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2016年刊物论文
作者:  文章来源:  发布时间:2016-12-29  阅读次数:27

2016年刊物论文(103篇)

1.Mixed-solvent-vapor annealing of perovskite for photovoltaic device efficiency enhancement

Nano Energy, Vol. 28, pp: 417–425,2016.     Sun, Xu;Zhang, Chunfu; Chang, Jingjing; Yang, Haifeng; Xi, He ; Lu, Gang ; Chen, Dazheng; Lin, Zhenhua; Lu, Xiaoli; Zhang, Jincheng ; Hao, Yue

2.Boosting the performance of planar heterojunction perovskite solar cell by controlling the precursor purity of perovskite material

Journal of Materials Chemistry A, Vol.4, No.3, pp: 887–893,2016.   Chang, Jingjing; Zhu, Hai; Li, Bichen; Isikgor, Furkan Halis; Hao, Yue; Xu, Qinghua; Ouyang, Jianyong

3.Enhancing the Photovoltaic Performance of Planar Heterojunction Perovskite Solar Cells by Doping the Perovskite Layer with Alkali Metal Ions

Journal of Materials Chemistry A, Vol. 4, No. 42, pp: 16546-16552,2016. Jingjing Chang, Zhenhua Lin, Hai Zhu, Furkan Halis Isikgor, Qing-Hua Xu, Chunfu Zhang, Yue Hao, Jianyong Ouyang

4.Enhancing the planar heterojunction perovskite solar cell performance through tuning the precursor ratio

Journal of Materials Chemistry A, Vol. 4, No. 20, pp: 7943-7949,2016.Jingjing Chang, Hai Zhu, Juanxiu Xiao, Furkan Halis Isikgor, Zhenhua Lin,Yue Hao,Kaiyang Zeng, Qing-Hua Xuc and Jianyong Ouyang

5.Elucidating the charge carrier transport and extraction in planar heterojunction perovskite solar cells by Kelvin probe force microscopy

Journal of Materials Chemistry A, Vol. 4, No. 44, pp: 17464-17472,2016.Jingjing Chang,Juanxiu Xiao,Zhenhua Lin, Hai Zhu, Qing-Hua Xu, Kaiyang Zeng,Yue Hao, Jianyong Ouyang

6.High-Mobility Ambipolar Organic Thin-Film Transistor Processed From a Nonchlorinated Solvent

ACS Applied Materials & Interfaces, Vol: 8, No. 37, pp: 24325-24330,2016.    Prashant Sonar, Jingjing Chang, Jae H. Kim, Kok-Haw Ong, Eliot Gann,Sergei Manzhos, Jishan Wu, and Christopher R McNeill

7.Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

Scientific Reports, Vol.6-19955,2016.Teng Jiang, Sheng-rui Xu*, Jin-cheng Zhang, Yong Xie & Yue Hao1

8.Low temperature aqueous solution-processed Li doped ZnO buffer layers for high performance inverted organic solar cells

Journal of Materials Chemistry C, Vol. 4, No. 25, pp: 6169-6175,2016.    Zhenhua Lin, Jingjing Chang, Chunfu Zhang, Jincheng Zhang, Jishan Wub ;Yue Hao

9.Interface studies of the planar heterojunction perovskite solar cells

Solar Energy Materials and Solar Cells, Vol.15, pp: 783-790,2016.   Zhenhua Lin, JingjingChang, JuanxiuXiao, HaiZhu, Qing-HuaXu, ChunfuZhang, JianyongOuyang, YueHao

10.Two novel silicon phases with direct band gaps

PHYSICAL CHEMISTRY CHEMICAL PHYSICS,Vol,18.No.18,pp:12905-12913,2016. Fan, Qingyang; Chai,Changchun;Wei, Qun; Yang, Yintang

11.Effect of polyelectrolyte interlayer on efficiency and stability of p-i-n perovskite solar cells

Solar Energy, Vol. 139, pp: 190–198,2016.Haifeng Yang, Jincheng Zhang, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Dazheng Chen, Xu Sun, He Xi, Genquan Han, Yue Hao

12.Investigation of SiC trench MOSFET with floating islands

IET Power Electronics, Vol.9, No.13,pp:2492-2499,2016.Qingwen, Song; Xiaoyan, Tang; Yimeng, Zhang; Yuming, Zhang; Yimen, Zhang

13.Controlling aggregation and crystallization of solution processed diketopyrrolopyrrole based polymer for high performance thin film transistors by pre-metered slot die coating process

Organic Electronics, Vol. 36, pp:113-119,2016. Jingjing Chang, Prashant Sonar, Zhenhua Lin, Chunfu Zhang, Jie Zhang, Yue Hao, Jishan Wu

14.Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Materials, Vol. 9, No. 9,pp. 743-1~10,2016.Hu, Jichao; Jia, Renxu; Xin, Bin; Peng, Bo; Wang, Yuehu; Zhang, Yuming

15.Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Applied Physics Letters, Vol.108, No.1, pp:013508,2016.JunShuai Xue, JinCheng Zhang, Yue Hao

16.Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate

OPTICAL MATERIALS EXPRESS,Vol.6,No.6,pp:1817-1826,2016.Teng Jiang, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang,Zeyang Ren, Mengdi Fu, Jiaduo Zhu, Hengsheng Shan, Ying Zhao, and Yue Hao

17.Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC

Journal of Physics D: Applied Physics, Vol.49, No.33,pp:335305,2016.     Xin, Bin; Jia, Ren-Xu; Hu, Ji-Chao; Zhang, Yu-Ming

18.Two Novel C3N4 Phases: Structural, Mechanical and Electronic Properties

MATERIALS,Vol.9,No.6( 427),2016. Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang

19.The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide

MATERIALS,Vol.9,No. 5(333),2016.Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang

20.Si96: A New Silicon Allotrope with Interesting Physical Properties

MATERIALS, Vol.9,No. 5(284),2016.Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang

21.Impacts of annealing conditions on the flat band voltage of alternate La2O3/Al2O3 multilayer stack structures.

Nanoscale Research Letters, 11:394-399, 2016.Feng, Xingyao; Liu, Hongxia

22.Preparation of few-layer graphene on on-axis 4H-SiC (000 1) substrates using a modified SiC-stacked method

Materials Letters, Vol.164, No.2, pp:655-658,2016.     Hu, Yanfei; Zhang, Yuming; Guo, Hui; Chong, LaiYuan; Zhang, Yimen

23.Comparison Study of beta-Ga2O3 Photodetectors on Bulk Substrate and Sapphire

IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.63, No.9, pp:3578-3583,2016.Feng Qian,Huang Lu ,Han Genquan,Li Fuguo ,Li Xiang, Fang Liwei, Xing Xiangyu ,Zhang Jincheng, Mu Wenxiang ,Jia Zhitai, Guo Daoyou, Tang Weihua, Tao Xutang, Hao Yue

24.Anisotropy effects on the performance of wurtzite GaN impact-ionization-avalanche-transit-time diodes

Applied Physics Express, 9(10), 111004,2016.     Yang Dai, Lin’an Yang*, Shengrui Xu, and Yue Hao

25.Prediction of novel phase of silicon and Si-Ge alloys

JOURNAL OF SOLID STATE CHEMISTRY,Vol.233,pp:471-483,2016. Fan, Qingyang; Chai, Changchun; Wei, Qun ; Yang, Yintang; Yang, Qi ; Chen, Pengyuan; Xing, Mengjiang; Zhang, Junqin; Yao, Ronghui

26.Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

Materials Science in Semiconductor Processing, 48, 9-13,2016.Chen, Yu-Hai; Liu, Hong-Xia; Xu, Han-Chen-Xi; Wang, Shu-Long; Fan, Xiao-Jiao; Zhao, Lu; Feng, Xing-Yao

27.Mechanical and electronic properties of Si, Ge and their alloys in P4(2)/mnm structure

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,Vol.43,pp:187-195,2016. Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Qi; Zhou, Peikun; Xing, Mengjiang; Yang, Yintang

28.Theoretical Analyses of Complete 3-D Reduced Surface Field LDMOS With Folded-Substrate Breaking Limit of Superjunction LDMOS

IEEE Transactions on Electron Devices, Vol.63,No.12,pp:4865-4872,2016.Zhen Cao, Baoxing Duan, Hai Cai,Song Yuan, Yintang Yang

29.Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Oxand Hf0.5Al0.5Oxon N-GaAs

Superlattices and Microstructures, Vol. 99, No. 11,pp:58-61,2016.Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang

30.High temperature characterization of normally-on 4H-SiC junction field-effect transistor

Superlattices and Microstructures, Vol. 99, No.11,pp:113-117,2016. Zhang, Yimeng; Tang, Meiyan; Song, Qingwen; Tang, Xiaoyan; Lv, Hongliang; Liu, Sicheng

31.Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands

Superlattices and Microstructures, Vol.99, No.11, pp:62-66,2016.Song, Qingwen; Tang, Xiaoyan; Tian, Ruiyan; Zhang, Yimeng; Guo, Tao; Tang, Guannan

32.Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Superlattices and Microstructures,Vol.99, No.11 pp:54-57, 2016. Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

33.Study of drain induced barrier lowering (DIBL) effect and subthreshold characteristics of fully-depleted Ge NMOS with P-substrate

Superlattices and Microstructures,Vol.100,pp:1230-1237,2016. Xiangyu Liu, Huiyong Hu, Heming Zhang, BinWang, Jiayin Yang, Genquan Han

34.New Al0.25Ga0.75N/GaN High Electron Mobility Transistor with Partial Etched AlGaN Layer

Superlattices and Microstructures, Vol.93, No.5, pp:303-307,2016.Yuan, Song, Duan Baoxing, Yuan Xiaoning, Cao Zhen, Guo Haijun, Yang Yintang

35.Analytical Model of LDMOS with a Single Step Buried Oxide Layer

Superlattices and Microstructures, Vol.97, No.9, pp:358-370,2016.Yuan, Song, Duan Baoxing, Cao Zhen, Guo Haijun, Yang Yintang

36.A novel 4H-SiC MESFET with double upper gate and recessed p-buffer

Superlattices and Microstructures, 97,346-352,2016.Hujun Jia; Peimiao Ma;Yehui Luo; Zhihui Yang; Zhijiao Wang,;   Qiuyuan Wu; Mei Hu

37.Analog/RF performance of four different tunneling fets with the recessed channels.

Superlattices and Microstructures, (100):1238-1248,2016. Li, Wei; Liu, Hongxia ; Wang, Shulong; Chen, Shupeng

38.Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Journal of Applied Physics, 119(16), 164501,2016.     Lin'an Yang, Yue Li, Ying Wang, Shengrui Xu, and Yue Hao

39.The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess layer

Semiconductor Science and Technology, 31(2), 025001,2016.Ying Wang, Lin'an Yang, Zhizhe Wang, Jinping Ao, and Yue Hao

40.Energy relaxation of hot electrons in III-N bulk materials

Semiconductor Science and Technology, 31(2):025016,2016.Yao Li, Jinfeng Zhang*, Jincheng Zhang, Zhizhe Wang, Wei Mao and Yue Hao

41.An analytical model of low field and high field electron mobility in wurtzite indium nitride.

Journal of Materials Science:Materials in Electronics,27:11353-11357,2016.Wang, Shulong; Liu, Hongxia; Chen, Qing

42.The influence of La/Al atomic ratio on the dielectric constant and band-gap of stack-gate La-Al-O/SiO2 structure.

Journal of Materials Science:Materials in Electronics, 27:5757-5761,2016.Wang, Shulong; Liu, Hongxia;Zhang, Hailin

43.Band alignments of O3-based and H2O-based amorphous LaAlO3films on silicon by atomic layer deposition

Journal of Materials Science: Materials in Electronics, (10):5593-5597,2016.Zhao, Lu; Liu, Hongxia; Wang, Xing; Feng, Xingyao; Fei, Chenxi1

44.Band alignments of LaxAlyO films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios

Journal of Materials Science: Materials in Electronics, (10):6111,2016.Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng

45.Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition

Journal of Materials Science:Materials in Electronics, 27:8550-8558,2016.Fei, Chenxi; Liu, Hongxia; Wang, Xin

46.Growth of thickness-controlled epitaxial graphene on on-axis 6H-SiC (C-face) substrate in graphite enclosure

Journal of Materials Science: Materials in Electronics, Vol. 27, No.6,pp:6242-6248,2016.Hu, Yanfei; Zhang, Yuming;      Guo, Hui; Chong, Laiyuan; Zhang, Chenxu; Zhang, Yimen

47.Effects of substrate on the domains and electrical properties of epitaxial graphene formed on on-axis C-face 4H-SiC

Journal of Materials Science: Materials in Electronics, Vol. 27, No.7,pp:7595-7602,2016.Hu, Yanfei; Zhang, Yuming;      Guo, Hui; Chong, LaiYuan;Zhang, Chenxu; Zhang, Yimen

48.Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

Thin Solid Films,Vol.619, No. 11, pp:48-52, 2016.Jin, Chengji; Lu, Hongliang; Zhang; Guan, He; Li, Zheng; Zhang, Yuming

49.Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of b-Ga2O3 films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.34, No.6,pp:060602-1~5,2016. Dong, Linpeng; Jia, Renxu; Xin, Bin; Zhang, Yuming

50.Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 34, No.3,pp:4947601,2016.Xin, Bin; Zhang, Yu-Ming; Wu, Hong-Ming; Feng, Zhe Chuan; Lin, Hao-Hsiung; Jia, Ren-Xu

51.Simulation of displacement damage in nanoscale MOSFET caused by galactic cosmic rays.

Journal of Computational and Theoretical Nanoscience, 13(8):5242-5245,2016.Zhao, Dongdong; Liu, Hongxia; Wang, Qianqiong; Wang, Shulong; Fei, Chenxi; Chen, Shupeng

52.The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Physica Status Solidi A, 213(5), 1252-1258,2016.Ying Wang, Lin-An Yang*, Zhi-Zhe Wang, Jin-Ping Ao, and Yue Hao

53.Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate

AIP ADVANCES,Vol,6.No.3,( 035316)2016.Jiang, T ; Xu, SR; Zhang, JC; Li, PX; Huang, J ; Ren, ZY ; Zhu, JD; Chen, ZB; Zhao, Y; Hao, Y

54.Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer.

AIP advances. 6(6):065224,2016.Wang, Xing; Liu, Hongxia ;Fei, Chenxi; Zhao, Lu; Chen, Shupeng ; Wang, Shulong

55.The performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate.

AIP advances, 6(11):21583226,2016.Wang, Shulong; Liu, Hongxia;Chen, Yuhai;Zhang, Hailin

56.Elastic anisotropy and electronic properties of Si3N4 under pressures

AIP ADVANCES, 6(8): 085207,2016.Fan, Qingyang; Chai, Changchun; Wei, Qun; Zhou, Peikun; Yang, Yintang

57.Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

AIP Advances, 6(5), 055301,2016.Yang Dai, Lin'an Yang, Qing Chen, Ying Wang, and Yue Hao

58.Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

Solid-State Electronics, Vol.123, No.9, pp:106-110,2016.Chengji Jin, Hongliang Lu , Yimen Zhang, Yuming Zhang, He Guan, Lifan Wu, Bin Lu, Chen Liu

59.Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Solid-State Electronics,2016(12)Wang Chong , Zhao Meng-Di, He Yun-Long, Zheng Xue-Feng, Wei Xiao-Xiao, Mao Wei, Ma Xiao-Hua,Zhang Jin-Cheng, Hao Yue

60.Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

Applied Physics A, 122(6):578,2016.Wang, Shulong; Liu, Hongxia; Zhang, Hailin

61.Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn2n+ 4H–SiC impact avalanche transit time diodes

Applied Physics A, 122(6), 536-1-7,2016.Qing Chen, Lin'an Yang, Shulong Wang, and Yue Hao

62.Current mapping of nonpolar alpha-plane and polar c-plane GaN films by conductive atomic force microscopy

Journal of Crystal Growth, Vol.451,pp:13-17,2016. Shengrui Xu, TengJiang , ZhiyuLin , YingZhao, LinanYang , JinchengZhang , PeixianLi , YueHao

63.Analytical threshold voltage model for strained silicon GAA-TFET

Chinese Physics B, Vol.25, No.11, pp:118501,2016.Hai-Yan Kang†, Hui-Yong Hu, and Bin Wang

64.Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

Chinese Physics B, Vol. 25, No. 9, pp:097101-1~5,2016.Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

65.Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Chinese Physics B,Vol. 25, No. 10, pp. 108101-1~ 108101-5 ,2016.Li-Fan Wu, Yu-Ming Zhang, Hong-Liang Lv, and Yi-Men Zhang

66.Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Chinese Physics B, Vol. 25, No. 4048503,2016.Xiao-Wen Xi, Chang-Chun Chai, Gang Zhao , Yin-Tang Yang, Xin-Hai Yu, and Yang Liu

67.Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Chinese Physics B , Vol. 25, No. 8,088504,2016.Xiao-Wen Xi, Chang-Chun Chai, Yang Liu, Yin-Tang Yang, Qing-Yang Fan,  Chun-Lei Shi

68.Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Chinese Physics B ,Vol,25.No. 4, 048504,2016.Liu, Yang;Chai, Chang-Chun; Yang, Yin-Tang ;Sun, Jing ;Li, Zhi-Peng

69.Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

Chinese Physics B, Vol.25, No.10,2016.Chong Wang, Meng-Di Zhao, Yun-Long He,Xue-Feng Zheng, Kun Zhang, Xiao-Xiao Wei, Wei Mao,Xiao-Hua Ma, Jin-Cheng Zhang,Yue Hao

70.Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

Chinese Physics B, Vol.25, No.11,2016.Yun-Long He, Chong Wang, Min-Han Mi, Xue-Feng Zheng, Meng Zhang, Meng-Di Zhao, Heng-Shuang Zhang, Li-Xiang Chen,Jin-Cheng Zhang, Xiao-Hua Ma, and Yue Hao

71.Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs.

Chinese Physics B, 25(3):038502,2016.Xin, Yanhui; Yuan, Sheng; Liu, Mingtang; Liu, HongXia;Yuan, He-cai

72.Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method.

Chinese Physics B, 25(2):027702,2016.Fan, JiBin; Ding, XiaoFu; Liu, HongXia;Xie, Peng-Fei;Zhang, Yuan-Tao;Liao, Qing-Liang

73.Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition

Chin. Phys. B.2016.5:058106Fei, Chen-Xi; Liu, Hong-Xia; Wang, Xing; Zhao, Dong-Dong; Wang, Shu-Long; Chen, Shu-Peng

74.Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

物理学报,2016.65(16):168502汤华莲,许蓓蕾,庄奕琪,张丽,李聪

75.Analytical Model of LDMOS with a Double Step Buried Oxide Layer

SOLID-STATE ELECTRONICS, Vol.123, No.9, pp:6-142016.Yuan, Song, Duan Baoxing, Cao Zhen, Guo Haijun, Yang Yintang

76.Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

International Journal of Photoenergy Volume, No.31, pp:1-7,2016.Chunfu Zhang, Shangzheng Pang, Ting Heng, Hailong You, Genquan Han, Gang Lu, Fengqin He,Qubo Jiang,Jincheng Zhang

77.Design and spectrum calculation of 4H-SiC thermal neutron detectors using FLUKA and TCAD

Nuclear Instruments and Methods in Physics Research, Vol. 833, No.10, pp:192-198,2016. Huang, Haili; Tang, Xiaoyan; Guo, Hui; Zhang, Yimen; Zhang, Yimeng; Zhang, Yuming

78.Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse

MICROELECTRONICS RELIABILITY,Vol.66,pp: 32-37,2016. Yang Liu , ChangChun Chai, QingYang Fan, ChunLei Shi, Xiaowen Xi, XinHai Yu, YingTang Yang

79.An Ultra-Low-Power Integrated RF Energy Harvesting System in 65-nm CMOS Process

Circuits, Systems & Signal Processing, Vol.35, No.2, pp:421-441,2016.    Lianxi Liu, Junchao Mu, Ning Ma, Wei Tu, Zhangming Zhu and Yintang Yang

80.Simple fault-tolerant method to balance load in network-on-chip

Electronics Letters,Vol. 52, No.10 pp:814-816     R. Xie, J. Cai and X. Xin

81.Efficient flexible inverted small-bandgap organic solar cells with low temperature zinc oxide interlayer

Japanese Journal of Applied Physics, Vol. 55, pp: 122302,2016.Hailong You, Junchi Zhang, Chunfu Zhang, Zhenhua Lin*, Dazheng Chen, Jingjing Chang, and Jincheng Zhang

82.(100) Si 基应变p 型金属氧化物半导体[110] 晶向电导率有效质量双椭球模型

物理学报, Vol.12, No.3, pp:213-224,2016.宋建军,包文涛,张静,唐昭焕,谭开洲,崔伟,胡辉勇,张鹤鸣

83.A New Phase of GaN

JOURNAL OF CHEMISTRY,文献号: 8612892.Fan, Qingyang; Chai, Changchun ; Wei, Qun; Yang, Jionghao; Zhou, Peikun; Zhang, Dongyun ; Yang, Yintang

84.An Active Voltage Doubling Rectifier with Unbalanced-Biased Comparators for Piezoelectric Energy Harvester

Journal of Power Electronics, Vol.16, No.3, pp:1226-1235,2016. Lianxi Liu, Junchao Mu, Wenzhi Yuan, Wei Tu, Zhangming Zhu, Yintang Yang

85.The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

Chinese Physics Letters,Vol.33,No.11,pp:1173012016. Feng Dai, Xue-Feng Zheng, Pei-Xian Li, Xiao-Hui Hou;Ying-Zhe Wang, Yan-Rong Cao, Xiao-Hua Ma, Yue Hao

86.Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer

CHINESE PHYSICS LETTERS,Vol.33,No.6,068102,2016. Xu, SR ; Zhao, Y ; Jiang, T ; Zhang, JC ; Li, PX ; Hao, Y

87.C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition

CHINESE PHYSICS LETTERS, Vol. 33, No. 12,128102,2016.Ying Zhao, Sheng-Rui Xu, Zhi-Yu Lin, Jin-Cheng Zhang, Teng Jiang,Meng-Di Fu, Jia-Duo Zhu, Qin Lu, Yue Hao

88.Structural, anisotropic and thermodynamic properties of boron carbide: First principles calculations

INDIAN JOURNAL OF PURE & APPLIED PHYSICS,Vol.54,No.4,pp: 227-235,2016.Fan, Qingyang; Wei, Qun; Chai, Changchun; Yan, Haiyan; Zhang, Meiguang; Zhang, Zixia; Zhang, Junqin; Zhang, Dongyun

89.New folding lateral double diffused metal oxide semiconductor breaking silicon limit with ultra-low specific on-resistance

Micro &Nano Letter, Vol.11, No.2, pp:99-101,2016. Baoxing Duan, Chunlai Li, Jianchong Ma, Song Yuan. Yintang Yang

90.Super junction LDMOS with step field oxide layer

Micro &Nano Letter, Vol.11, No.11,pp:666-669,2016. Zhen Cao, Baoxing Duan,Xiaoning Yuan, Song Yuan,Yintang Yang

91.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse

ACTA PHYSICA SINICA,Vol. 65,No. 3, 038402,2016.Liu Yang; Chai Chang-Chun; Yu Xin-Hai; Fan Qing-Yang; Yang Yin-Tang ; Xi Xiao-Wen ; Liu Sheng-Bei

92.The Elastic Anisotropic and Thermodynamic Properties of I4mm-B3C

ACTA PHYSICA POLONICA A Vol. 29,No. 1, pp:103-108,2016. Fan, Qingyang; Wei, Qun; Chai, Changchun; Yang, Yintang; Yu, Xinhai; Liu, Yang ; Zheng, Junping; Zhou, Peikun; Zhang, Dongyun

93.Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices.

Nuclear Science and Techniques, 27(5), 117-121,2016.Wang, Qian-Qiong; Liu, Hong-Xia ; Chen, Shu-Peng; Wang, Shu-Long ; Fei, Chen-Xi ; Zhao, Dong-Dong

94.Elastic and electronic properties of M585 carbon under pressure

CHINESE JOURNAL OF PHYSICS, Vol.54,No.3, pp:398-407,2016.Liang,Chaoxian;Chai,Changchun ; Fan,Qingyang ; Yang, Yintang ; Xing, Mengjiang

95.Mechanical and electronic properties of Si-Ge alloy in Cmmm structure

CHINESE JOURNAL OF PHYSICS,Vol.54,No.2,pp:298-307,2016.Zhang, Yuhang; Chai, Changchun ;Fan, Qingyang ;Yang, Yintang ; Xing, Mengjiang

96.Mechanical and electronic properties of C–Si alloys in P2221 structure

CHINESE JOURNAL OF PHYSICS,Vol.54.No.5,pp:700-710,2016.Tan, Lu,Chai, Changchun,Fan, Qingyang; Yang, Yintang

97.Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment

物理学报,Vol.22, No.6,2016.王冲,赵梦荻,裴九清,何云龙,李祥东,郑雪峰,毛维,马晓华,张进成,郝跃

98.A novel CMOS active polyphase filter with wideband and low-power for GNSS receiver

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