Device simulation of inverted CH3NH3PbI3-xClx perovskite solar cells based on PCBM electron transport layer and NiO hole transport layer. SOLAR ENERGY. "2018.169.(11-18)". Zhao, Peng; Liu, Ziye; Lin, Zhenhua; Chen, Dazheng; Su, Jie; Zhang, Chunfu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue

77. First principles investigations of the structural, electrical and optical properties of iron-doped zinc oxide (0001) surfaces. COMPUTATIONAL MATERIALS SCIENCE. "2018.154.(435-441)". Cheng, Jingsi; Wang, Ping; Hua, Chao; Yang, Yintang; Zhang, Zhiyong

78. Growth of Metal Halide Perovskite, from Nanocrystal to Micron-Scale Crystal: A Review. CRYSTALS. "2018.8.5". Ma, Haijiao Harsan; Imran, Muhammad; Dang, Zhiya; Hu, Zhaosheng

79. Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures. CRYSTALS. "2018.8.5". Gu, Wenping; Xu, Xiaobo; Zhang, Lin; Gao, Zhiyuan; Hu, Xiaochuan; Zhang, Zan

80. Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation. DIAMOND AND RELATED MATERIALS. "2018.88.(256-261)". Liu, L. Y.; Shen, T. L.; Liu, A.; Zhang, T.; Bai, S.; Xu, S. R.; Jin, P.; Hao, Y.; Ouyang, X. P.

81. Effect of ITO Film on InGaN/GaN MQWs Solar Cell under Low Total-Dose Gamma-Ray Radiation. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. "2018.7.2(P82-P86)". Shan, Hengsheng; Li, Xiaoya; Lin, Zhiyu; Lv, Ling; Xiao, Ming; Chen, Bin; Bi, Zhen; Du, Jinjuan; Peng, Ruoshi; Xu, Shengrui; Zhang, Jincheng; Hao, Yue

82. Efficient Low-Cost IBC Solar Cells with a Front Floating Emitter: Structure Optimization and Passivation Layer Study. ENERGIES. "2018.11.4". Dong, Peng; Zhang, Yuming; Guo, Hui; Zhang, Chenxu; Ma, Jikui; Qu, Xiaoyong; Zhang, Chunfu

83. Efficient Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 13.31% Achieved by Controlling the SiOx Interlayer. ENERGIES. "2018.11.6". Zhang, Chenxu; Zhang, Yuming; Guo, Hui; Jiang, Qubo; Dong, Peng; Zhang, Chunfu

84. A novel hybrid sp-sp (2) metallic carbon allotrope. FRONTIERS OF PHYSICS. "2018.13.5". Wei, Qun; Zhang, Quan; Zhang, Mei-Guang; Yan, Hai-Yan; Guo, Li-Xin; Wei, Bing

85. Information-Theory-Based Complexity Quantifier for Chaotic Semiconductor Laser With Double Time Delays. IEEE JOURNAL OF QUANTUM ELECTRONICS. "2018.54.1". Guo, Xing Xing; Xiang, Shui Ying; Zhang, Ya Hui; Wen, Ai Jun; Hao, Yue

86. Numerical Implementation of Wavelength-Dependent Photonic Spike Timing Dependent Plasticity Based on VCSOA. IEEE JOURNAL OF QUANTUM ELECTRONICS. "2018.54.6". Xiang, Shuiying; Gong, Junkai; Zhang, Yahui; Guo, Xingxing; Han, Yanan; Wen, Aijun; Hao, Yue

87. Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. "2018.6.1(233-239)". Peng, Yue; Han, Genquan; Chen, Zhibin; Li, Qinglong; Zhang, Jincheng; Hao, Yue

88. High Breakdown-Voltage (> 2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. "2018.6.1(931-935)". Zhang, Weihang; Zhang, Jincheng; Xiao, Ming; Zhang, Li; Hao, Yue

89. Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.  "2018.6.1(41-48)". Zhou, Jiuren; Peng, Yue; Han, Genquan; Li, Qinglong; Liu, Yan; Zhang, Jincheng; Liao, Min; Sun, Qing-Qing; Zhang, David Wei; Zhou, Yichun; Hao, Yue

90. Lateral beta-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. "2018.6.1(815-820)". Hu, Zhuangzhuang; Zhou, Hong; Dang, Kui; Cai, Yuncong; Feng, Zhaoqing; Gao, Yangyang; Feng, Qian; Zhang, Jincheng; Hao, Yue

91. A 140-220-GHz Balanced Doubler With 8.7%-12.7% Efficiency. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.6(515-517)". Deng, Jianqin; Yang, Yintang; Zhu, Zhangming; Luo, Xun

92. A High-Resolution 2-GHz Fractional-N PLL With Crystal Oscillator PVT-Insensitive Feedback Control. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.3(227-229)". Huang, Sheng; Liu, Shubin; Zhu, Zhangming

93. Accurate Inductance Modeling of 3-D Inductor Based on TSV. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.10(900-902)". Gou, Shilong; Dong, Gang; Mei, Zheng; Yang, Yintang

94. Inductance Modeling of Interconnections in 3-D Stacked-Chip Packaging. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.4(281-283)". Qu, Chenbing; Liu, Yang; Liu, Xiaoxian; Zhu, Zhangming

95. Low-Noise Fractional-N PLL With a High-Precision Phase Control in the Phase Synchronization of Multichips. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.8(702-704)". Huang, Sheng; Liu, Shubin; Liu, Maliang; Hu, Jin; Zhu, Zhangming

96. Wideband Fourth-Harmonic Mixer Operated at 325-500 GHz. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. "2018.28.3(242-244)". Deng, Jianqin; Lu, Qijun; Jia, Dinghong; Yang, Yingtang; Zhu, Zhangming

97. Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection. IEEE PHOTONICS JOURNAL. "2018.10.6". Fang, Cizhe; Liu, Yan; Wang, Yibo; Wu, Jibao; Han, Genquan; Shao, Yao; Zhang, Jincheng; Hao, Yue

98. Simulation Study Toward High-Performance Transparent-Conductive-Oxide Free Perovskite Solar Cells Using Metal Microcavity and Optical Coupling Layer. IEEE PHOTONICS JOURNAL. "2018.10.2". Chen, Dazheng; Xi, He; Zhang, Chunfu; Chang, Jingjing; Lin, Zhenhua; Zhu, Weidong; Pang, Shangzheng; Yang, Haifeng; Zhang, Jincheng; Guo, Lixin; Hao, Yue

99. Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si3N4 Liner Stressor. IEEE PHOTONICS JOURNAL. "2018.10.1". Liu, Yan; Fang, Cizhe; Gao, Xi; Han, Genquan; Zhang, Qingfang; Shao, Yao; Zhang, Jincheng; Hao, Yue

100. An InGaN/GaN MQWs Solar Cell Improved By a Surficial GaN Nanostructure as Light Traps. IEEE PHOTONICS TECHNOLOGY LETTERS. "2018.30.1(83-86)". Bi, Zhen; Bacon-Brown, Daniel; Du, Fengyu; Zhang, Jinfeng; Xu, Shengrui; Li, Peixian; Zhang, Jincheng; Zhan, Yiping; Hao, Yue

101. A 1.4-mW 10-Bit 150-MS/s SAR ADC With Nonbinary Split Capacitive DAC in 65-nm CMOS. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. "2018.65.11(1524-1528)". Li, Dengquan; Zhu, Zhangming; Ding, Ruixue; Yang, Yintang

102. A 77-dB Dynamic Range Low-Power Variable-Gain Transimpedance Amplifier for Linear LADAR. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. "2018.65.2(171-175)". Ma, Rui; Liu, Maliang; Zheng, Hao; Zhu, Zhangming

103. A 0.55-V, 28-ppm/degrees C, 83-nW CMOS Sub-BGR With UltraLow Power Curvature Compensation. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. "2018.65.1(95-106)". Liu, Lianxi; Mu, Junchao; Zhu, Zhangming

104. A 12 mV Input, 90.8% Peak Efficiency CRM Boost Converter With a Sub-Threshold Startup Voltage for TEG Energy Harvesting. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. "2018.65.8(2631-2640)". Mu, Junchao; Liu, Lianxi

105. A Reconfigurable 10-to-12-b 80-to-20-MS/s Bandwidth Scalable SAR ADC. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. "2018.65.1(51-60)". Shen, Yi; Zhu, Zhangming; Liu, Shubin; Yang, Yintang

106. Low-Power Single-Ended SAR ADC Using Symmetrical DAC Switching for Image Sensors With Passive CDS and PGA Technique. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. "2018.65.8(2378-2388)". Wang, Jingyu; Liu, Shubin; Shen, Yi; Zhu, Zhangming

107. A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.1(299-307)". Lu, Bin; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen; Cui, Xiaoran; Lv, Zhijun; Yang, Shizheng; Liu, Chen

108. A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.11(4988-4994)". Lyu, Zhijun; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen; Lu, Bin; Cui, Xiaoran; Zhao, Yingxiang

109. A High-Performance Gate Engineered InGaN Dopingless Tunnel FET. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.3(1223-1229)". Duan, Xiaoling; Zhang, Jincheng; Wang, Shulong; Li, Yao; Xu, Shengrui; Hao, Yue

110. Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.11(4792-4799)". Wu, Mei; Ma, Xiao-Hua; Yang, Ling; Zhu, Qing; Zhang, Meng; Yang, Lin-An; Hao, Yue

111. Effect of Hydrogen on Defects of AlGaN/GaN HEMTs Characterized by Low-Frequency Noise. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.4(1321-1326)". Chen, Y. Q.; Zhang, Y. C.; Liu, Y.; Liao, X. Y.; En, Y. F.; Fang, W. X.; Huang, Y.

112. Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.6(2552-2557)". Wang, Ying; Li, Zhi-Yuan; Hao, Yue; Luo, Xin; Fang, Jun-Peng; Ma, Ya-Chao; Yu, Cheng-hao; Cao, Fei

113. Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.8(3555-3561)". Lu, Bin; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen; Cui, Xiaoran; Lv, Zhijun; Liu, Chen

114. Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.9(3909-3914)". Liang, Yuhua; Li, Xueqing; George, Sumitha; Srinivasa, Srivatsa; Zhu, Zhangming; Gupta, Sumeet Kumar; Datta, Suman; Narayanan, Vijaykrishnan

115. Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.5(1745-1752)". Zhang, Meng; Ma, Xiao-Hua; Yang, Ling; Mi, Minhan; Hou, Bin; He, Yunlong; Wu, Sheng; Lu, Yang; Zhang, Heng-Shuang; Zhu, Qing; Yin, Jun; Wu, Jiafeng; Yang, Lin-An; Hao, Yue

116. Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.3(1217-1222)". Li, Jing; Zhou, Jiuren; Han, Genquan; Liu, Yan; Peng, Yue; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

117. Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.8(3388-3393)". Duan, Baoxing; Yang, Xin; Lv, Jianmei; Yang, Yintang

118. Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.8(3149-3155)". Chen, Lixiang; Ma, Xiaohua; Zhu, Jiejie; Hou, Bin; Song, Fang; Zhu, Qing; Zhang, Meng; Yang, Ling; Hao, Yue

119. TCAD Simulation of Breakdown-Enhanced AlGaN-/GaN-Based MISFET With Electrode-Connected p-i-n Diode in Buffer Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.2(476-482)". Luo, Xin; Wang, Ying; Hao, Yue; Cao, Fei; Yu, Cheng-Hao; Fei, Xin-Xing

120. Theory Analyses of SJ-LDMOS With Multiple Floating Buried Layers Based on Bulk Electric Field Modulation. IEEE TRANSACTIONS ON ELECTRON DEVICES. "2018.65.6(2565-2572)". Cao, Zhen; Duan, Baoxing; Shi, Tongtong; Dong, Ziming; Guo, Haijun; Yang, Yintang

121. Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures. JOURNAL OF APPLIED PHYSICS. "2018.123.4". Rong, Taotao; Yang, Lin-An; Yang, Lin; Hao, Yue

122. A 42 ppm/degrees C 0.7V 47 nW Low-Complexity All-MOSFET Sub-Threshold Voltage Reference. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS."2018.27.7". Liang, Yuhua; Zhu, Zhangming

123. A High Energy Efficiency and Low Common-Mode Voltage Variation Switching Scheme for SAR ADCs. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.1". Zhu, Donglin; Liu, Maliang; Zhu, Zhangming

124. Adaptive On-Time-Controlled PFM Boost Converter with a Below-Threshold Startup Voltage. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.8". Liu, Lianxi; Liao, Xufeng; Huang, Wenbin; Zhu, Zhangming; Yang, Yintang

125. An Energy-Efficient Switching Scheme for Low-Power SAR ADC Design. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.1". Liang, Yuhua; Zhu, Zhangming

126. Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.3". Wu, Yue; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Li, Shaojun

127. Analysis and Modeling of a SAR-VCO Hybrid ADC Architecture. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.3". Liang, Yuhua; Zhu, Zhangming

128. Energy-Efficient and Area-Saving Asymmetric Capacitor Switching Scheme for SAR ADCs. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. "2018.27.7". Liang, Hongzhi; Ding, Ruixue; Liu, Shubin; Zhu, Zhangming

129. HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions. JOURNAL OF COMPUTATIONAL ELECTRONICS. "2018.17.3(994-1000)". Yi, Tengyue; Liu, Yi; Wu, Zhenyu; Shen, Chen; Yang, Yintang

130. Power and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network. JOURNAL OF ELECTRONIC PACKAGING. "2018.140.4". Zhu, Weijun; Dong, Gang; Yang, Yintang

131. Alleviating hysteresis and improving efficiency of MA(1-y)FA(y)PbI(3-x)Br(x) perovskite solar cells by controlling the halide composition. JOURNAL OF MATERIALS SCIENCE. "2018.53.24(16500-16510)". Dong, Hang; Mo, Jiajie; Pang, Shangzheng; Chen, Dazheng; Zhu, Weidong; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

132. Magnetism investigation of GaN monolayer doped with group VIII B transition metals. JOURNAL OF MATERIALS SCIENCE. "2018.53.23(15986-15994)". Li, Jiabin; Liu, Hongxia

133. Theoretical investigations of Ge1-x Sn (x) alloys (x=0, 0.333, 0.667, 1) in P4(2)/ncm phase. JOURNAL OF MATERIALS SCIENCE. "2018.53.13(9611-9626)". Zhang, Wei; Chai, Changchun; Fan, Qingyang; Weng, Kaiqiang; Yang, Yintang

134. Theoretical investigations of group IV alloys in the Lonsdaleite phase. JOURNAL OF MATERIALS SCIENCE. "2018.53.4(2785-2801)". Fan, Qingyang; Chai, Changchun; Wei, Qun; Wong, Kaiqiang; Liu, Yuqian; Yang, Yintang

135. Comparative study on slow-state near interface hole traps in NO and Ar annealed N-type 4H-SiC MOS capacitors by ultraviolet light. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. "2018.29.16(14292-14299)". Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng

136. Efficient Semitransparent Perovskite Solar Cells Using a Transparent Silver Electrode and Four-Terminal Perovskite/Silicon Tandem Device Exploration. JOURNAL OF NANOMATERIALS. "2018..". Chen, Dazheng; Pang, Shangzheng; Zhu, Weidong; Zhang, Hongxiao; Zhou, Long; He, Fengqin; Chang, Jingjing; Lin, Zhenhua; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

137. Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies. JOURNAL OF PHYSICS D-APPLIED PHYSICS. "2018.51.3". Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

138. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors. JOURNAL OF PHYSICS D-APPLIED PHYSICS. "2018.51.7". Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

139. Annealing temperature-dependent electronic properties in hydrothermal TiO2 nanorod arrays. JOURNAL OF SOLID STATE ELECTROCHEMISTRY. "2018.22.2(567-580)". Zhong, Peng; Chen, Xinpeng; Jia, Qiaoying; Zhu, Gangqiang; Lei, Yimin; Xi, He; Xie, Yong; Zhou, Xuejiao; Ma, Xiaohua

140. Zero-lag intensity correlation properties in small ring laser network with heterogeneous delays. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS. "2018.35.2(287-294)". Xiang, Shuiying; Gong, Junkai; Zhang, Hao; Guo, Xingxing; Wang, Haoning; Zhang, Yahui; Wen, Aijun

141. Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors. MATERIALS. "2018.11.9". Wan, Liaojun; He, Fuchao; Qin, Yu; Lin, Zhenhua; Su, Jie; Chang, Jingjing; Hao, Yue

142. Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment. MATERIALS. "2018.11.9". Wang, Xing; Liu, Hongxia; Zhao, Lu; Wang, Yongte

143. Giant Zero-Drift Electronic Behaviors in Methylammonium Lead Halide Perovskite Diodes by Doping Iodine Ions. MATERIALS. "2018.11.9". Pang, Tiqiang; Jia, Renxu; Wang, Yucheng; Sun, Kai; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Zhang, Yuming

144. Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3-xN4. MATERIALS. "2018.11.3". Han, Chenxi; Chai, Changchun; Fan, Qingyang; Yang, Jionghao; Yang, Yintang

145. Structural, Mechanical, Anisotropic, and Thermal Properties of AlAs in oC12 and hP6 Phases under Pressure. MATERIALS. "2018.11.5". Zhang, Wei; Chai, Changchun; Song, Yanxing; Fan, Qingyang; Yang, Yintang

146. The Impact of Iron Adsorption on the Electronic and Photocatalytic Properties of the Zinc Oxide (0001) Surface: A First-Principles Study. MATERIALS. "2018.11.3". Cheng, Jingsi; Wang, Ping; Hua, Chao; Yang, Yintang; Zhang, Zhiyong

147. Determination of N-polar AlN/GaN heterojunction valance-band offsets by X-ray photoelectron spectroscopy. MATERIALS LETTERS. "2018.230.(135-138)". Du, Jin-Juan; Xu, Sheng-Rui; Zhang, Jin-Cheng; Li, Pei-Xian; Lin, Zhi-Yu; Zhao, Ying; Peng, Ruo-Shi; Fan, Xiao-Meng; Tao, Hong-Chang; Hao, Yue

148. Influence of [6,6]-Phenyl-C61-butyric Acid Methyl Ester doping on Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors. MATERIALS LETTERS. "2018.217.(139-142)". Luan, Suzhen; Liu, Yintao; Wang, Yucheng; Jia, Renxu

149. Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition. MATERIALS RESEARCH BULLETIN. "2018.105.(368-371)". Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Bao, Weimin; Zhang, Tao; Huang, Jun; Zhang, Jincheng; Hao, Yue

150. Strain effects on the modulation of band gap and optical properties of direct band gap silicon. MATERIALS RESEARCH BULLETIN. "2018.102.(1-7)". Wei, Qun; Zhang, Quan; Yan, Haiyan; Zhang, Meiguang; Zhang, Junqin

151. Novel power U-MOSFET with SIPOS pillars. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. "2018.87.(86-91)". Cao, Zhen; Duan, Baoxing; Guo, Haijun; Song, Haitao; Dong, Ziming; Shi, Tongtong; Yang, Yintang

152. Ultrahigh Frequency Ultrasonic Transducers Design with Low Noise Amplifier Integrated Circuit. MICROMACHINES. "2018.9.10". Li, Di; Fei, Chunlong; Zhang, Qidong; Li, Yani; Yang, Yintang; Zhou, Qifa

153. Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. "2018.430.(59-63)". Hu, P. P.; Liu, J.; Zhang, S. X.; Maaz, K.; Zeng, J.; Zhai, P. F.; Xu, L. J.; Cao, Y. R.; Duan, J. L.; Li, Z. Z.; Sun, Y. M.; Ma, X. H.

154. Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure. OPTICAL MATERIALS. "2018.78.(375-379)". Du, Jinjuan; Xu, Shengrui; Li, Peixian; Zhang, Jincheng; Zhao, Ying; Peng, Ruoshi; Fan, Xiaomeng; Hao, Yue

155. Influence of annealing atmosphere on the performance of a beta-Ga2O3 thin film and photodetector. OPTICAL MATERIALS EXPRESS. "2018.8.8(2229-2237)". Feng, Zhaoqing; Huang, Lu; Feng, Qian; Li, Xiang; Zhang, Hui; Tang, Weihua; Zhang, Jincheng; Hao, Yue

156. Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells. OPTICAL MATERIALS EXPRESS. "2018.8.6(1528-1535)". Peng, Ruoshi; Xu, Shengrui; Zhang, Jinfeng; Zhang, Jincheng; Du, Jinjuan; Zhao, Ying; Fan, Xiaomeng; Hao, Yue

157. Rainbow trapping and releasing in InSb graded subwavelength grooves by thermal tuning at the terahertz range. OPTICAL MATERIALS EXPRESS. "2018.8.9(2954-2966)". Kanyang, Ruoying; Zhang, Fan; Han, Genquan; Liu, Yan; Shao, Yao; Zhang, Jincheng; Hao, Yue

158. Tin-assisted growth of epsilon-Ga2O3 film and the fabrication of photodetectors on sapphire substrate by PLD. OPTICAL MATERIALS EXPRESS. "2018.8.11(3506-3517)". Cai, Yuncong; Zhang, Ke; Feng, Qian; Zuo, Yan; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhou, Hong; Lu, Xiaoli; Zhang, Chunfu; Tang, Weihua; Zhang, Jincheng; Hao, Yue

159. Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. "2018.95.(51-58)". Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Zhang, Heming; Cui, Shimin; Shu, Bin; Wang, Bin

160. Electronic Transport Properties in AlInGaN/AlGaN Heterostructures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. "2018.215.7". Li, Yao; Zhang, Jinfeng; Xue, Junshuai; Liu, Guipeng; Quan, Rudai; Duan, Xiaoling; Zhang, Jincheng; Hao, Yue

161. Influence of Nitrogen Concentration on Self-Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. "2018.215.14". Gao, Hai Xia; Jiang, Peng Fei; Zhang, Zhen Fei; Yang, Mei; Ma, Xiao Hua; Yang, Yin Tang

162. Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. "2018.215.14". Wang, Chong; He, Qing; Wu, Ji; Zheng, Xue-Feng; He, Yun-Long; Wang, Xin; Tian, Ye; Mao, Wei; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

163. The Recessed Trapezoidal Groove Dual-Gate AlGaN/GaN E-Mode Transistor by Using Depletion Enhancement Effect. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. "2018.215.10". Yang, Ling; Mi, Minhan; Hou, Bin; Zhu, Jiejie; Zhang, Meng; Lu, Yang; Zhu, Qing; Zhou, Xiaowei; Yin, Jun; Wu, Jiafeng; Ma, Xiaohua; Hao, Yue

164. Ferromagnetism observed in silicon-carbide-derived carbon. PHYSICAL REVIEW B. "2018.97.5". Peng, Bo; Zhang, Yuming; Wang, Yutian; Guo, Hui; Yuan, Lei; Jia, Renxu

165. A new superhard carbon allotrope: Orthorhombic C20. PHYSICS LETTERS A. "2018.382.25(1685-1689)". Wei, Qun; Zhao, Chenyang; Zhang, Meiguang; Yan, Haiyan; Zhou, Yingjiao; Yao, Ronghui

166. Investigation on the structural, morphological, electronic and photovoltaic properties of a perovskite thin film by introducing lithium halide. RSC ADVANCES. "2018.8.21(11455-11461)". Lin, Zhenhua; Zhu, Hai; Zhou, Long; Du, Jianhui; Zhang, Chunfu; Xu, Qing-Hua; Chang, Jingjing; Ouyang, Jianyong; Hao, Yue

167. A stretchable flexible electronic platform for mechanical and electrical collaborative design. SCIENCE CHINA-INFORMATION SCIENCES. "2018.61.6". Dong, Ziming; Duan, Baoxing; Li, Jiachen; Yang, Yintang

168. An intelligent partitioning approach of the system-on-chip for flexible and stretchable systems. SCIENCE CHINA-INFORMATION SCIENCES. "2018.61.6". Xu, Changqing; Liu, Yi; Yang, Yintang

169. Analysis of delay from step response based on stretchable flexible interconnects. SCIENCE CHINA-INFORMATION SCIENCES. "2018.61.10". Li, Jiachen; Duan, Baoxing; Dong, Ziming; Yang, Yintang

170. 4H-SiC monolithic Darlington transistors with slight current gain drop at high collector current density. SCIENCE CHINA-TECHNOLOGICAL SCIENCES. "2018.61.8(1238-1243)". Yuan, Lei; Song, QingWen; Tang, XiaoYan; Zhang, HongPeng; Zhang, YiMeng; Yang, Fei; Guo, LiXin; Zhang, YiMen; Zhang, YuMing

171. Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. "2018.33.2". Mao, Wei; Wang, Haiyong; Shi, Penghao; Yang, Cui; Zhang, Yantao; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

172. Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. "2018.33.7". Wang, Haiyong; Mao, Wei; Cong, Guanyu; Wang, Xiaofei; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

173. Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2 degrees misoriented sapphire template. THIN SOLID FILMS. "2018.663.(44-48)". Fan, X. M.; Bai, J. C.; Xu, S. R.; Zhang, J. C.; Li, P. X.; Peng, R. S.; Zhao, Y.; Du, J. J.; Shi, X. F.; Hao, Y.

174. Study on leakage current mechanism and band offset of high-k/n-InAlAs metal-oxide-semiconductor capacitors with HfO2 and HfAlO dielectric. THIN SOLID FILMS. "2018.661.(137-142)". Guan, He; Lv, Hongliang

175. Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing. AIP ADVANCES. "2018.8.4". Wu, Shujing; Miao, Dongming; Dai, Xianying; Shao, Chenfeng; Hao, Yue

176. Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures. AIP ADVANCES. "2018.8.6". Ren, Zeyang; Yuan, Guansheng; Zhang, Jinfeng; Xu, Lei; Zhang, Jincheng; Chen, Wanjiao; Hao, Yue

177. Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC. AIP ADVANCES. "2018.8.7". Deng, Sihao; Wang, Lielin; Xie, Hua; Wang, Zaihong; Wang, Yutian; Jiang, Shuqing; Guo, Hui

178. Spike encoding and storage properties in mutually coupled vertical-cavity surface-emitting lasers subject to optical pulse injection. APPLIED OPTICS. "2018.57.7(1731-1737)". Zhang, Yahui; Xiang, Shuiying; Gong, Junkai; Guo, Xinxing; Wen, Aijun; Hao, Yue

179. Repeater Insertion for Multi-Walled Carbon Nanotube Interconnects. APPLIED SCIENCES-BASEL. "2018.8.2". Liu, Peng-Wei; Cheng, Zi-Han; Zhao, Wen-Sheng; Lu, Qijun; Zhu, Zhangming; Wang, Gaofeng

180. Preparation of Monodispersed Carbon Spheres via Hydrothermal Carbonization of Ascorbic Acid and Their Application in Lithium Ion Batteries. CHEMICAL RESEARCH IN CHINESE UNIVERSITIES. "2018.34.4(628-634)". Zhou Xuejiao; Xu Liangyou; Liu Xiyao; Zhang Junjun; Diao Hongchao; Ma Xiaohua

181. Characteristics and threshold voltage model of GaN-based FinFET with recessed gate. CHINESE PHYSICS B. "2018.27.9". Wang, Chong; Wang, Xin; Zheng, Xue-Feng; Wang, Yun; He, Yun-Long; Tian, Ye; He, Qing; Wu, Ji; Mao, Wei; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

182. Closed-form internal impedance model and characterization of mixed carbon nanotube bundles for three-dimensional integrated circuits. CHINESE PHYSICS B. "2018.27.1". Lu, Qijun; Zhu, Zhangming; Yang, Yintang; Ding, Ruixue; Li, Yuejin

183. Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves. CHINESE PHYSICS B. "2018.27.8". Li, Hui; Chai, Chang-Chun; Liu, Yu-Qian; Wu, Han; Yang, Yin-Tang

184. Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors. CHINESE PHYSICS B. "2018.27.4". Luan, Su-Zhen; Wang, Yu-Cheng; Liu, Yin-Tao; Jia, Ren-Xu

185. Effect of SiN:H-x passivation layer on the reverse gate leakage current in GaN HEMTs. CHINESE PHYSICS B. "2018.27.9". Zhang, Sheng; Wei, Ke; Xiao, Yang; Ma, Xiao-Hua; Zhang, Chuan; Liu, Guo-Guo; Lei, Tian-Min; Zheng, Ying-Kui; Huang, Sen; Wang, Ning; Asif, Muhammad; Liu, Xin-Yu

186. Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor. CHINESE PHYSICS B. "2018.27.10". Yang, Shi-Zheng; Lv, Hong-Liang; Zhang, Yu-Ming; Zhang, Yi-Men; Lu, Bin; Yan, Si-Lu

187. Enhancement of off-state characteristics in junctionless field effect transistor using a field plate. CHINESE PHYSICS B. "2018.27.6". Wang, Bin; Zhang, He-Ming; Hu, Hui-Yong; Shi, Xiao-Wei

188. Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. CHINESE PHYSICS B. "2018.27.7". Li, Cong; Yan, Zhi-Rui; Zhuang, Yi-Qi; Zhao, Xiao-Long; Guo, Jia-Min

189. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions. CHINESE PHYSICS B. "2018.27.4". Mao, Wei; Wang, Hai-Yong; Shi, Peng-Hao; Wang, Xiao-Fei; Du, Ming; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

190. Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter. CHINESE PHYSICS B. "2018.27.6". Liu, Yu-Qian; Chai, Chang-Chun; Zhang, Yu-Hang; Shi, Chun-Lei; Liu, Yang; Fan, Qing-Yang; Yang, Yin-Tang

191. Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors. CHINESE PHYSICS B. "2018.27.7". Zhang, Tong; Pu, Taofei; Xie, Tian; Li, Liuan; Bu, Yuyu; Wang, Xiao; Ao, Jin-Ping

192. Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors. CHINESE PHYSICS B. "2018.27.9". Zhang, Jing; Lv, Hongliang; Ni, Haiqiao; Niu, Zhichuan; Zhang, Yuming

193. GaN-based FinFET with double-channel AlGaN/GaN heterostructure. ELECTRONICS LETTERS. "2018.54.5". Wang, Chong; Wang, Xin; Zheng, Xuefeng; He, Qing; Wu, Ji; Tian, Ye; Mao, Wei; Ma, Xiaohua; Hao, Yue

194. A Low-Cost and High-Gain 60-GHz Differential Phased Array Antenna in PCB Process. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. "2018.8.7(1281-1291)". Zhang, Tao; Li, Lianming; Xia, Haiyang; Ma, Xujun; Cui, Tie Jun

195. A Simplified Closed-Form Model and Analysis for Coaxial-Annular Through-Silicon Via in 3-D ICs. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. "2018.8.9(1650-1657)". Mei, Zheng; Dong, Gang

196. Wideband Electromagnetic Model and Analysis of Shielded-Pair Through-Silicon Vias. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. "2018.8.3(473-481)". Liao, Chenguang; Zhu, Zhangming; Lu, Qijun; Liu, Xiaoxian; Yang, Yintang

197. Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam-Induced Current. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. "2018.18.3(359-363)". Chen, Lixiang; Ma, Xiaohua; Zhu, Jiejie; Hou, Bin; Zhu, Qing; Zhang, Meng; Yang, Ling; Yin, Jun; Wu, Jiafen; Hao, Yue

198. Wideband Electromagnetic Modeling of Coaxial-Annular Through-Silicon Vias. IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY. "2018.60.6(1915-1922)". Lu, Qijun; Zhu, Zhangming; Liu, Yang; Liu, Xiaoxian; Yin, Xiangkun

199. Application of Novel Terminal Technologies for Superjunction Power MOSFETs. IETE TECHNICAL REVIEW. "2018.35.4(402-412)". Cao, Zhen; Duan, Baoxing; Shi, Tongtong; Yuan, Song; Yang, Yintang

200. Novel double fractal patches structure Antenna-in-Package based on LTCC technology for 2.4 GHz applications. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. "2018.28.5". Kuang, Dingding; Dong, Gang; Nie, Hui; Xiong, Wei; Yang, Yintang

201. GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template. JAPANESE JOURNAL OF APPLIED PHYSICS. "2018.57.5". Duan, Xiaoling; Zhang, Jincheng; Xiao, Ming; Zhang, Jinfeng; Hao, Yue

202. Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures. JAPANESE JOURNAL OF APPLIED PHYSICS. "2018.57.7". Rong, Taotao; Yang, Lin-An; Zhao, Ziyue; Yang, Lin; Hao, Yue

203. Regulation of the electronic properties of GaN(0001) surface by metal atoms. JAPANESE JOURNAL OF APPLIED PHYSICS. "2018.57.2". Li, Jiabin; Liu, Hongxia; Wu, Lei

204. The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC. JOURNAL OF CRYSTAL GROWTH. "2018.504.(37-40)". Niu Yingxi; Tang Xiaoyan; Sang Ling; Li Yun; Kong Lingyi; Tian Liang; Tian Honglin; Wu Pengfei; Jia Renxu; Yang Fei; Wu Junmin; Pan Yan; Zhang Yuming

205. Electron Momentum and Energy Relaxation Times in Wurtzite GaN, InN and AlN: A Monte Carlo Study. JOURNAL OF ELECTRONIC MATERIALS. "2018.47.2(1560-1568)". Wang, Shulong; Dou, Yanliu; Liu, Hongxia; Lin, Zhiyu; Zhang, Hailin

206. A 1.2 V, 3.0 ppm/degrees C, 3.6 mu A CMOS bandgap reference with novel 3-order curvature compensation. MICROELECTRONICS JOURNAL. "2018.72.(49-57)". Liu, Lianxi; Huang, Wenbin; Mu, Junchao; Zhu, Zhangming; Yang, Yintang

207. A 10-bit 100-MS/s 5.23-mW SAR ADC in 0.18-mu m CMOS. MICROELECTRONICS JOURNAL. "2018.78.(63-72)". Ma, Rui; Wang, Lisha; Li, Dengquan; Ding, Ruixue; Zhu, Zhangming

208. A 10bit 20 kS/s 17.7 nW 9.1ENOB reference-insensitive SAR ADC in 0.18 mu m CMOS. MICROELECTRONICS JOURNAL. "2018.73.(24-29)". Liang, Yuhua; Zhu, Zhangming

209. A charge-sharing switching scheme for SAR ADCs in biomedical applications. MICROELECTRONICS JOURNAL. "2018.75.(128-136)". Zhang, Yanbo; Li, Yani; Zhu, Zhangming

210. A dual mode step-down switched-capacitor DC-DC converter with adaptive switch width modulation. MICROELECTRONICS JOURNAL. "2018.78.(114-123)". Liu, Lianxi; Chen, Hao; Hua, Tianyuan; Mu, Junchao; Zhu, Zhangming; Yang, Yintang

211. Modulation speed limits of a graphene-based modulator. OPTICAL AND QUANTUM ELECTRONICS. "2018.50.2". Qu, Sheng; Ma, Congcong; Wang, Shulong; Liu, Hongxia; Dong, Lu

212. The optical properties of GaN (001)surface modified by intrinsic defects from density functional theory calculation. OPTIK. "2018.154.(378-382)". Li, Jiabin; Liu, Hongxia; Wu, Lei

213. A Thermal Physics Model of Continuous Wave Laser Irradiation of SiO2/Ge/Sapphire Epitaxial Films. SCIENCE OF ADVANCED MATERIALS. "2018.10.10(1457-1465)". Zhang, Jie; Song, Jianjun; Chen, Hangyu; Hu, Huiyong; Zhang, Heming

214. Investigation of surface PiN diodes for a novel reconfigurable antenna. SOLID-STATE ELECTRONICS. "2018.139.(48-53)". Su, Han; Hu, Huiyong; Zhang, Heming; Wang, Bin; Kang, Haiyan; Wang, Yu; Hao, Minru

215. Research of the SPiN diodes for silicon-based reconfigurable holographic antenna. SOLID-STATE ELECTRONICS. "2018.146.(28-33)". Su, Han; Hu, Huiyong; Shu, Bin; Wang, Bin; Wang, Wei; Wang, Jiaxiang

216. Analysis of the novel Si/SiC heterojunction IGBT characteristics by TCAD simulation. SUPERLATTICES AND MICROSTRUCTURES. "2018.122.(631-635)". Sun, Licheng; Duan, Baoxing; Yang, Xin; Wang, Yandong; Yang, Yintang

217. Analytical model of AlGaN/GaN HEMTs with a partial GaN cap layer. SUPERLATTICES AND MICROSTRUCTURES. "2018.123.(210-217)". Guo Haijun; Duan Baoxing; Wu Hao; Yang Yintang

218. Design and theoretical calculation of novel GeSn fully depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect. SUPERLATTICES AND MICROSTRUCTURES. "2018.118.(266-274)". Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Miao, Yuanhao; Han, Genquan; Wang, Bin

219. Effects of 4 degrees misoriented sapphire substrate on optical property of green InGaN/GaN multiple quantum wells. SUPERLATTICES AND MICROSTRUCTURES. "2018.113.(519-523)". Peng, Ruoshi; Bai, Junchun; Xu, Shengrui; Zhang, Jincheng; Du, Jinjuan; Zhao, Ying; Fan, Xiaomeng; Wu, Mei; Hao, Yue

220. Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O-2 plasma. SUPERLATTICES AND MICROSTRUCTURES. "2018.114.(421-427)". Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

221. Investigation of temperature dependent electrical characteristics on Au/Ni/beta-Ga2O3 Schottky diodes. SUPERLATTICES AND MICROSTRUCTURES. "2018.119.(212-217)". Li, Ang; Feng, Qian; Zhang, Jincheng; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Zhang, Chunfu; Zhou, Hong; Hao, Yue

222. Novel lateral double-diffused MOSFET with folded silicon and high-permittivity dielectric breaking silicon limit. SUPERLATTICES AND MICROSTRUCTURES. "2018.123.(280-285)". Duan, Baoxing; Shi, Tongtong; Yang, Yintang

223. Optical properties of (AlxGa1-x)(2)O-3 on sapphire. SUPERLATTICES AND MICROSTRUCTURES. "2018.114.(82-88)". Hu, Zhuangzhuang; Feng, Qian; Zhang, Jincheng; Li, Fuguo; Li, Xiang; Feng, Zhaoqing; Zhang, Chunfu; Hao, Yue

224. Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement. SUPERLATTICES AND MICROSTRUCTURES. "2018.115.(154-167)". Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

225. Research on the growth of beta-(AlGa)(2)O-3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model. SUPERLATTICES AND MICROSTRUCTURES. "2018.120.(441-447)". Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Xing, Xiangyu; Zuo, Yan; Yan, Guangshuo; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng

226. Theoretical research of diluted magnetic semiconductors: GaN monolayer doped with transition metal atoms. SUPERLATTICES AND MICROSTRUCTURES. "2018.120.(382-388)". Li, Jia-Bin; Liu, Hong-Xia

227. Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide. SUPERLATTICES AND MICROSTRUCTURES. "2018.122.(501-509)". Zhang, Siqing; Liu, Yan; Fang, Cizhe; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

228. Mechanical Properties and Stability of Body-Centered-Tetragonal C-8 at High Pressures. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES. "2018.73.10(939-945)". Zhao, Chenyang; Wei, Qun; Yan, Haiyan; Wei, Bing

229. Pressure and Strain Effects on the Structural, Electronic, and Optical Properties of K-4 Phosphorus. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES. "2018.73.7(661-668)". Zhao, Chenyang; Wei, Qun; Zhang, Meiguang; Yan, Haiyan; Yang, Xinchao; Zhou, Yingjiao; Wei, Bing; Ma, Jianli

230. Band structure model of modified Ge for optical device application. ACTA PHYSICA SINICA. "2018.67.19". Yang Wen; Song Jian-Jun; Ren Yuan; Zhang He-Ming

231. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. ACTA PHYSICA SINICA. "2018.67.2". Di Lin-Jia; Dai Xian-Ying; Song Jian-Jun; Miao Dong-Ming; Zhao Tian-Long; Wu Shu-Jing; Hao Yue

232. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor. ACTA PHYSICA SINICA. "2018.67.6". Zhang Jin-Feng; Yang Peng-Zhi; Ren Ze-Yang; Zhang Jin-Cheng; Xu Sheng-Rui; Zhang Chun-Fu; Xu Lei; Hao Yue

233. Density functional theory calculation of diffusion mechanism of intrinsic defects in rutile TiO2. ACTA PHYSICA SINICA. "2018.67.17". Liu Ru-Lin; Fang Liang; Hao Yue; Chi Ya-Qing

234. First-principles study of hydrogen storage properties of silicene under different Li adsorption components. ACTA PHYSICA SINICA. "2018.67.10". Sheng Zhe; Dai Xian-Ying; Miao Dong-Ming; Wu Shu-Jing; Zhao Tian-Long; Hao Yue

235. New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS. ACTA PHYSICA SINICA. "2018.67.6". Chen Hang-Yu; Song Jian-Jun; Zhang Jie; Hu Hui-Yong; Zhang He-Ming

236. Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate. ADVANCES IN CONDENSED MATTER PHYSICS. "2018..". Zhang, Chao; Song, Jianjun; Zhang, Jie; Liu, Shulin

237. A 99.77% energy-reduced asymmetric capacitance switching scheme for SAR ADC with split-capacitor method. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. "2018.96.1(197-206)". Liu, Jian; Liu, Shubin; Ding, Ruixue; Zhu, Zhangming

238. A highly energy-efficient, highly area-efficient capacitance multiplexing switching scheme for SAR ADC. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. "2018.96.1(207-215)". Liu, Jian; Ding, Ruixue; Liu, Shubin; Zhu, Zhangming

239. High energy-efficient partial floating capacitor array DAC scheme for SAR ADCs. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. "2018.94.1(171-175)". Zhang, Jin; Zhu, Zhangming

240. PN-assisted digital background calibration of two-step ADC to over 14-bit accuracy. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. "2018.94.1(75-82)". Liu, Maliang; Hu, Jin; Zhang, Sirui; Zhu, Zhangming

241. Two-step switching scheme for SAR ADC with high energy efficiency. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. "2018.96.1(189-195)". Zhang, Chenggao; Liu, Shubin; Zhu, Zhangming

242. Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition. CHINESE PHYSICS LETTERS. "2018.35.7". Ren, Ze-Yang; Zhang, Jin-Feng; Zhang, Jin-Cheng; Xu, Sheng-Rui; Zhang, Chun-Fu; Su, Kai; Li, Yao; Hao, Yue

243. Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer. CHINESE PHYSICS LETTERS. "2018.35.7". Niu, Ying-Xi; Tang, Xiao-Yan; Jia, Ren-Xu; Sang, Ling; Hu, Ji-Chao; Yang, Fei; Wu, Jun-Min; Pan, Yan; Zhang, Yu-Ming

244. Ohmic Contact at Al/TiO2/n-Ge Interface with TiO2 Deposited at Extremely Low Temperature. CHINESE PHYSICS LETTERS. "2018.35.2". Zhang, Yi; Han, Gen-Quan; Liu, Yan; Liu, Huan; Zhang, Jin-Cheng; Hao, Yue

245. Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition. CHINESE PHYSICS LETTERS. "2018.35.2". Lin, Zhi-Yu; Chen, Zhi-Bin; Zhang, Jin-Cheng; Xu, Sheng-Rui; Jiang, Teng; Luo, Jun; Guo, Li-Xin; Hao, Yue

246. 1-30 GHz ultra-wideband low noise amplifier with on-chip temperature-compensation circuit. IEICE ELECTRONICS EXPRESS. "2018.15.20". Yang, Lin; Yang, Lin-An; Rong, Taotao; Jin, Zhi; Hao, Yue

247. A broadband high efficiency monolithic power amplifier with GaAs HBT. IEICE ELECTRONICS EXPRESS. "2018.15.10". Li, Shaojun; Lv, Hongliang; Zhang, Yimen; Zhang, Yuming; Zhang, Yansong; Asif, Muhammad

248. Effectiveness of the layout approach in mitigating single event transients in 65-nm bulk CMOS process. IEICE ELECTRONICS EXPRESS. "2018.15.13". Li, Tiehu; Yang, Yintang; Li, Liang; Liu, Jia; Zhang, Junan

249. Real-Time Road-Direction Point Detection in Complex Environment. IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS. "2018.E101D.2(396-404)". Cai, Huimin; Liu, Eryun; Liu, Hongxia; Wang, Shulong

250. Unified multi-objective mapping for network-on-chip using genetic-based hyper-heuristic algorithms. IET COMPUTERS AND DIGITAL TECHNIQUES. "2018.12.4(158-166)". Xu, Changqing; Liu, Yi; Li, Peng; Yang, YinTang

251. Comparative study of 9R and 12R hexagonal diamond by first-principles calculations. INTERNATIONAL JOURNAL OF MODERN PHYSICS B. "2018.32.20". Wang, Qian; Zhang, Quan

252. First-principles investigations on structural, elastic and mechanical properties of BNxAs1-x ternary alloys. INTERNATIONAL JOURNAL OF MODERN PHYSICS B. "2018.32.12". Zhang, Junqin; Ma, Huihui; Zhao, Bin; Wei, Qun; Yang, Yintang

253. Growth optimization of GaAs-based InAs/AlSb 2DEG structure. JOURNAL OF INFRARED AND MILLIMETER WAVES. "2018.37.4(385-388)". Cui Xiao-Ran; Lyu Hong-Liang; Li Jin-Lun; Su Xiang-Bin; Xu Ying-Qiang; Niu Zhi-Chuan

254. The photoelectric property of graphene modified by boron and nitrogen atoms from density functional theory calculation. JOURNAL OF INFRARED AND MILLIMETER WAVES. "2018.37.1(25-29)". Li Jia-Bin; Liu Hong-Xia; Wu Lei

255. Electron Conductivity Effective Mass Model for Strained-Ge. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. "2018.13.7(986-994)". Yang, W.; Song, J. J.; Hu, H. Y.; Zhang, H. M.

256. Study and Theoretical Calculation of Germanium-Tin n-Tunneling FET for Low Off-State Current. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. "2018.13.7(965-970)". Tang, Wei-Bin; Song, Ya-Feng; Liu Xiangyu

257. Etched Al0.32Ga0.68N/GaN HEMTs with high output current and breakdown voltage (> 600 V). MICRO & NANO LETTERS. "2018.13.5(676-679)". Duan, Baoxing; Xie, Shenlong; Guo, Haijun; Yang, Yintang

258. Improving metal/n-Ge ohmic contact by inserting TiO2 deposited by PEALD. MICRO & NANO LETTERS. "2018.13.6(801-803)". Zhang, Yi; Liu, Yan; Han, Genquan; Liu, Huan; Hao, Yue

259. SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology. MICRO & NANO LETTERS. "2018.13.1(96-99)". Duan, Baoxing; Lv, Jianmei; Zhao, Yihan; Yang, Yintang

260. A 110-170 GHz spatial power-combined frequency tripler with 5.7%-7.8% efficiency and 0.5 W power handling. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. "2018.60.5(1079-1085)". Deng, Jian Qin; Lu, Qjjun J.; Yang, Yin Tang; Zhu, Zhang Ming

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263. Mott variable range hopping and bad-metal in lightly doped spin-orbit Mott insulator BaIrO3. PHYSICAL REVIEW MATERIALS. "2018.2.6". Ma, H. J. Harsan; Yang, P.; Lim, Z. S.; Ariando

264. Highly efficient perovskite solar cells based on a dopant-free conjugated DPP polymer hole transport layer: influence of solvent vapor annealing. SUSTAINABLE ENERGY & FUELS. "2018.2.10(2154-2159)". Guo, Xing; Zhang, Bingjuan; Lin, Zhenhua; Su, Jie; Yang, Zhou; Zhang, Chunfu; Chang, Jingjing; Liu, Shengzhong (Frank); Hao, Yue

 

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