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2017年刊物论文
作者:  文章来源:  发布时间:2017-12-31  阅读次数:37

2017年刊物论文(221篇)

1.Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics

ADVANCED MATERIALS,2017.29.33(1702411). Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

2.Improving the Performance of Graphene Phototransistors Using a Heterostructure as the Light-Absorbing Layer

NANO LETTERS,2017.17.10(6391-6396) .Chen, Xiaoqing; Liu, Xiaolong; Wu, Bing; Nan, Haiyan; Guo, Hui; Ni, Zhenhua; Wang, Fengqiu; Wang, Xiaomu; Shi, Yi; Wang, Xinran

3.Flexible Quasi-Two-Dimensional CoFe2O4 Epitaxial Thin Films for Continuous Strain Tuning of Magnetic Properties

ACS NANO,2017.11.8(8002-8009) .Zhang, Yong; Shen, Lvkang; Liu, Ming; Li, Xin; Lu, Xiaoli; Lu, Lu; Ma, Chunrui; You, Caiyin; Chen, Aiping; Huang, Chuanwei; Chen, Lang; Alexe, Marin; Jia, Chun-Lin

4.Ultralight and Binder-Free All-Solid-State Flexible Supercapacitors for Powering Wearable Strain Sensors

ADVANCED FUNCTIONAL MATERIALS,2017.27.39(1702738). Li, Weigu; Xu, Xiaobin; Liu, Chang; Tekell, Marshall C.; Ning, Jing; Guo, Jianhe; Zhang, Jincheng; Fan, Donglei

5.Enhanced efficiency of planar perovskite solar cells via a two-step deposition using DMF as an additive to optimize the crystal growth behavior

JOURNAL OF MATERIALS CHEMISTRY A,2017.5.25(13032-13038) .Mo, Jiajie; Zhang, Chunfu; Chang, Jingjing; Yang, Haifeng; Xi, He; Chen, Dazheng; Lin, Zhenhua; Lu, Gang; Zhang, Jincheng; Hao, Yue

6.Improving the efficiency and stability of inverted perovskite solar cells with dopamine-copolymerized PEDOT: PSS as a hole extraction layer

JOURNAL OF MATERIALS CHEMISTRY A,2017.5.26(13817-13822). Huang, Ju; Wang, Kai-Xuan; Chang, Jing-Jing; Jiang, Yan-Yun; Xiao, Qi-Shi; Li, Yuan

7.A Versatile OCP Control Scheme for Discontinuous Conduction Mode Flyback AC/DC Converters

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS,2017.64.8(6443-6452). Wu, Qiang; Zhu, Zhangming

8.Inhibition of Zero Drift in Perovskite-Based Photodetector Devices via [6,6]-Phenyl-C61-butyric Acid Methyl Ester Doping

ACS APPLIED MATERIALS & INTERFACES,2017.9.18(15638-15643). Liu, Yintao; Jia, Renxu; Wang, Yucheng; Hu, Ziyang; Zhang, Yuming; Pang, Tiqiang; Zhu, Yuejin; Luan, Suzhen

9.Intermediate Phase Intermolecular Exchange Triggered Defect Elimination in CH3NH3PbI3 toward Room-Temperature Fabrication of Efficient Perovskite Solar Cells

ACS APPLIED MATERIALS & INTERFACES, Vol. 9,No. 46,pp:40378-4038,2017. Zhu,WD;Chen, DZ; Zhou, L; Zhang, CF; Chang, JJ; Lin, ZH; Zhang, JC; Hao, Y

10.A PSR CC/CV Flyback Converter With Accurate CC Control and Optimized CV Regulation Strategy

IEEE TRANSACTIONS ON POWER ELECTRONICS,2017.32.9(7045-7055) .Wang, Zeyu; Lai, Xinquan; Wu, Qiang

11.An Adaptive High-Precision OCP Control Scheme for Flyback AC/DC Converters

IEEE TRANSACTIONS ON POWER ELECTRONICS,2017.32.12(8969-8973). Wu, Qiang; Zhu, Zhangming

12.Self-Compensating OCP Control Scheme for Primary-Side Controlled Flyback AC/DC Converters

IEEE TRANSACTIONS ON POWER ELECTRONICS,2017.32.5(3673-3682). Zhu, Zhangming; Wu, Qiang; Wang, Zeyu

13.Atomic-scale investigation of a new phase transformation process in TiO2 nanofibers

NANOSCALE,2017.9.13(4601-4609).Lei, Yimin; Li, Jian; Wang, Zhan; Sun, Jun; Chen, Fuyi; Liu, Hongwei; Ma, Xiaohua; Liu, Zongwen

14.3-D-MIMO With Massive Antennas Paves the Way to 5G Enhanced Mobile Broadband: From System Design to Field Trials

IEEE Journal on Selected Areas in Communications,2017.35.6(1222-1233). Guangyi Liu;Xueying Hou;Jing Jin;Fei Wang;Qixing Wang;Yue Hao;Yuhong Huang;Xiaoyun Wang;Xiao Xiao;Ailin Deng

15.Effect of ultraviolet absorptivity and waterproofness of poly(3,4-ethylenedioxythiophene) with extremely weak acidity, high conductivity on enhanced stability of perovskite solar cells

JOURNAL OF POWER SOURCES,2017.358(29-38).Yu, Wei; Wang, Kaixuan; Guo, Bin; Qiu, Xueqing; Hao, Yue; Chang, JingJing; Li, Yuan

16.Effect of ultraviolet absorptivity and waterproofness of poly(3,4-ethylenedioxythiophene) with extremely weak acidity, high conductivity on enhanced stability of perovskite solar cells

JOURNAL OF POWER SOURCES,2017.358(29-38). Yu, Wei; Wang, Kaixuan;Guo, Bin;Qiu, Xueqing; Hao, Yue; Chang, JingJing; Li, Yuan

17.Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

SCIENTIFIC REPORTS,2017.7(13376). Liu, Linyue; Liu, Ao; Bai, Song; Lv, Ling; Jin, Peng; Ouyang, Xiaoping

18.Tunable graphene-based hybrid plasmonic modulators for subwavelength confinement

SCIENTIFIC REPORTS,2017.7(5190).Qu, Sheng; Ma, Congcong; Liu, Hongxia

19.Efficient bifacial semitransparent perovskite solar cells with silver thin film electrode

SOLAR ENERGY MATERIALS AND SOLAR CELLS,2017.170.(278-286).Pang, Shangzheng; Chen, Dazheng; Zhang, Chunfu; Chang, Jingjing; Lin, Zhenhua; Yang, Haifeng; Sun, Xu; Mo, Jiajie; Xi, He; Han, Genquan; Zhang, Jincheng; Hao, Yue

20.Enhanced planar heterojunction perovskite solar cell performance and stability using PDDA polyelectrolyte capping agent

SOLAR ENERGY MATERIALS AND SOLAR CELLS,2017.172.(133-139).Lin, Zhenhua; Chang, Jingjing; Zhu, Hai; Xu, Qing-Hua; Zhang, Chunfu; Ouyang, Jianyong; Hao, Yue

21.Enhanced Performance and Stability of Polymer Solar Cells by In Situ Formed AlOx Passivation and Doping

JOURNAL OF PHYSICAL CHEMISTRY C,2017.121.19(10275-10281). Lin, Zhenhua; Chang, Jingjing; Zhang, Chunfu; Chen, Dazheng; Wu, Jishan; Hao, Yue

22.Gate-Tunable Electronic Structure of Black Phosphorus/HfS2 P-N van der Waals Heterostructure with Uniformly Anisotropic Band Dispersion

JOURNAL OF PHYSICAL CHEMISTRY C,2017.121.44(24845-24852). Zhu, Jiaduo; Xu, Shengrui; Ning, Jing; Wang, Dong; Zhang, Jincheng; Hao, Yue

23.Two novel Ge phases and their Si-Ge alloys with excellent electronic and optical properties

MATERIALS & DESIGN,2017.132.(539-551). Fan, Qingyang; Chai, Changchun; Wei, Qun; Zhou, Peikun; Yang, Yintang

24.Electronic Devices for Human-Machine Interfaces

ADVANCED MATERIALS INTERFACES,2017.4.4(1600709). Wang, Hong; Ma, Xiaohua; Hao, Yue

25.Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors

PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2017.19.20(13002-13009).Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

26.Defect-induced magnetism in SiC probed by nuclear magnetic resonance

PHYSICAL REVIEW B, 2017.95.8(85203). Zhang, Z. T.; Dmytriieva, D.; Molatta, S.; Wosnitza, J.; Wang, Yutian; Helm, M.; Zhou, Shengqiang; Kuehne, H.

27.Controllable growth of monolayer MoS2 by chemical vapor deposition via close MoO2 precursor for electrical and optical applications

NANOTECHNOLOGY,2017.28.8(84001). Xie, Yong; Wang, Zhan; Zhan, Yongjie; Zhang, Peng; Wu, Ruixue; Jiang, Teng; Wu, Shiwei; Wang, Hong; Zhao, Ying; Nan, Tang; Ma, Xiaohua

28.NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

NANOTECHNOLOGY,2017.28.32(325602).Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

29.Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition

NANOTECHNOLOGY,2017.28.28.Ning, Jing; Wang, Dong; Chai, Yang; Feng, Xin; Mu, Meishan; Guo, Lixin; Zhang, Jincheng; Hao, Yue

30.Cascadable Neuron-Like Spiking Dynamics in Coupled VCSELs Subject to Orthogonally Polarized Optical Pulse Injection

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2017.23.6. Xiang, Shui Ying; Zhang, Hao; Guo, Xing Xing; Li, Jia Fu; Wen, Ai Jun; Pan, Wei; Hao, Yue

31.One-step exfoliation of ultra-smooth beta-Ga2O3 wafers from bulk crystal for photodetectors

CRYSTENGCOMM,2017.19.34(5122-5127) .Mu, Wenxiang; Jia, Zhitai; Yin, Yanru; Hu, Qiangqiang; Zhang, Jian; Feng, Qian; Hao, Yue; Tao, Xutang

32.One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors

CrystEngComm,2017.19.34(5122-5127). Wenxiang Mu;Zhitai Jia;Yanru Yin;Qiangqiang Hu;Jian Zhang;Qian Feng;Yue Hao;Xutang Tao

33.Engineering rainbow trapping and releasing in ultrathin THz plasmonic graded metallic grating strip with thermo-optic material

OPTICS EXPRESS,2017.25.2(1278-1287).Liu, Yan; Wang, Yibo; Han, Genquan; Shao, Yao; Fang, Cizhe; Zhang, Siqing; Huang, Yan; Zhang, Jincheng; Hao, Yue

34.Simulation investigation of strained black phosphorus photodetector for middle infrared range

OPTICS EXPRESS,2017.25.20(24705-24713).Zhang, Siqing; Liu, Yan; Shao, Yao; Fang, Cizhe;Han, Genquan; Zhang, Jincheng; Hao, Yue

35.Hybrid Tube-Triangle Plasmonic Waveguide for Ultradeep Subwavelength Confinement

JOURNAL OF LIGHTWAVE TECHNOLOGY,2017.35.11(2259-2265). Dong, Lu; Liu, Hongxia; Wang, Shulong; Qu, Sheng; Wu, Lei

36.90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

APPLIED PHYSICS LETTERS,2017.111.17 (173502). Mi, Min-Han; Ma, Xiao-Hua; Yang, Ling; Bin-Hou; Zhu, Jie-Jie; He, Yun-Long; Zhang, Meng; Wu, Sheng; Hao, Yue

37.Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates

APPLIED PHYSICS LETTERS,2017.110.13  (133505).Liu, Chen; Cho, Sang June; Jung, Yei Hwan; Chang, Tzu-Hsuan; Seo, Jung-Hun; Mikael, Solomon; Zhang, Yuming; Zhang, Yi-Men; Lu, Hongliang; Guo, Xin Li; Mi, Hongyi; Zhang, Huilong; Ma, Zhenqiang

38.Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

APPLIED PHYSICS LETTERS,2017.11.16(163502).Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Wu, Mei; Hou, Bin; Yang, Ling; Hao, Yue; Ma, Xiaohua

39.Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

APPLIED PHYSICS LETTERS,2017.110.19(193502) .Zhang, Meng; Ma, Xiao-Hua; Mi, Min-Han; He, Yun-Long; Hou, Bin; Zheng, Jia-Xin; Zhu, Qing; Chen, Li-Xiang; Zhang, Peng; Yang, Ling

40.Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

APPLIED PHYSICS LETTERS,Vol.111,No. 22(222107) Zhang, YC; Wang, ZZ; Xu, SR; Chen, DZ; Bao, WM; Zhang, JF ; Zhang, JC ; Hao, Y

41.Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures

APPLIED PHYSICS LETTERS,2017.110.25(252102). Zhang, WeiHang; Xue, JunShuai; Zhang, Li; Zhang, Tao; Lin, ZhiYu; Zhang, JinCheng; Hao, Yue

42.High performance transient organic solar cells on biodegradable polyvinyl alcohol composite substrates

RSC ADVANCES,Vol.7,No.83,pp:52930-52937,2017. Xi, H; Chen, DZ; Lv, L; Zhong, P; Lin, ZH; Chang, JJ; Wang, H; Wang, B; Ma, XH; Zhang, CF

43.Temperature-dependence studies of organolead halide perovskite-based metal/semiconductor/metal photodetectors

RSC ADVANCES, 2017.7.33(20206-20211).Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Jia, Renxu

44.Investigation of Fe2+-incorporating organic-inorganic hybrid perovskites from first principles and experiments

RSC ADVANCES, 2017.7.86(54586-54593).Zhou, Long; Chang, Jingjing; Lin, Zhenhua; Zhang, Chunfu; Chen, Dazheng; Zhang, Jincheng;Hao, Yue

45.A Novel Silicon Allotrope in the Monoclinic Phase

MATERIALS,2017.10.4(441) .Bai, Chaogang; Chai, Changchun; Fan, Qingyang; Liu, Yuqian; Yang, Yintang

46.Effects of Annealing Conditions on Mixed Lead Halide Perovskite Solar Cells and Their Thermal Stability Investigation

MATERIALS,2017.10.7(837). Yang, Haifeng; Zhang, Jincheng; Zhang, Chunfu; Chang, Jingjing; Lin, Zhenhua; Chen, Dazheng; Xi, He; Hao, Yue

47.Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

MATERIALS ,2017.10.8(856). Zhao, Lu; Liu, Hongxia; Wang, Xing; Wang, Yongte; Wang, Shulong

48.Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

NANOSCALE RESEARCH LETTERS,2017.12 (198) .Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

49.Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

NANOSCALE RESEARCH LETTERS,2017.12 (108) .Zhao, Lu; Liu, Hong-xia; Wang, Xing; Fei, Chen-xi; Feng, Xing-yao; Wang, Yong-te

50.Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of LaxAlyO Nanolaminate Films Deposited by Atomic Layer Deposition

NANOSCALE RESEARCH LETTERS,2017.12(218). Fei, Chenxi; Liu, Hongxia; Wang, Xing; Zhao, Lu; Zhao, Dongdong; Feng, Xingyao

51.Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

NANOSCALE RESEARCH LETTERS,2017.12. Liu, Yan; Niu, Jiebin; Wang, Hongjuan; Han, Genquan; Zhang, Chunfu; Feng, Qian; Zhang, Jincheng; Hao, Yue

52.Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

NANOSCALE RESEARCH LETTERS,2017.12 (233) .Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

53.The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

NANOSCALE RESEARCH LETTERS,2017.12(524) .Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

54.The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

NANOSCALE RESEARCH LETTERS,2017.12(230) . Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

55.Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

APPLIED SURFACE SCIENCE, 2017.397 (175-182) . Jia, Yifan; Lv, Hongliang; Song, Qingwen; Tang, Xiaoyan; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

56.Unintentional doping effects in black phosphorus by native vacancies in h-BN supporting layer

APPLIED SURFACE SCIENCE,2017.402.(175-181) .    Zhu, Jiaduo; Zhang, Jincheng; Xu, Shengrui; Hao, Yue

57.Ab initio study of N-doped beta-Ga2O3 with intrinsic defects: the structural, electronic and optical properties

JOURNAL OF ALLOYS AND COMPOUNDS,2017.712.(379-385) .Dong, Linpeng; Jia, Renxu; Li, Chong; Xin, Bin; Zhang, Yuming

58.Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN

JOURNAL OF ALLOYS AND COMPOUNDS,2017.710(756-761).Chen, Zhibin; Zhang, Jincheng; Xu, Shengrui; Xue, Junshuai; Zhu, Jiaduo; Jiang, Teng; Hao, Yue

59.Ultrahigh frequency ZnO silicon lens ultrasonic transducer for cell-size microparticle manipulation

JOURNAL OF ALLOYS AND COMPOUNDS,2017.729.(556-562) .Fei, Chunlong; Hsu, Hsiu-Sheng; Vafanejad, Arash; Li, Ying; Lin, Pengfei; Li, Di; Yang, Yintang; Kim, EunSok; Shung, K. Kirk; Zhou, Qifa

60.A Compact High-Performance Programmable-Gain Analog Front End for HomePlug AV2 Communication in 0.18-mu m CMOS

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS,2017.64.11(2858-2870).Zhu, Zhangming; Wang, Jingyu

61.A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study

IEEE ELECTRON DEVICE LETTERS,2017.38.6(794-797) .Cao, Zhen; Duan, Baoxing; Shi, Tongtong; Yuan, Song; Yang, Yintang

62.Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs

IEEE ELECTRON DEVICE LETTERS,2017.38.10(1500-1503) .Li, Jing; Zhou, Jiuren; Han, Genquan; Liu, Yan; Peng, Yue; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

63.Diamond Field Effect Transistors With MoO3 Gate Dielectric

IEEE ELECTRON DEVICE LETTERS,2017.38.6(786-789) .Ren, Zeyang; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Xu, Shengrui; Li, Yao; Hao, Yue

64.Enhanced g(m) and f(T) With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

IEEE ELECTRON DEVICE LETTERS,2017.38.11(1563-1566).Yang, Ling; Mi, Minhan; Hou, Bin; Zhang, Hengshuang; Zhu, Jiejie; Zhu, Qing; Lu, Yang; Zhang, Meng; He, Yunlong; Chen, Lixiang; Zhou, Xiaowei; Lv, Ling; Ma, Xiaohua; Hao, Yue

65.Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

IEEE ELECTRON DEVICE LETTERS,2017.38.10(1421-1424). He, Yunlong; Mi, Minhan; Wang, Chong; Zheng, Xuefeng; Zhang, Meng; Zhang, Hengshuang; Wu, Ji; Yang, Ling; Zhang, Peng; Ma, Xiaohua; Hao, Yue

66.Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

IEEE ELECTRON DEVICE LETTERS,2017.38.8(1157-1160).Zhou, Jiuren; Han, Genquan; Peng, Yue; Liu, Yan; Zhang, Jincheng; Sun, Qing-Qing; Zhang, David Wei; Hao, Yue

67.Hardening of Split-Gate Power UMOSFET Against High-Power Microwave Radiation

IEEE ELECTRON DEVICE LETTERS,2017.38.8(1067-1070) .Fang, Jun-Peng; Wang, Ying; Hao, Yue; Liu, Jun; Sun, Ling-Ling

68.Polycrystalline Diamond MOSFET With MoO3 Gate Dielectric and Passivation Layer

IEEE ELECTRON DEVICE LETTERS,2017.38.9(1302-1304).Ren, Zeyang; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Chen, Dazheng; Yang, Pengzhi; Li, Yao; Hao, Yue

69.Reduced Miller Capacitance in U-Shaped Channel Tunneling FET by Introducing Heterogeneous Gate Dielectric

IEEE ELECTRON DEVICE LETTERS,2017.38.3(403-406). Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng

70.Substrate Integrated Waveguide Structural Transmission Line and Filter on Silicon Carbide Substrate

IEEE ELECTRON DEVICE LETTERS,2017.38.9(1290-1293) .Li, Yang; Yang, Lin-An; Zou, Hao; Zhang, Heng-Shuang; Ma, Xiao-Hua; Hao, Yue

71.(AlGa)(2)O-3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity

OPTICAL MATERIALS EXPRESS,2017.7.4(1240-1248). Feng, Qian; Li, Xiang; Han, Genquan; Huang, Lu; Li, Fuguo; Tang, Weihua; Zhang, Jincheng; Hao, Yue

72.4H-SiC Trench IGBT With Back-Side n-p-n Collector for Low Turn-OFF Loss

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.2 (488-493).Liu, Yan-Juan; Wang, Ying; Hao, Yue; Yu, Cheng-Hao; Cao, Fei

73.A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.11(4575-4580) .Liu, Yan-Juan; Wang, Ying; Hao, Yue; Fang, Jun-Peng; Shan, Chan; Cao, Fei

74.Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.3(840-847).Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Hou, Bin; Yang, Ling; Zhou, Xiaowei; Ma, Xiaohua; Hao, Yue

75.Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.10(4057-4064) .Yang, Ling; Mi, Minhan; Hou, Bin; Zhu, Jiejie; Zhang, Meng; He, Yunlong; Lu, Yang; Zhu, Qing; Zhou, Xiaowei; Lv, Ling; Cao, Yanrong; Ma, Xiaohua; Hao, Yue

76.Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.4(1541-1547).Wang, Yibo; Han, Genquan; Liu, Yan; Zhang, Chunfu; Feng, Qian; Zhang, Jincheng; Hao, Yue

77.Simulation Study of 4H-SiC UMOSFET Structure With p(+)-polySi/SiC Shielded Region

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.9(3719-3724). Wang, Ying; Ma, Ya-Chao; Hao, Yue; Hu, Yue; Wang, Gaofeng; Cao, Fei

78.Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.3(1343-1349) .Chen, Shupeng; Wang, Shulong; Liu, Hongxia; Li, Wei; Wang, Qianqiong; Wang, Xing

79.Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.12(4838-4843) .Zhou, Jiuren; Han, Genquan; Li, Jing; Peng, Yue; Liu, Yan; Zhang, Jincheng; Sun, Qing-Qing;Zhang, David Wei; Hao, Yue

80.Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.12(4875-4881). Mi, Minhan; Ma, Xiao-Hua; Yang, Ling; Lu, Yang;Hou, Bin; Zhu, Jiejie;Zhang, Meng; Zhang, Heng-Shuang; Zhu, Qing; Yang, Lin-An;Hao, Yue

81.Performance Enhancement in Uniaxially Strained Germanium-Tin FinTFET: Fin Direction Dependence

IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.64.7(2804-2811). Wang, Hongjuan; Liu, Yan; Han, Genquan; Shao, Yao; Zhang, Chunfu; Feng, Qian; Zhang, Jincheng; Hao, Yue

82.TCAD Simulation of Breakdown-Enhanced AlGaN-/GaN-Based MISFET With Electrode-Connected p-i-n Diode in Buffer Layer

IEEE Transactions on Electron Devices,2017(1-6). Xin Luo;Ying Wang;Yue Hao;Fei Cao;Cheng-Hao Yu;Xin-Xing Fei

83.Dielectric properties of Al-doped Ti3SiC2 as a novel microwave absorbing material

CERAMICS INTERNATIONAL,2017.43.1(222-227).Li, Zhimin; Yang, Zi; Zhang, Maolin; Yan, Yangxi; Huang, Yunxia; Hao, Yue

84.Improving microwave dielectric properties of Ca0.6La0.8/3(Sn0.02Ti0.98)O-3 ceramics by CeO2 addition

CERAMICS INTERNATIONAL,2017.43.2(2899-2902). Li, Zhimin; Yan, Yangxi; Zhang, Maolin; Hao, Yue

85.Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

JOURNAL OF PHYSICS D-APPLIED PHYSICS,2017.50.47(475101). Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Jia, Renxu

86.Low Temperature Aqueous Solution-Processed ZnO and Polyethylenimine Ethoxylated Cathode Buffer Bilayer for High Performance Flexible Inverted Organic Solar Cells

ENERGIES.2017.10.4 (494). You, Hailong; Zhang, Junchi; Zhang, Zeyulin; Zhang, Chunfu; Lin, Zhenhua; Chang, Jingjing; Han, Genquan; Zhang, Jincheng; Lu, Gang; Hao, Yue

87.A new superhard carbon allotrope: tetragonal C-64

JOURNAL OF MATERIALS SCIENCE,2017.52.5(2385-2391). Wei, Qun; Zhang, Quan; Yan, Haiyan; Zhang, Meiguang

88.Prediction of stable ground-state and pressure-induced phase transition of molybdenum monosulfide

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2017.226.(114-119).Wei, Qun; Zhang, Quan; Yan, Haiyan; Zhang, Meiguang; Shi, Xiaofeng; Zhu, Xuanmin

89.Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

APPLIED PHYSICS EXPRESS,2017.10.5 (56502). He, Yunlong; Wang, Chong; Mi, Minhan; Zhang, Meng; Zhu, Qing; Zhang, Peng; Wu, Ji; Zhang, Hengshuang; Zheng, Xuefeng; Yang, Ling; Duan, Xiaoling; Ma, Xiaohua; Hao, Yu

90.Study on temperature effect on properties of ZnO/MgZnO based quantum cascade detector in mid-infrared region

APPLIED PHYSICS EXPRESS,2017.10.1(11101). He, Jingfang; Wang, Ping; Chen, Hongyan; Guo, Xinlu; Guo, Lixin; Yang, Yintang

91.Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AIN nucleation layer

MATERIALS RESEARCH BULLETIN,2017.89.(193-196). Chen, Zhibin; Zhang, Jincheng; Xu, Shengrui; Xue, Junshuai; Jiang, Teng; Hao, Yue

92.Monovacancy paramagnetism in neutron-irradiated graphite probed by C-13 NMR

JOURNAL OF PHYSICS-CONDENSED MATTER,2017.29.46(465801).   Zhang, Z. T.; Xu, C.; Dmytriieva, D.; Molatta, S.; Wosnitza, J.; Wang, Y. T.; Helm, M.; Zhou, Shengqiang; Kuehne, H.

93.Ultrathin Corrugated Metallic Strips for Ultrawideband Surface Wave Trapping at Terahertz Frequencies

IEEE PHOTONICS JOURNAL,2017.9.1 (5500308). Liu, Yan; Fang, Cizhe; Han, Genquan; Shao, Yao; Huang, Yan; Wang, Hongjuan; Wang, Yibo; Zhang, Chunfu; Hao, Yue

94.Absorption Enhancement for Black Phosphorus Active Layer Based on Plasmonic Nanocavity

IEEE Photonics Journal,2017(1) .Cizhe Fang;Yan Liu;Genquan Han;Yao Shao;Yan Huang;Jincheng Zhang;Yue Hao 95.Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures

IEEE Photonics Journal,2017.9.4(1-8). Lu Huang;Qian Feng;Genquan Han;Fuguo Li;Xiang Li;Liwei Fang;Xiangyu Xing;Jincheng Zhang;Yue Hao

96.Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si3N4 Liner Stressor

IEEE Photonics Journal,2017(1). Yan Liu;Cizhe Fang;Xi Gao;Genquan Han;Qingfang Zhang;Yao Shao;Jincheng Zhang;Yue Hao

97.Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices

SEMICONDUCTOR SCIENCE AND TECHNOLOGY,Vol,32.No.12 (125015).Yuan, L; Song, QW; Tang, XY; Zhang, YM; Guo, LX; Zhang, YM; Zhang, YM

98.Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017.32.10 Wang, Dong; Ning, Jing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

99.A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

SUPERLATTICES AND MICROSTRUCTURES,2017.106(8-19). Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

100.A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications

SUPERLATTICES AND MICROSTRUCTURES,2017.101(315-322).Jia, Hujun; Luo, Yehui; Zhang, Hang; Xing, Ding; Ma, Peimiao

101.A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

SUPERLATTICES AND MICROSTRUCTURES,Vol.111,pp: 841-851.Jia, HJ; Luo, YH; Wu, QY; Yang, YT

102.Analog/RF performance of two tunnel FETs with symmetric structures

SUPERLATTICES AND MICROSTRUCTURES, Vol. 111,pp: 568-573. Chen, SP; Liu, HX; Wang, SL; Li, W; Wang, QQ

103.Electrical Modeling and Analysis of Cu-CNT Heterogeneous Coaxial Through-Silicon Vias

IEEE TRANSACTIONS ON NANOTECHNOLOGY,2017.16.4(695-702). Lu, Qijun; Zhu, Zhangming; Yang, Yintang; Ding, Ruixue; Li, Yuejin

104.Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs

SUPERLATTICES AND MICROSTRUCTURES,2017.102(127-133) .Yuan Lei; Song Qingwen; Tang Xiaoyan; Zhang Yimeng; Yang Shuai; Zhang Yimen; Guo Lixin; Xiao Li; Wang Liangyong; Zhang Yuming

105.New superjuction LDMOS with surface and bulk electric field modulation by buffered step doping and multi floating buried layers

SUPERLATTICES AND MICROSTRUCTURES,Vol.111,pp: 221-229.Cao, Z; Duan, BX; Yuan, S; Shi, TT; Yang, YT

106.Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire

SUPERLATTICES AND MICROSTRUCTURES,2017.104 (162-166). Jiang, Teng; Lin, Zhiyu; Zhang, Jincheng; Xu, Shengrui; Huang, Jun; Niu, Mutong; Gao, Xiaodong; Guo, Lixin; Hao, Yue

107.Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

SUPERLATTICES AND MICROSTRUCTURES,2017.102(7-16). Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

108.Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

SUPERLATTICES AND MICROSTRUCTURES,2017.106(139-146) .Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

109.Effect of graded InGaN drain region and 'In' fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

SUPERLATTICES AND MICROSTRUCTURES,2017.112(671-679). Duan, Xiaoling; Zhang, Jincheng;Wang, Shulong; Quan, Rudai;Hao, Yue

110.Experimental investigation of the Contact Resistance of Graphene/MoS2 interface treated with O Plasma

SUPERLATTICES AND MICROSTRUCTURES,Qin Lu, Yan Liu, Genquan Han, Cizhe Fang, Yao Shao, Jincheng Zhang, and Yue Hao

111.Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes

SUPERLATTICES AND MICROSTRUCTURES,2017.112(105-110). Wang, Yingzhe; Zheng, Xuefeng; Dai, Feng; Zhu, Jiaduo; Li, Peixian; Ma, Xiaohua; Hao, Yue

112.一种AlGaN/GaN HEMT非线性器件模型参数提取的方法/A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction

电子与信息学报,2017.39.12(1009-5896). CHANG Yongming;MAO Wei;DU Lin;HAO Yue

113.Elastic anisotropy and thermodynamic properties of superhard c-C3N under pressure

DIAMOND AND RELATED MATERIALS,2017.74 (132-137). Zhang, Quan; Wei, Qun; Yan, Haiyan; Zhu, Xuanmin; Shi, Xiaofeng; Zhang, Junqin

114.The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC

JOURNAL OF APPLIED PHYSICS,2017.121.13 (133904) .Peng, B.; Zhang, Y. M.; Dong, L. P.; Wang, Y. T.; Jia, R. X.

115.Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular Waveguide

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,2017.27.8(706-708).Li, Yang; Yang, Lin-An; Du, Lin; Zhang, Kunzhe; Hao, Yue

116.Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,2017.27.7(618-620). Liu, Xiaoxian; Zhu, Zhangming; Yang, Yintang; Ding, Ruixue; Li, Yuejin

117.High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,2017.27.8(721-723). Qu, Chenbing; Ding, Ruixue; Zhu, Zhangming

118.A 30-W 90% Efficiency Dual-Mode Controlled DC-DC Controller With Power Over Ethernet Interface for Power Device

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,2017.25.6 (1943-1953). Li, Yongyuan; Zhu, Zhangming

119.Modeling and Optimization of Multiground TSVs for Signals Shield in 3-D ICs

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY,2017.59.2(461-467). Qu, Chenbing; Ding, Ruixue; Liu, Xiaoxian; Zhu, Zhangming

120.Band alignments of La (x) Al (y) O films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017.28.6 (4702-4705).Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng

121.Band alignments of O-3-based and H2O-based amorphous LaAlO3 films on silicon by atomic layer deposition

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017.28.1(803-807).Zhao, Lu; Liu, Hongxia; Wang, Xing; Feng, Xingyao; Fei, Chenxi

122.Interfacial thermal stability and band alignment of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017.28.15(11253-11259). Fan, Jibin; Liu, Hongxia; Li, Donglin; Wang, Shulong; Duan, Li; Yu, Xiaochen

123.The influence of La/Al atomic ratio on the dielectric constant and band-gap of stack-gate La-Al-O/SiO2 structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017.28.2(2004-2008) .Wang, Shulong; Liu, Hongxia; Zhang, Hailin

124.1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f(T)/f(max) of 41/125 GHz

APPLIED PHYSICS EXPRESS,2017.10.7(76501). Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

125.A 58-ppm/degrees C 40-nW BGR at Supply From 0.5 V for Energy Harvesting IoT Devices

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2017.64.7(752-756).Mu, Junchao; Liu, Lianxi; Zhu, Zhangming; Yang, Yintang

126.Experimental study on an evaporation process to deposit MoO2 microflakes

CHEMICAL PHYSICS LETTERS,2017.687(14-18) .Guo, Yaohui; Zhao, Qiyi; Zhan, Yongjie; Xu, Xinlong; Xie, Yong

127.Complexity-enhanced polarization-resolved chaos in a ring network of mutually coupled vertical-cavity surface-emitting lasers with multiple delays

APPLIED OPTICS,2017.56.24(6728-6734). Zhang, Hao; Xiang, Shuiying; Zhang, Yahui; Guo, Xingxing

128.Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

INTERNATIONAL JOURNAL OF PHOTOENERGY,2017(1043264).Wang, Zhizhe; Chen, Dazheng; Zhang, Chunfu; Lin, Zhenhua; Liu, Yan; Han, Genquan; Chang, Jingjing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

129.Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5%

INTERNATIONAL JOURNAL OF PHOTOENERGY,2017(3192197) .Zhang, Chenxu; Zhang, Yuming; Guo, Hui; Zhang, Zeyulin; Zhang, Chunfu

130.A kinetics model for MOCVD deposition of AlN film based on Grove theory

JOURNAL OF CRYSTAL GROWTH,017.478(42-46).u, Kaiwen; Dai, Xianying; Miao, Dongming; Wu, Shujing; Zhao, Tianlong; Hao, Yue

131.High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence

JOURNAL OF CRYSTAL GROWTH,017.464(153-158). Xiao, Ming; Zhang, Jincheng; Hao, Yue

132.Influence of gamma-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

MICROELECTRONICS RELIABILITY,017.75(69-76).Hao, Min-Ru; Hu, Hui -Yong; Liao, Chen-Guang; Wang, Bin; Kang, Hai-Yan; Zhang, He-Ming

133.The collision frequency model of the solid state plasma for Si/Si1-xGex/Si SPiN device

SOLID STATE COMMUNICATIONS,2017.279(48-53).Kang, H. Y.; Hu, H. Y.; Wang, B.; Zhang, H. M.; Su, H.; Hao, M. R.

134.AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP ADVANCES,2017.7.9(95305).Liu, Xinke; Gu, Hong; Li, Kuilong; Guo, Lunchun; Zhu, Deliang; Lu, Youming; Wang, Jianfeng; Kuo, Hao-Chung; Liu, Zhihong; Liu, Wenjun; Chen, Lin; Fang, Jianping; Ang, Kah-Wee; Xu, Ke; Ao, Jin-Ping

135.First-principles study on mechanical and elastic properties of BxAl1-xP alloys

AIP ADVANCES,2017.7.6(65007).Ma, Huihui; Zhang, Junqin; Zhao, Bin; Wei, Qun; Yang, Yintang

136.Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

AIP ADVANCES,2017.7.12. Ren, Zeyang; Zhang, Jinfeng;Zhang, Jincheng;Zhang, Chunfu;Chen, Dazheng; Quan,Rudai; Yang, Jiayin; Lin, Zhiyu; Hao, Yue

137.Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

AIP ADVANCES,2017.7.10 (105109). Li, Yao; Zhang, Jinfeng; Liu, Guipeng; Quan, Rudai; Duan, Xiaoling; Zhang, Jincheng; Hao, Yue

138.A Fast-Settling Three-Stage Amplifier Using Regular Miller Plus Reversed Indirect Compensation

CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2017.36.2 (795-810) .Song, Cheng; Zhu, Zhangming; Yang, Yintang

139.CDS Circuit with High-Performance VGA Functionality and Its Design Procedure

CIRCUITS SYSTEMS AND SIGNAL PROCESSING,2017.36.5 (1781-1805).Zhuang, Haoyu; Zhu, Zhangming; Wang, Jingyu; Yang, Yintang

140.Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

SOLID-STATE ELECTRONICS,2017.129 (175-181).He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

141.Extraction method for parasitic capacitances and inductances of HEMT models

SOLID-STATE ELECTRONICS,2017.129.(108-113).Zhang, HengShuang; Ma, PeiJun; Lu, Yang; Zhao, BoChao; Zheng, JiaXin; Ma, XiaoHua; Hao, Yue

142.Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

SOLID-STATE ELECTRONICS,2017.129(114-119).Wang Chong; Zhao Meng-Di; He Yun-Long; Zheng Xue-Feng; Wei Xiao-Xiao; Mao Wei; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

143.Study on the influence of gamma-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET

SOLID-STATE ELECTRONICS,2017.133(45-52).Hao, Minru; Hu, Huiyong; Wang, Bin; Liao, Chenguang; Kang, Haiyan; Su, Han

144.A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2017.214.1(1600504).He, Yunlong; Zhai, Shaopeng; Mi, Minhan; Zhou, Xiaowei; Zheng, Xuefeng; Zhang, Meng; Zhang, Peng; Yang, Ling; Wang, Chong; Ma, Xiaohua; Hao, Yue

145.Electromechanical modeling of stretchable interconnects

JOURNAL OF COMPUTATIONAL ELECTRONICS,2017.16.1 (202-209).Dong, Ziming; Duan, Baoxing; Cao, Zhen; Yang, Yintang

146.Electric Crosstalk Effect in Valence Change Resistive Random Access Memory

JOURNAL OF ELECTRONIC MATERIALS,2017.46.8(5296-5302).Sun, Jing; Wang, Hong; Wu, Shiwei; Song, Fang; Wang, Zhan; Gao, Haixia; Ma, Xiaohua

147.Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio

JOURNAL OF ELECTRONIC MATERIALS,2017.46.2 (1088-1092).Jiang, Zhi; Zhuang, Yiqi; Li, Cong; Wang, Ping

148.Invariant object recognition based on combination of sparse DBN and SOM with temporal trace rule

MULTIMEDIA TOOLS AND APPLICATIONS,2017.76.9 (12017-12034).Cai, Huimin; Wang, Shulong; Liu, Eryun; Liu, Hongxia

149.A 130 GHz Electro-Optic Ring Modulator with Double-Layer Graphene

CRYSTALS,2017.7.3 (65).Wu, Lei; Liu, Hongxia; Li, Jiabin; Wang, Shulong; Qu, Sheng; Dong, Lu

150.Graphene-Hexagonal Boron Nitride Heterostructure as a Tunable Phonon-Plasmon Coupling System

CRYSTALS,2017.7.2(49).Qu, Sheng; Liu, Hongxia; Dong, Lu; Wu, Lei; Ma, Congcong; Wang, Shulong

151.Structure, electronic and mechanical properties of Ga1-xBxP alloys

PHYSICA B-CONDENSED MATTER,2017.521(295-304).Zhao, Bin; Zhang, Junqin; Ma, Huihui; Wei, Qun; Yang, Yintang

152.Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes

IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2017.64.1(643-647).Lv, Ling; Li, Peixian; Ma, Xiaohua; Liu, Linyue; Yang, Ling; Zhou, Xiaowei; Zhang, Jincheng; Cao, Yanrong; Bi, Zhen; Jiang, Teng; Zhu, Qing; Hao, Yue

153.Voltage-amplitude-controlled complementary and self-compliance bipolar resistive switching of slender filaments in Pt/HfO2/HfOx/Pt memory devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2017.35.3 (32203).Yang, Mei; Wang, Hong; Ma, Xiaohua; Gao, Haixia; Hao, Yue

154.具有p-GaN岛状埋层耐压结构的横向AlGaN/GaN高电子迁移率晶体管

High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications

物理学报ACTA PHYSICA SINICA,2017.66.24.Zhang Li;Lin Zhi-Yu;Luo Jun;Wang Shu-Long;Zhang Jin-Cheng;Hao Yue;Dai Yang;Chen Da-Zheng;Guo Li-Xin

155.A 0.3 V 8-bit 8.9 fJ/con.-step SAR ADC with sub-DAC merged switching for bio-sensors

MICROELECTRONICS JOURNAL,2017.68.(44-54).   Guo, Wei; Zhu, Zhangming

156.A 0.5-V 9.3-ENOB 68-nW 10-kS/s SAR ADC in 0.18-mu m CMOS for biomedical applications

MICROELECTRONICS JOURNAL,2017.59.(40-46).Bai, Wenbin; Zhu, Zhangming

157.A 0.6 V 31 nW 25 ppm/degrees C MOSFET-only sub-threshold voltage reference

MICROELECTRONICS JOURNAL,2017.66(25-30).Liang, Yuhua; Zhu, Zhangming

158.A 12-27 GHz SiGe BiCMOS VGA with phase shift variation compensation

MICROELECTRONICS

159.A 12-bit 200MS/s pipeline ADC with 91 mW power and 66 dB SNDR

MICROELECTRONICS JOURNAL,2017.63 (104-11).Liu, Maliang; Lian, Kaixiong; Huang, Yingzhou; Ma, Rui; Zhu, Zhangming

160.A current-reuse dual-channel bio-signal amplifier for WBAN nodes

MICROELECTRONICS

161.A dynamic task mapping algorithm for SDNoC

MICROELECTRONICS JOURNAL,2017.63(58-65).Zhou, Xiaofeng; Zhu, Zhangming

162.A fair arbitration for Network-on-Chip routing with odd-even turn model

MICROELECTRONICS JOURNAL,2017.64(1-8).Liu, Lu; Zhu, Zhangming; Zhou, Duan; Yang, Yintang

163.A low-noise programmable gain amplifier with fully balanced differential difference amplifier and class-AB output stage

MICROELECTRONICS JOURNAL,2017.64(86-91).Wang, Jingyu; Zhu, Zhangming; Liu, Shubin; Ding, Ruixue

164.An active dry electrode ecg interface circuit for wearable sensors

MICROELECTRONICS JOURNAL,卷: 69,页: 86-90 Yang, YT; Yang, Z; Zhu, ZM; Wang, JM

165.Analysis and optimal distribution scheme for SAR-VCO ADCs

MICROELECTRONICS JOURNAL,卷: 70,页: 81-88 Ding, RX; Liang, HZ; Liu, SB; Zhu, ZM

166.Design of linear dynamic range and high sensitivity matrix quadrant APDs ROIC for position sensitive detector application

MICROELECTRONICS JOURNAL,2017.63.(49-57).Zheng, Hao; Ma, Rui; Zhu, Zhangming

167.Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs)

MICROELECTRONICS JOURNAL,2017.63(20-26).Mei, Zheng; Dong, Gang; Yang, Yintang; Zheng, Junping; Chai, Jingrui; Zhu, Weijun

168.Symbol error rate performance analysis of soft-decision decoded MPPM free space optical system over exponentiated Weibull fading channels

CHINESE OPTICS LETTERS,2017.15.5(50602). Z hou, Duan; Cao, Tian; Yang, Yintang; Zhang, Jianxian; Wang, Ping; Yang, Bensheng

169.Design of 3D filtering antenna for the application of terahertz

ELECTRONICS LETTERS,2017.53.17.Li, Yang; Yang, Lin-an; Wang, Shao-bo; Du, Lin; Hao, Yue

170.Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

MATERIALS RESEARCH EXPRESS,2017.4.2(25902).Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

171.Preparation of nanoporous graphene sheets via free radical oxidation of graphene oxide and their application in lithium ion battery

MATERIALS RESEARCH EXPRESS,2017.4.7(75511).Zhou, Xuejiao; Xu, Liangyou; Ma, Xiaohua

172.Analog/RF performance of L- and U-shaped channel tunneling field-effect transistors and their application as digital inverters

JAPANESE JOURNAL OF APPLIED PHYSICS,2017.56.6(64102).Wang, Qianqiong; Wang, Shulong; Liu, Hongxia; Li, Wei; Chen, Shupeng

173.Characterization and mobility analysis of MoO3-gated diamond MOSFET

JAPANESE JOURNAL OF APPLIED PHYSICS,2017.56.10(100301).Zhang, Jin-feng; Ren, Ze-yang; Zhang, Jin-cheng; Zhang, Chun-fu; Chen, Da-zheng; Xu, Sheng-rui; Li, Yao; Hao, Yue

174.Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

JAPANESE JOURNAL OF APPLIED PHYSICS,2017.56.4 (04CD07).Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

175.The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure

JAPANESE JOURNAL OF APPLIED PHYSICS,2017.56.11(110305).Shan, Hengsheng; Chen, Bin; Li, Xiaoya; Lin, Zhiyu; Xu, Shengrui; Hao, Yue; Zhang, Jincheng

176.An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect

CHINESE PHYSICS B,2017.26.5 (58501) .Guan, He; Guo, Hui

177.Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuper junctions

CHINESE PHYSICS B,2017.26.4. (47306) Mao, Wei; Wang, Hai-Yong; Wang, Xiao-Fei; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

178.Improvement of the high-kappa/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

CHINESE PHYSICS B,2017.26.8(87701). Fan, Ji-Bin; Cheng, Xiao-Jiao; Liu, Hong-Xia; Wang, Shu-Long; Duan, Li

179.Influences of different oxidants on characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition

CHINESE PHYSICS B,2017.26.6(67701).Fan, Ji-Bin; Liu, Hong-Xia; Duan, Li; Zhang, Yan; Yu, Xiao-Chen

180.Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

CHINESE PHYSICS B,2017.26.2 (28501). Zhang, Yu-Hang; Chai, Chang-Chun; Yu, Xin-Hai; Yang, Yin-Tang; Liu, Yang; Fan, Qing-Yang; Shi, Chun-Lei

181.Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

CHINESE PHYSICS B,2017.26.1(17304).Yang, Ling; Zhou, Xiao-Wei; Ma, Xiao-Hua; Lv, Ling; Cao, Yan-Rong; Zhang, Jin-Cheng; Hao, Yue

182.Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

CHINESE PHYSICS B,2017.26.5 (58502). Zhang, Yu-Hang; Chai, Chang-Chun; Liu, Yang; Yang, Yin-Tang; Shi, Chun-Lei; Fan, Qing-Yang; Liu, Yu-Qian

183.Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment

CHINESE PHYSICS B,2017.26.5 (57702).Fan, Ji-Bin; Liu, Hong-Xia; Sun, Bin; Duan, Li; Yu, Xiao-Chen

184.Semipolar (11(2)over-bar2) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

CHINESE PHYSICS B,2017.26.2(27801).Xu, Sheng-Rui; Zhao, Ying; Jiang, Ren-Yuan; Jiang, Teng; Ren, Ze-Yang; Zhang, Jin-Cheng; Hao, Yue

185.Stability, elastic anisotropy, and electronic properties of Ca2C3

CHINESE PHYSICS B,2017.26.6(66201),Zhang, Quan; Wei, Qun; Yan, Hai-Yan; Zhu, Xuan-Min; Zhang, Jun-Qin; Jia, Xiao-Fei; Yao, Rong-Hui

186.The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

CHINESE PHYSICS B,2017.26.8(88401). Zheng, Jia-Xin; Ma, Xiao-Hua; Lu, Yang; Zhao, Bo-Chao; Zhang, Heng-Shuang; Zhang, Meng; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

187.Theoretical prediction of new C-Si alloys in C2/m-20 structure

CHINESE PHYSICS B,2017.26.4(46101).Xu, Xiangyang; Chai, Changchun; Fan, Qingyang; Yang, Yintang

188.Physical Properties of C-Si Alloys in C2/m Structure

COMMUNICATIONS IN THEORETICAL PHYSICS,2017.68.2(259-268).Wang, Qian-Kun; Chai, Chang-Chun; Fan, Qing-Yang; Yang, Yin-Tang

189.Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

MICRO & NANO LETTERS,2017.12.10(763-766).Guo, Haijun; Duan, Baoxing; Xie, Shenlong; Yuan, Song; Yang, Yintang

190.Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

CHINESE PHYSICS LETTERS,2017.34.2 (27301). Zheng, Xue-Feng; Wang, Ao-Chen; Hou, Xiao-Hui; Wang, Ying-Zhe; Wen, Hao-Yu; Wang, Chong; Lu, Yang; Mao, Wei; Ma, Xiao-Hua; Hao, Yue

191.Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures

CHINESE PHYSICS LETTERS,2017.12(79-82).Li Zhang;Jin-Feng Zhang;Wei-Hang Zhang;Tao Zhang;Lei Xu;Jin-Cheng Zhang;Yue Hao

192.Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)

JOURNAL OF ADVANCED OXIDATION TECHNOLOGIES,2017.20.1(20160177). Liu, Li; Yang, Yin-Tang

193.Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

NUCLEAR SCIENCE AND TECHNIQUES,2017.28.10(151).Wang, Qian-Qiong; Liu, Hong-Xia; Wang, Shu-Long; Fei, Chen-Xi; Zhao, Dong-Dong; Chen, Shu-Peng; Chen, Wei

194.99.2% energy saving and high-linearity switching method for SAR ADCs

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,2017.91.1 (93-96).Zhang, Jin; Ding, Ruixue; Zhu, Zhangming

195.99.8% energy saving and 97.4% area reduction switching scheme for SAR ADCs

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,2017.92.3(477-482).Zhu, Donglin; Ding, Ruixue; Zhu, Zhangming

196.A linear and wide dynamic range transimpedance amplifier with adaptive gain control technique

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,2017.90.1(217-226).Zheng, Hao; Ma, Rui; Zhu, Zhangming

197.A novel switching scheme and area-saving architecture for SAR ADC

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,2017.91.1(149-154).Ding, Ruixue; Liang, Hongzhi; Liu, Shubin

198  High-speed single-channel SAR ADC with a novel control logic in 65 nm CMOS

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,2017.91.3(503-511) Wang, Tao; Zhu, Zhangming; Zhang, Liang; Yang, Yintang

199.Investigation of etching method for fabricating deep through holes on ultra-high resistivity silicon

Journal of Semiconductors,2017.38.5(110-114).Lin Du, Shengrui Xu, Ying Wang, Ling Lü, Jincheng Zhang, Yue Hao

200.一种改进的AlGaN/GaN HEMT全局直流模型/An Improved AlGaN/GaN HEMT Global Direct Current Model

微电子学MICROELECTRONICS,2017.47.3(416-419).CHANG Yongming;MAO Wei;HAO Yue

201.Elastic anisotropy and stability of Rh2B and RhB2 at high pressures

CHINESE JOURNAL OF PHYSICS,2017.55.5(1981-1987).Zhao, Chenyang; Wei, Qun; Yan, Haiyan; Zhu, Xuanmin; Li, Renxian; Zhang, Junqin

202.Thermodynamic, elastic, elastic anisotropy and minimum thermal conductivity of beta-GaN under high temperature

CHINESE JOURNAL OF PHYSICS,2017.55.2 (400-411).Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang

203.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

ACTA PHYSICA SINICA,2017.66.16(167301).Guo Hai-Jun; Duan Bao-Xing; Yuan Song; Xie Shen-Long; Yang Yin-Tang

204.Influence of gamma-ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor

ACTA PHYSICA SINICA,2017.66.7 (76101). Hao Min-Ru; Hu Hui-Yong; Liao Chen-Guang; Wang Bin; Zhao Xiao-Hong; Kang Hai-Yang; Su Han; Zhang He-Ming

205.Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer

ACTA PHYSICA SINICA,2017.66.7 (77302).Zhao Yi-Han; Duan Bao-Xing; Yuan Song; Lu Jian-Mei; Yang Yin-Tang

206.Characteristics of H-terminated single crystalline diamond field effect transistors

ACTA PHYSICA SINICA,2017.66.20.Ren Ze-Yang; Zhang Jin-Feng; Zhang Jin-Cheng; Xu Sheng-Rui; Zhang Chun-Fu; Quan Ru-Dai; Hao Yue

207.A Fault-Tolerant Deflection Routing for Network-on-Chip

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS,2017.26.31750037.Zhou, Xiaofeng; Liu, Lu; Zhu, Zhangming

208.A Near-Threshold Voltage Startup Monolithic Boost Converter with Adaptive Sleeping Time Control

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS,2017.26.4 (1750063).Liu, Lianxi; Zhou, Yiyang; Mu, Junchao; Liao, Xufeng; Zhu, Zhangming; Yang, Yintang

209.THE OPTICAL GAIN OF A Si-BASED LATTICE-MATCHED Si0.15Ge0.621Sn0.229/Si0.637Ge0.018Sn0.345 MQW LASER

JOURNAL OF RUSSIAN LASER RESEARCH,2017.38.1(76-83). Ma, Jinge; Zhang, Junqin; Jia, Xiaoxu; Yang, Yintang

210.A novel SEU hardened SRAM bit-cell design

IEICE ELECTRONICS EXPRESS,2017.14.12(20170413).Li, Tiehu; Yang, Yintang; Zhang, Junan; Liu, Jia

211.An efficient energy and thermal-aware mapping for regular network-on-chip

IEICE ELECTRONICS EXPRESS,2017.14.17(20170769).Xu, Changqing; Liu, Yi; Zhu, Zhangming; Yang, YinTang

212.Modeling and design of a compact wideband common-mode filter using internal coupling technique

IEICE ELECTRONICS EXPRESS,2017.14.2. (20161063).Yao, Yindi; Zeng, Zhibin; Xiang, Xin

213.Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

IEICE ELECTRONICS EXPRESS,2017.14.11(20170411).Hao, Minru; Hu, Huiyong; Liao, Chenguang; Kang, Haiyan; Su, Han; Zhang, Qian; Zhao, Yingbo

214.Two dimensional electrical conductivity model of the solid state plasma for SPiN device

IEICE ELECTRONICS EXPRESS,2017.14.2(20161041).Kang, Haiyan; Hu, Huiyong; Wang, Bin; Su, Han; Hao, Minru; Zhao, Yingbo

215.High Quality Transferable AlN Thin Film by PLD

Journal of Physics: Conference Series,2017.864.1(012011).Heng Li;Xiaoli Lu;Xin Li;JinCheng Zhang and Yue Hao

216.High-Performance Simple-Structured Planar Heterojunction Perovskite Solar Cells Achieved by Precursor Optimization

ACS Omega,2017.2.9(6250-6258).Kaixuan Wang;Zhenhua Lin;Jing Ma;Ziye Liu;Long Zhou;Jianhui Du;Dazheng Chen;Chunfu Zhang;Jingjing Chang;Yue Hao

217.Improved planar perovskite solar cells using the modified hole transporting layer and solvent annealing

Journal of Physics: Conference Series,2017.864.1(012008).Shangzheng Pang;Chunfu Zhang;Dazheng Chen and Yue Hao

218.Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction

IEEE International Reliability Physics Symposium Proceedings,2017(XT5.1-XT5.7).Duan, M.; Zhang, J.F.; Zhang, J.C.; Zhang, W. ; Ji, Z.; Benbakhti, B.; Zheng, X.F.; Hao, Y.; Vigar, D.; Adamu-Lema, F.; Chandra, V.; Aitken, R.; Kaczer, B.; Groeseneken, G.; Asenov, A.

219.Nitride Wide Bandgap Semiconductor Material and Electronic Devices

CRC Press Taylor&Francis Group,Yue Hao, Jinfeng Zhang, Jincheng Zhang

220.Self-Focused AIScN Film Ultrasound Transducer for Individual Cell Manipulation

ACS SENSORS,2017.2.1(172-177).Zhu, Benpeng; Fei, Chunlong; Wang, Chen; Zhu, Yuhang; Yang, Xiaofei; Zheng, Hairong; Zhou, Qifa; Shung, K. Kirk

221.Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure

Journal of Physics: Conference Series,2017.864.1012078.Ruizhi Peng; Chunfuzhang; Genquan Han and Yue Hao

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