您现在所在位置:首页 > 科学研究 / 论文著作
论文著作
2015年会议论文
作者:  文章来源:  发布时间:2015-12-30  阅读次数:12

2015年会议论文

1.A Voltage Doubling AC-DC Converter with Offset-Controlled Comparators for Piezoelectric Energy Harvester

2015 IEEE 11th International Conference on ASIC, ASICON P1-43,Nov. 3-6, 2015, Chengdu,China

Lianxi Liu, Wei Tu, Junchao Mu, Zhangming Zhu, and Yintang Yang

2.Improved clival gate 4H-SiC MESFET with recessed drain drift region and recessed p-buffer layer

2015 International Conference on Electrical, Electronics and Mechatronics (ICEEM2015),Dec.20-21, 2015, Phuket, Thailand

Hujun Jia, Peimiao Ma, Yehui Luo, Ding Xing, Hang Zhang, Zhijiao Wang and Qiuyuan Wu

3.GaAs HEMT GaAs HEMT GaAs HEMT 低噪放的高功率微波效应研究

第十届全国高功率微波学术研讨会,Aguest 25-29, 2015, 中国呼和浩特

于新海,柴常春,赵刚,杨银堂,刘阳,陈自东

4.强电磁脉冲作用下GaN HEMT损伤效应研究

第十届全国高功率微波学术研讨会,Aguest 25-29, 2015, 中国呼和浩特

刘阳,柴常春,赵刚,于新海,杨银堂,席晓文

5.Simulation study on single event effects of FinFET devices

International Conference on Radiation Effects of Electronic Devices(ICREED-2015),Oral:C4,China,Harbin

吴振宇,徐富兵,刘毅,杨银堂

6.A new analytical model for junctionless cylindrical surrounding-gate MOSFETs

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014,

March 13,Chengdu,China

Li, Cong, Zhuang, Yiqi; Wang, Ping; Zhi, Jiang; Li, Zhang 

7.Analytical modeling for double-gate TFET with tri-material gate 

2014 IEEE 12th International Conference on  Solid-State and Integrated Circuits Technology, ICSICT 2014,

January 23, 2014,Guilin,China

Wang Ping, Zhuang Yiqi, Li Cong, Jiang Zhi

8.High Performance of 5.7kV 4H‐SiC JBSs with Optimized non‐uniform Field Limiting Rings Termination

International Conference on Silicon Carbide and Related Materials 2015.10.4~9,GiardiniNaxos,Italy.

Hao Yuan, Qingwen Song, Xiaoyan Tang, Yuming Zhang, Hui Guo, Yuehu Wang,Yimeng Zhang, Renxu Jia, Yimen Zhang

9.Study on Interface State Density of La2O3/SiO2 /4H‐SiC Stacking Gate Dielectric MOS Capacitors

International Conference on Silicon Carbide and Related Materials 2015.10.4~10,GiardiniNaxos,Italy,

Yucheng Wang, Yuming Zhang, Renxu Jia

10.Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using Atomic Layer  Deposition

The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors.

September 6~10, 2015.Suzhou, China

Bin Lu, Hongliang-Lv, Yuming-Zhang, Yimen-Zhang

11.Comparative Study of Atomic-Layer-Deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors

September 6~10, 2015.Suzhou, China

Xinjiang Yu, Hongliang Lv, Yuming Zhang, Yimen Zhang, Zaiyang Qin

12.High Temperature Characterization of Normally-on 4H-SiC Junction Field-effect

The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors

September 6~10, 2015.Suzhou, China

Tang Meiyan, Zhang Yimeng, Song Qingwen, Tang Xiaoyan, Lu Hongliang, Liu Sicheng

13.Investigation of the Novel 4H-SiC Trench MOSFET  with Non-uniform Doping Floating Island

The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors

September 6~10, 2015.Suzhou, China

Tian Ruiyan, Tang Xiaoyan, Song Qingwen, Zhang Yimeng and Guo Tao

14.Geometrical scaling Effects in InP/InGaAs Double Heterojunction Bipolar Transistor

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Min Liu, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou and Lifan Wu

15.The Influence of Proton Radiation on the Interface States in InPInGaAs Heterojunction Structure

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Li Chenghuan, Lu Hongliang, Zhang Yuming, Zhang Yimen and Liu Min`

16.A K-BAND LOW PHASE NOISE AND WIDE TUNING RANGE LC VCO

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Yan Ting, Zhang Yu-Ming, Lu Hong-Liang*, Zhang Yi-Men, and Wu Yue

17.ANALSIS OF THE THERMAL RESISTANCE AND PERFORMANCE DEGRATION OF 4H-SiC PiN POWER DIODE

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)

Li Jia-Chang, Song Qing-Wen, Zhang Yi-Meng, Tang Xiao-Yan, Zhang Yu-Ming

18.TI/AL/AU OHMIC CONTACTS TO P-TYPE 4H-SIC

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)

Chao Han, Yuming Zhang, Qingwen Song, Yimen Zhang, Xiaoyan Tang and Hui Guo

19.INFLUENCE OF THE THERMAL OXIDATION ON MINORITY CARRIER LIFETIME OF 6H-SiC

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)

Zhou Ting, Zhang Yu-Ming, Yuan Lei, Song Qing-Wen, Tang Xiao-Yan

20.4H-SiC TRENCH MOSFETS BASED ON MULTILAYER EPITAXIAL STRUCTURES

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)

Qingwen Song, Yuming Zhang, Yanjing He,Chao Han,Lei Yuan, Hao Yuan, Zhang Yimen, Xiaoyan Tang ,Hui Guo

21.Studies of growth technics and homogenous of Graphene formed on 4°off-axis 4H-Si-face SiC

2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)

Yanfei Hu, Yuming Zhang, Hui Guo    

22.Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics

2014European Conference on Silicon Carbide & Related Materials

Qingwen Song, Yuming Zhang,Xiaoyan Tang, Yuhu Wang, Hao Yuan, and Yimen Zhang

23.Improvement of current gain and breakdown voltage in 4H-SiC BJTs employing high-k dielectric as an interfacial layer

2014European Conference on Silicon Carbide & Related Materials

Lei Yuan, Yuming Zhang, Qingwen Song, Xiaoyan Tang and Yimen Zhang

24.Raman spectra and Strain Uniformity of Epitaxial Graphene grown on SiC(0001)

2014European Conference on Silicon Carbide & Related Materials

Yanfei Hu , Hui Guo , Yuming Zhang and Yimen Zhang

25.Low pressure homoepitaxial Growth of 4H-SiC on 4°off-axis substrates

2014European Conference on Silicon Carbide & Related Materials

Jichao Hu, Yuming Zhang, Renxu Jia, Yuehu Wang and Bin Xin

26.The modulation of the domain mode in GaN-based planar Gunn diode for terahertz applications

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Ying Wang, Lin-An Yang, Yang Li, and Yue Hao

27.Hyper-3D Porous Graphene for High Performance Mn3O4 Supercapacitors

The International Symposium on Physics and Device Application of Two-dimensional Materials

Jing Ning*, Dong Wang*, Jincheng Zhang, and Yue Hao   

28.High performance 3D Porous Graphene for High Performance Mn3O4 Supercapacitors

第十届国际华人纳米论坛

Jing Ning*, Dong Wang*, Jincheng Zhang, and Yue Hao   

29.Characterization of the b-Ga2O3 films grown by pulsed laser deposition

International workshop on Gallium oxide and Related Materials

冯倩,代波,李付国,谢文林,徐通,郝跃

30.Confinement and transport characteristics of high-density two-dimensionalelectron-gas in novel GaN-based heterostructures

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Jincheng Zhang and Yue Hao

31.Effects of cabon and oxygen impurities on the optical and electrical properties of polar-, semipolar- and nonpolar GaN epilayers

16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP),Sept. 2015 in Suzhou

Jincheng Zhang, Shengrui Xu, Zhiyu Lin, Jiaduo Zhu, Yue Hao

32.GaN-based novel heterostructures and electronic devices

7th Asia Pacific Workshop on Widegap Semiconductor, Seoul, Korea, May 17-20, 2015

Jincheng Zhang, Jiaduo Zhu and Yue Hao    

33.Novel GaN-based heterostructure materials and HEMT devices

2015 International Symposium on Single Crystal Diamond and Electronics (SCDE 2015),June 12-13, Xi'an, China

Jincheng Zhang*, Xue Junshuai, Jiaduo Zhu, Yue Hao

34.AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer  

11thInternational Workshop on Nitride Semiconductors(11-ICNS),Beijing, China, August 29-September 4, 2015

Xiangdong Li,Jincheng Zhang, Yu Zou, Zhenxing Guo, Weihang Zhang, Renyuan Jiang, Haiqing Jiang, Huijuan Wen, Yue Hao

35.Growth and characterization of epitaxial overgrown less-strained GaN bymonolayer silica microspheres mask

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Ming Xiao, Jincheng Zhang, Jianjun Ma, Kun Tian, Rudai Quan and Yue Hao

36.Growth Of High-Quality High-Al AlGaN Material On The Three-Dimensional GaN Islands Of Defect-Free

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Xiaoling Duan, Ming Xiao, Jincheng Zhang*, Jianjun Ma, Kun Tian and Yue Hao

37.Effect Of Gallium Source Flows On Morphology And Electrical Properties Of InAlGaN Barrier Layers Grown By Pulse Metal Organic Chemical Vapor Deposition

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Rudai Quan, Jincheng Zhang, Junshuai Xue, Yue Hao

38.Growth Of GaN Epilayer With High Performance By Adopting Sputtered AlN Nucleation Layer And In-Situ AlN Interlayer

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Zhibin Chen, Jincheng Zhang and Yue Hao

39.Growth Of High-Quality Ga-Rich AlGaN On GaN Islands Of Defect-Free

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Ming Xiao, Jincheng Zhang, Xiaoling Duan and Yue Hao

40.Raman Scattering Of Polar And Nonpolar GaN Nanowires By Metal Organic Chemical Vapor Deposition

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Teng Jiang, Jincheng Zhang, Shengrui Xu and Yue Hao

41.Energetics Of Oxygen Incorporation At AlN (0001) Surface With N-Type And P Type

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Jiaduo Zhu, Jincheng Zhang and Yue Hao

42.Demonstration Of InAlN/AlGaN High Electron Mobility Transistors With Enhanced Breakdown Voltage and Linearity By Pulsed Metal Organic Chemical Vapor Deposition

11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing

Junshuai Xue, Jincheng Zhang, and Yue Hao

43.GaN基半导体电子器件的进展与趋势(大会报告)

中国有色金属学会宽禁带半导体专业委员会首届学术研讨会,广东东莞,2015.12.11

张进成,郝跃

44.宽禁带半导体电子器件的若干进展(大会报告)

第一届全国宽禁带半导体学术与应用技术会议,2015年10月30日至11月2日.中国.苏州

张进成,郝跃

45.新型高压AlGaN 沟道器件研究新进展(特邀报告)

第一届全国宽禁带半导体学术与应用技术会议,2015年10月30日至11月2日.中国.苏州

张进成,郝跃

46.Relaxed Ge0.97Sn0.03 P-Channel Tunneling FETs with High Drive Current Fabricated on Si and Further Improvement Enabled by Uniaxial Tensile Strain

2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015

Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Jincheng Zhang, Xiaohua Ma, Buwen Cheng, and Yue Hao

47.Importance of growth pressure on achieving high quality InAlN/GaN heterostructures by pulsed metal organic chemical vapor deposition

The 6th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Hamamatsu, Japan

Junshuai Xue, Jincheng Zhang, and Yue Hao

48.Growth and fabrication of InAlN/AlGaN high electron mobility transistors with enhanced breakdown voltage and linearity

The 6th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Hamamatsu, Japan

Junshuai Xue, Jincheng Zhang, and Yue Hao

 打印本页 关闭窗口  
© 2013- 西安电子科技大学宽带隙半导体国家重点实验室 版权所有
地    址:西安市太白南路2号
电    话:86-029-88202073  传    真:029-88202073-616
E_mail:pjma@xidian.edu.cn
邮    编:710071
Design & Support 技术支持:新势力网络
西安电子科技大学微电子学院  /  西安电子科技大学科学研究院  /
宽禁带半导体材料教育部重点实验室  /
中科院上海微系统与信息所  /  清华大学信息科学技术学院  /
中科院半导体所  /  西安中为光电科技公司  /
中科院微电子所  /
北京大学微电子院  /