您现在所在位置:首页 > 科学研究 / 论文著作
论文著作
2017年会议论文
作者:  文章来源:  发布时间:2017-12-31  阅读次数:26

2017年会议论文

1.Fabrication of AlGaN-channel high electron mobility transistors and their application in high voltage electronic devices

12届氮化物半导体国际会议,The European Materials Research Society,July 24-28;Strasbourg,France,薛军帅

2.A Low Power Read-Out Circuit with Frequency Accuracy of 0.2% for Capacitive and Resistive Sensors

2017 IEEE International Symposium on Circuits & SystemsISCAS 2017, May 28-31;Baltimore,America,汪坤

3.Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 mV/decade Swing and 110 mV Hysteresis at MHz

IEEE International Electron Devices Meeting2017, Dec. 2017,周久人

4.Growth of the High Quality Single Crystalline Diamond MOSFETs with MoO3 Dielectric

11th Conference on New Diamond and Nano Carbons,   May 28,任泽阳

5.Influence of the Built-in Electric Field Induced by Low Power Fluorine Plasma Implantation on the Reliability of AlGaN-GaN HEMTs

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),APR 02-06, 2017 ,杨凌

6.Hole trapping in the NBTI characteristic of SiC MOSFET

2017 International Conference on Silicon Carbide and Related Materials,Sep.17-22,Washington,America,何艳静

7.Study on NO Passivation on the Near Interface Electron and Hole Traps of N-type 4H-SiC MOS Capacitors by Ultraviolet Light

2017 International Conference on Silicon Carbide and Related Materials,Sep.17-22,Washington,America,贾一凡

8.Theoretical Investigation of Backgate-Biasing Effects on Ultrathin-Body GeSn Based Tunneling FET

IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S&E3S),   IEEE Electron Device Society,Oct.15-20,San Francisco,America,王洪娟

9.Analysis of Coupling Capacitance between TSV and Adjacent RDL Interconnections

The Leading International Components, Packaging, and Manufacturing Technology Symposium,Nov.20-22,Kyoto,Japan,梅征

10.Experimental investigation of the Contact Resistance of Graphene-MoS2 interface treated with O2 Plasma

2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22,Sendai,Japan,陆芹

11.Simulation Investigation of Strained Black Phosphorus p-n Photodetector for Middle Infrared Range

2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22,Sendai,Japan,张思清

12.Simulation Study of The Performance Enhancement in GeSn/SiGeSn Hetero Line Tunneling FET

2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22,Sendai,Japan,王洪娟

13.Novel Superjunction LDMOS with Multi-Floating Buried Layers

第二十九届国际功率半导体器件与集成电路研讨会(ISPSD,The IEEE Electron Devices Society,The institute of electrical engineers of Japan  May 28-June 1,Sapporo,Japan,曹震

14.Novel LDMOS with Assisted Deplete Substrate Layer Consist of Super Junction under the Drain

第二十九届国际功率半导体器件与集成电路研讨会(ISPSD,  The IEEE Electron Devices Society  The institute of electrical engineers of Japan     May28-June1,Sapporo,Japan,袁嵩

15.Wideband Modeling and Characterization of Coaxial-annular through-silicon via for 3-D Ics

IEEE Reliability / CPMT / ED Singapore Chapter,Dec.6-9,Singapore,梅征

16.Effective Layout Scheme of Power and Ground TSVs for More Reliable Power Delivery in 3-D Ics

IEEE Reliability / CPMT / ED Singapore Chapter  , Dec.6-9,Singapore      ,朱伟军

17.Investigation of the structural, anisotropic and electronic properties of β-Ga2O3 and α-Ga2O3 under pressures

The 2nd International Workshop on Gallium Oxide and Related Materials (IWGO 2017) Parma University Sep.12-15,Parma,Italy,董林鹏

18.An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs

2017国际第三代半导体论坛(IFWS,第三代半导体产业技术创新战略联盟,Nov.1-3,Beijing,China,张恒爽

19.Impact of Proton Irradiation with Different Fluences on AC and DC Characteristics of InP/InGaAs Heterostructure

2017 International Workshop on Reliability and Radiation Effects of Micro- and Nano-Electronic Devices,中科院微电子所,May.22-24,Chendu,China,赵小红

20.Design of Wideband and High Efficiency THz Yagi Antenna by Using Air Bridge Technology

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao, China,邹浩

21.Effect of reducing annealing temperature on the thermal stability of ohmic contacts to p-type 4H-SiC

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao,China,唐振禹

22.Electric parameter shift of 4H-SiC junction barrier Schottky diode under repetitive dynamic avalanche conditions

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao,China,唐冠男

23.Degradation Performance of 4H-SiC Power JBS Didodes under reverse voltage stress

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao,China,孙秋杰

24.An innovative Si doping 3D Ni(OH)2/graphene electrode for high-performance asymmetric supercapacitor

2017 International symposium on single crystal diamond and electronics,西安交通大学,June.10-14,Xi’an,China,冯欣

25.First-principles study of the band structure and optical properties of Ga2O3

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao,China,王洪娟

26.基于第一性原理对锗铅(GePb)合金能带结构的分析

21届全国半导体物理学术会议(SPC),中国物理学会半导体物理专业委员会/中科院半导体所/南京大学 July.20-21,Nanjing.China,刘梦

27.锗沟道鳍型晶体管(FinFET)声子散射限制的电子迁移率研究

21届全国半 导体物理学术会议(SPC),中国物理学会半导体物理专业委员会/中科院半导体所/南京大学 July.20-21,Nanjing.China,敬莹

28.Revisiting Piezoelectric FETs with sub-Thermal Swing

The 5th Berkeley Symposium on Energy Efficient Electronic Systems &Steep Transistors Workshop,Oct. 19-20 2017 王洪娟

29.Simulation Study of Scaling Laws in N Polar GaN HENTs

The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27,Qingdao,China,陈万娇

 打印本页 关闭窗口  
© 2013- 西安电子科技大学宽带隙半导体国家重点实验室 版权所有
地    址:西安市太白南路2号
电    话:86-029-88202073  传    真:029-88202073-616
E_mail:pjma@xidian.edu.cn
邮    编:710071
Design & Support 技术支持:新势力网络
西安电子科技大学微电子学院  /  西安电子科技大学科学研究院  /
宽禁带半导体材料教育部重点实验室  /
中科院上海微系统与信息所  /  清华大学信息科学技术学院  /
中科院半导体所  /  西安中为光电科技公司  /
中科院微电子所  /
北京大学微电子院  /