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2018年会议论文
作者:  文章来源:  发布时间:2019-03-01  阅读次数:294

1.  A simulation based study of NC-FETs design: off-state versus on-state perspective. IEEE International Electron Devices Meeting, San Francisco, CA, USA. Dec. 2018. T. Rollo, H. Wang, G. Han, and D. Esseni.

2.  Photonic Generation of Neuron-Like Dynamics Using VCSELs Subject to Double Polarized Optical Injection. International Topical Meeting on Microwave Photonics (MWP). OCT 23-26, 2017. Xiang, Shuiying; Zhang, Yahui; Guo, Xingxing; Wen, Aijun; Hao, Yue.

3.  Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed. International Conference on Solid State Devices and Materials (SSDM). SEP 19-22, 2017. Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue.

4.  A highly energy-efficient switching scheme for SAR ADC with the redundant capacitance splitting technology. 10th International Conference on Electrical and Electronics Engineering (ELECO). NOV 30-DEC 02, 2017. Liu, Jian; Liu, Shubin; Huang, Lei; Zhu, Zhangming.

5.  Energy-efficient switching scheme based on floating technique for SAR ADC. 10th International Conference on Electrical and Electronics Engineering (ELECO). NOV 30-DEC 02, 2017. Ding, Ruixue; Sun, Depeng; Liu, Shubin; Liang, Hongzhi; Zhu, Zhangming.

6.  Modeling of Equivalent Thermal Conductivity of Power Delivery Network in 3D Packages. 19th International Conference on Electronic Packaging Technology (ICEPT). AUG 08-11, 2018. Zhu, Weijun; Dong, Gang; Mei, Zheng; Zheng, Junping; Chai, Jingrui; Song, Dongliang.

7.  A first principle calculation of anisotropic elastic, mechanical and electronic properties of TiB. 2nd Annual International Symposium on Material Science and Engineering (ISMSE). JAN 19-21, 2018. Zhang, Junqin; Zhao, Bin; Ma, Huihui; Wei, Qun; Yang, Yintang.

8.  Electronic and Elastic properties of the antifluorite structure Mg2Si under pressure. 2nd International Conference on Materials Science, Energy Technology, Power Engineering (MEP). APR 14-15, 2018. Zhang, Junqin; Ma, Huihui; Zhao, Bin; Wei, Qun; Yang, Yintang.

9.  Single-inductor Multiple-output Converter for High-power LED Applictions with Independent Current Control Based on SiC SBD. 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC). MAR 04-08, 2018. Liu, JinJin; Lv, Hongliang; Zhang, Yimeng; Song, Qingwen; Zhang, Yuming; Tang, Xiaoyan.

10.  Development of E-Mode AlGaN/GaN HJFETs. The 2018 Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM2018). 2018. Taofei Pu, Xiao Wang, Qian Huang, Xiaobo Li, Yuyu Bu and Jin-Ping Ao.

11. GaN Schottky barrier diodes for microwave power transmission. IEEE MTT-S International Wireless Symposium (IWS). 2018. T. Pu, X. Li, X. Wang, Y. Bu, W. Zhao, Z. Chen, and J. P. Ao.

12. Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.  2018 IEEE International Reliability Physics Symposium (IRPS). 2018. J Zhu, B Hou, L Chen, Q Zhu, L Yang, X Zhou, P Zhang, X Ma, Y Hao.

13. Characteristic Analysis of Normally-off Al2O3/H-diamond MOSFET with 40-μm Gate Length. Solid State Devices and Materials 2018 SSDM. 2018. Jinfeng Zhang.

14. Growth and Characterization of InAlN/AlGaN Heterostructures. 7th International Symposium on Growth of III-Nitrides. August 5-10, 2018. Junshuai Xue.

15. Optimization of Ohmic Resistance and Its Application to Improve the Performance of β-Ga2O3 nano-membrane MOSFETs.  2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). Oct.31-Nov.3 2018. Zhaoqing Feng, Qian Feng, Hong Zhou, Zhuangzhuang Hu, Wenwu Xiao, Dan Zhang, Feng Huang, Jincheng Zhang, Yue Hao.

16. Passivated lateral β-Ga2O3 Schottky Barrier Diode on Sapphire Substrate with Reverse Blocking Voltage of 1.9 kV. 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). Oct.31-Nov.3 2019. Zhuangzhuang Hu, Hong Zhou, Zhaoqing Feng, Qian Feng, Jincheng Zhang, Yue Hao.

17. Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide.  the 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies, Chengdu, China. June 26-29, 2018. Siqing Zhang, Cizhe Fang, Yan Liu, Yao Shao, Genquan Han,* Jincheng Zhang, and Yue Hao.

18. Ferroelectric Negative Capacitance Field Effect Transistors with HfZrOx Grown by ALD. the 4th International Conference on ALD Applications & 2018 China ALD Conference. 2018. Genquan Han, Yan Liu, and Yue Hao.

19. Experimental Investigation of Fundamentals of Negative Capacitance FETs. 2018 IEEE S3S Conference. 2018. Genquan Han, Jiuren Zhou, Yan Liu, Jing Li, Yue Peng, and Yue Hao.

20. Self-aligned Ge nMOSFETs with gate-last process on GeOI platform. International Conference on Solid-State and Integrated Circuit Technology. IEEE, 2018: Accepted. Oral presentation. 2018. Yi Zhang, Genquan Han, Yan Liu, Huan Liu, Jing Li, and Yue Hao.

21. Porous Structures for Absorption Enhancement in Black Phosphorus Active Layer Based on Plasmonic Nanocavity. the 13th Annual IEEE International Conference on Nano/Micro Engineered and Molecular System, Grand Hyatt Singapore. 2018. Cizhe Fang, Yan Liu, Genquan Han, Yao Shao, Yan Huang, Jincheng Zhang, and Yue Hao.

22. Highly doped silicon graded grating strips for rainbow trapping at the terahertz range. the 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies, Chengdu, China. 2018. Yan Liu, Cizhe Fang, Ruoying Kanyang, Genquan Han, Yao Shao, Yan Huang, Siqing Zhang, Jincheng Zhang, and Yue Hao.

23. Negative Capacitance Transistors with Sub-kT/q Swing. the 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies, Chengdu, China. 2018. Jing Li, Jiuren Zhou, Genquan Han, Yan liu, Yue Peng, Jincheng Zhang, and Yue Hao.

24. Phonon Limited Electron Mobility in Germanium FinFETs: Fin Direction Dependence. IEEE 14th International Conference on Solid-State and Integrated Circuit Technology. 2018. Ying Jing, Genquan Han, Yan Liu, Jincheng Zhang, and Yue Hao.

25. U-Gate SiGeSn/GeSn Heterojunction Tunneling Field-Effect Transistors. IEEE 14th International Conference on Solid-State and Integrated Circuit Technology.  2018. Meng Liu, Genquan Han, Yan Liu, and Yue Hao.

26. Buffer-Free GeSn Photodetector Based on Si with Extended Cutoff Wavelength. 2018 International Conference on Solid State Devices and Materials (SSDM2018). September 9 - 13, 2018. Yibo Wang, Cizhe Fang, Yan Liu, Genquan Han, and Yue Hao.

27. Deep Experimental Analysis of Negative Capacitance in HfZrOx-Based Field-Effect TransistorsShort Presentation and Poster. 2018 International Conference on Solid State Devices and Materials (SSDM2018). September 9 - 13, 2018. Jing Li, Jiuren Zhou, Genquan Han, Yan liu, and Yue Hao.

28. Interface Tuning of metal/β-Ga2O3 Schottky barrier diode by Post Thermal Annealing, 2018 International Conference on Solid State Devices and Materials (SSDM2018). September 9 - 13, 2018. Yibo Wang, Jibao Wu, Genquan Han, Yan Liu and Yue Hao.

29. Improved thermal stability of Al/TiO2/n-Ge ohmic contact by inserting single layer graphene. the 18th International Workshop on Junction Technology (IWJT). May 8-9, 2018. Yi Zhang, Genquan Han, Jiabo Chen, Yan Liu, Jincheng Zhang, and Yue Hao.

30. Characterization of Self-Heating in GaN HEMTs Using Channel Resistance Measurement. international workshop on nitride semiconductors (IWN). 2018. Mei Wu.

31. RF Performance and Small-signal Characteristic Analysis for AlGaN/GaN Multi-fin HEMTs. international workshop on nitride semiconductors (IWN). 2018. Hengshuang Zhang.

32. In-situ N2O plasma treatment and its application to fabrication of inhibiting gate leakage.. international workshop on nitride semiconductors (IWN). 2018. Xinchuang Zhang.

33. Effect of a TiN extension of the source contact on the electrical characteristics of E/D-mode AlGaN/GaN HEMT. international workshop on nitride semiconductors (IWN). 2018. Ling Yang.

34. Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies. international workshop on nitride semiconductors (IWN). 2018. Meng Zhang.

35. High performance lateral AlGaN/GaN schottky barrier diode with tungsten anode. international workshop on nitride semiconductors (IWN). 2018. Tao Zhang.

36. High breakdown voltage GaN quasi-vertical Schottky diode fabricated on patterned sapphire substrate. international workshop on nitride semiconductors (IWN). 2018. Zhaoke Bian.

37. Growth and characterization of AlGaN alloys for power electronic devices application.. international workshop on nitride semiconductors (IWN). 2018. Junshuai Xue.

38. DC and RF characteristics comparison of recessed gate normally off GaN based MISHEMT fabricated using CF4-based and Cl2-based plasma gate recessing process.. international workshop on nitride semiconductors (IWN). 2018. Bin Hou.

39. Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistors. international workshop on nitride semiconductors (IWN). 2018. Lixiang Chen.

40. Reliability investigation of AlGaN/GaN HEMTs for deep space exploration. international workshop on nitride semiconductors (IWN). 2018. Qing Zhu.

41. Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment. international workshop on nitride semiconductors (IWN). 2018. Minhan Mi.

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