您现在所在位置:首页 > 科学研究 / 论文著作
论文著作
2013年刊物论文
作者:  文章来源:  发布时间:2013-12-25  阅读次数:15

2013年刊物论文

1.Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition.

Nano Letters,Vol.13, No.8,pp:3654-3657,2013.Xu Shengrui,  Hao Yue, Zhang Jincheng, Jiang Teng, Yang Linan, Lu Xiaoli, Lin Zhiyu.

2.Influence of the interface acceptor-like traps on the transient response of AlGaN/GaN HEMTs.

IEEE Electron Device Letters, Vol.34, No.1,pp:45-47,2013.    Zhang Wei, Zhang Yue, Mao Wei, Ma Xiaohua, Zhang Jincheng, HaoYue.

3.Two ESD Detection Circuits for 3xVDD-Tolerant I/O Buffer in Low-Voltage CMOS Processes With Low Leakage Currents.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 13(1): 319-321,2013. Liu, Hongxia; Yang, Zhaonian; Zhuo, Qingqing.

4.Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode.

IEEE Transactions on Electron Devices, Vol.60, No.5,pp:1600-1606,2013. Wang Ying, Yang Lin-An, Mao Wei, Long Shuang, Hao Yue.

5.Improvement of the Anneal-Induced Valence Band Offset Variation by the Hybrid Deposition of HfO2 on Si.  

IEEE Transactions on Electron Devices, 60(5): 1536-1539, 2013.Fan, Jibin; Liu, Hongxia; Ma, Fei.

6.Design and Analysis of the Reference Cells for STT-MRAM

IEICE Electronics Express, Vol.10, No.12, pp:1-6, 2013.Li ZHANG, Weisheng ZHAO, Yiqi ZHUANG, Junlin BAO, Hualian TANG, Cong LI and Xin Xiang

7.Performance analysis of single-walled carbon nanotube bundle interconnects for three-dimensional integration applications.

IET Micro & Nano Letters, Vol.8, No.1, pp:56-58,2013.Qian LiBo, Zhu ZhangMing, Ding RuiXue, Yang YinTang

8.A novel ESD power supply clamp circuit with double pull-down paths.

Sci. China Inf. Sci., 56(10):102401-8, 2013.Hongxia Liu, Zhaonian Yang,Li Li,Zhuo Qingqing

9.Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing.

ACTA PHYSICA SINICA, 62(17): 176106,2013.Zhuo Qing-Qing; Liu Hong-Xia; Wang Zhi.

10.Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's.

ACTA PHYSICA SINICA, 62(3): 036105, 2013.Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min.

11.Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo.

ACTA PHYSICA SINICA, 62(15) : 158502,2013. Xin Yan-Hui; Liu Hong-Xia; Fan Xiao-Jiao.

12.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor.

ACTA PHYSICA SINICA, 62(10):108501,2013.Xin Yan-Hui; Liu Hong-Xia; Fan Xiao-Jiao.

13.Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition.

ACTA PHYSICA SINICA, 62(3): 037701,2013. Zhang Xu-Jie; Liu Hong-Xia; Fan Xiao-Jiao.

14.Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing.

Appl. Phys. Express,6: 081302, 2013.XianYing Dai, ChenFeng Shao,Yue Hao

15.Effect of High-k Material on Gate Threshold Voltage for Double-Gate Tunnel FET.

Applied Mechanics and Materials, Vol.275-277,pp: 1984(4) ,2013.Yuchen Li, Heming Zhang, Huiyong Hu, Yuming Zhang,Bin Wang, Chunyu Zhou and Yongle Lou

16.Research on Accumulation PMOS Capacitors Based on Strained-Si/SiGe Material

Applied Mechanics and Materials, Vol.275-277,pp: 1968-1973(6), 2013.Bin Wang, Heming Zhang, Huiyong Hu, Yuming Zhang,Bin Shu, Chunyu Zhou, Yuchen Li

17.Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride.

Applied Physics A,112(4):933-938, 2013.Wang, Shulong; Liu, Hongxia; Fan, Jibin.

18.An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride.

Applied Physics A, 13:7798-9, 2013.Wang, Shulong; Liu Hongxia.

19.Identification the Optimal ALD Process Conditions of Nd2O3 on Si by Spectroscopy Ellipsometry.

Applied Physics A, 13:7611-9, 2013.Fan xiaojiao,Liu Hongxia,Zhang Xujie

20.Trap states in ALGaN channel high-electron mobility transistors.

Applied Physics Letters, Vol.103, No.21,pp:212106,2013.Zhao Shenglei, Zhang Kai, Ha Wei, Chen Yonghe, Zhang Peng, Zhang Jincheng, Ma Xiaohua, Hao Yue.

21.AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

CHINESE OPTICS LETTERS, Vol.11, No.10, pp:102304(1-3) ,2013.Junqin Zhang , Yintang Yang,Hujun Jia

22.Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition.

Chinese Physics B, 22(2): 027702,2013.Fan Ji-Bin; Liu Hong-Xia; Ma Fei,Zhuo Qingqing,Hao Yue

23.Hardening measures for bipolar transistor against microwave-induced damage

Chinese Physics B, Vol.22, No.6, pp:068502(5) ,2013.Chai Changchun, Ma Zhenyang, Ren Xingrong, Yang Yintang, Zhao Yingbo, Yu Xinhai

24.Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

Chinese Physics B, 22(2):028101, 2013.Wang Danghui, Xu Shengrui, Hao Yue, Zhang Jincheng, Xu Tianhan, Lin Zhiyu, Zhou Hao, XueXiaoyong.

25.Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors.

Chinese Physics B, 22(5):057304, 2013.Zhang Kai, Cao Mengyi, Chen Yonghe, Yang Liyuan, Wang Chong, Ma Xiaohua, Hao Yue.

26.AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

Chinese Physics B, 22(6):068503,2013.Wang Chong,  He Yunlong, Zheng Xuefeng, Ma Xiaohua, Zhang Jincheng, Hao Yue.

27.Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on a Ge substrate.

Chinese Physics B, 22(3) 037702,2013.Fan Ji-Bin; Liu Hong-Xia; Fei Cheng-Xi.,Ma Fei,Fan Xiaojiao,Hao Yue

28.Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET.

Chinese Physics B, 22(4):047304, 2013.Lei Xiao-Yi; Liu Hong-Xia; Zhang Kai,Zhang Yue,Zheng Xuefeng,Ma Xiaohua,Hao Yue

29.Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor.

Chinese Physics B,Vol.22, No.7, pp:076701-1~4, 2013.Liu Chen, Zhang Yu-Ming, Zhang Yi-Men, and Lv Hong-Liang

30.Low leakage 3xVDD-tolerant ESD detection circuit without deep N-well in a standard 90-nm low-voltage CMOS process.

SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 56(8): 2046-2051, 2013.Yang ZhaoNian; Liu HongXia; Wang ShuLong.

31.Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor Chinese Physics B,Vol.22, No.3, pp:038501(8), 2013.Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong,Wang Bin, Lou Yong-Le, and Zhou Chun-Yu

32.Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode.

Chinese Physics B, 22(8):087104,2013.Li Liang , Yang Lin-An, Zhou Xiaowei, Zhang Jincheng, Hao Yue.

33.InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate.

Dielectric CHINESE PHYSICS LETTERS, 30(5):058502, 2013.Mao Wei, Hao Yue, Yang Cui, Zhang Jincheng, Ma Xiaohua, Wang Chong, Liu Hongxia, Yang Lin'an, Zhang Jinfeng, Zheng Xuefeng

34.Effects of growth temperature on structural and electrical properties of InAlN/GaNheterostructures grown by pulsed metal organic chemical vapor deposition on c-plane sapphire.

Japanese Journal of Applied Physics, 52(8) PART 2, 2013.Xue JunShuai, Zhang JinCheng, Hao Yue.  

35.Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers.

Japanese Journal of Applied Physics, 52(11) :111001,2013.Zhang Kai, MiMinhan, Chen Yonghe, Cao Mengyi, Wang Chong, Ma Xiaohua, Zhang Jincheng, Hao Yue.

36.High-frequency Capacitance-voltage Characteristics of N-type Metal-oxide-semiconductor Capacitor Based on Strained-Si/SiGe Architecture.

Japanese Journal of Applied Physics, Vol.52,No.6,pp:064201(4) ,2013.Bin Wang, He-Ming Zhang, Hui-Yong Hu, Bin Shu, Yu-Ming Zhang, Jian-Jun Song

37.Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

JOURNAL OF ALLOYS AND COMPOUNDS, 555:311-314,2013. Wang Danghui, Hao Yue, Xu Shengrui, Xu Tianhan,Wang Dangchao,Yao Tingzhen,Zhang Yani

38.Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes - Theoretical investigation.

Journal of Applied Physics,Vol.113, No.19,pp:194509, 2013.Chen Haoran, Yang Lin'An, Long Shuang, Hao Yue

39.Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

Journal of Applied Physics, Vol.114, No.10,pp:104508,2013.Li Liang, Yang Lin’an, Zhang Jincheng, Hao Yue.

40.Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors.

Journal of Applied Physics, Vol.113, No.17,pp:174503, 2013.Zhang Kai,  Xue Junshuai, Cao Mengyi, Yang Liyuan, Chen Yonghe, Zhang Jincheng, Ma Xiaohua, Hao Yue.

41.Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET.

Journal of Central South University of Technology, Vol.20,No.9, pp:2366(6), 2013.Wang Bin, Zhang Heming, Zhang Yuming, Hu Huiyong, Zhang Yuming, Zhou Chunyu, Li Yuchen

42.Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer

Journal of Crystal Growth,387, No.1, pp.1-5, 2014.Li Liang, Yang Lin’an, Cao Rongtao, Xu Shengrui, Zhou Xiaowei, XueJunshuai, Lin Zhiyu, Ha Wei, Zhang Jincheng, Hao Yue.

43.Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition.    

Journal of Crystal Growth,384:96-99,2013.Lin Zhiyu, Zhang Jincheng, Cao Rongtao, Ha Wei, Zhang Shuai, Chen Xing, Yan Jingdong, Xu Shengrui, Zhao Yi, Li Liang, Hao Yue.

44.A novel interconnect optimal buffer insertion model considering the self-heating effect

Journal of Semiconductors, Vol.34, No.11,2013.Zhang Yan, Dong Gang, Yang Yintang, Wang Ning, Ding yaoshun, Liu Xiaoxian, Wang Fengjuan

45.Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique.

Materials and Manufacturing Processe, Vol.28, No.11,pp:1248-1252,2013.Shi Yonggui, Yang Xinghua , Wang Dong , Zhang Peng , Zhang Jincheng ,Hao Yue, Yang Jianfeng.

46.Improved L-gate 4H-SiC MESFETs with partial p-type spacer

Materials Science in Semiconductor Processing, Vol.16, No.2, pp:352-355,2013.Hujun Jia,Yintang Yang,Hu Zhang

47.Two-Dimensional Electrical Modeling of Thermoelectric Devices Considering Temperature-Dependent Parameters under the Condition of Nonuniform Substrate Temperature Distribution.

Microelectronics Journal, Vol.44, No.3,pp:270-276,2013.YinTang Yang, Ning Wang, Gang Dong, Yi Liu, Bin Chen, JunShuai Xue, HengSheng Shan, Yan Zhang.

48.Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3 gate dielectric.

Science China Technological Sciences, 56(3):629-632,2013.Feng Qian, Wang Qiang, Xing Tao, Li Qian, Hao Yue

49.Strain effects on valence bands of wurtzite ZnO  

Science China: Physics, Mechanics and Astronomy,, Vol.56, No.9, pp:1684-1688,2013.Qiao Liping, Chai ChangChun, Jin Zhao, Yang Yintang, Ma Zhenyang

50.Penetration Depth at Various Raman Excitation Wavelengths and Stress Model for Raman Spectrum in Biaxially-Strained Si

Science China: Physics, Mechanics and Astronomy, Vol.56, No.11, pp:2065(7) ,2013.Song Jian-Jun, Yang Chao, Hu Hui-Yong, Dai Xian-Ying, Wang Cheng,Zhang He-Ming

51.Analytical Model for Quasi-static C-V Characteristics of Strained-Si/SiGe pMOS Capacitor

Solid State Electronics, Vol.79, pp:258(4), 2013.Bin Wang, He-Ming Zhang, Hui-Yong Hu, Bin-Shu, Chun-Yu Zhou,Yu-Chen Li

52.Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor. 

物理学报, 62(16):167305,2013.Zhang Yue,  Zhuo Qingqing,  Liu Hongxia, Ma Xiaohua, Hao Yue.

53.不同调幅样式的高功率微波对双极晶体管的损伤效应和机理

物理学报, Vol.62, No.12, pp:128501(7) ,2013.马振洋, 柴常春, 任兴荣, 杨银堂, 乔丽萍, 史春蕾

54.应变SiGe pMOSFET栅电容特性研究

物理学报, Vol.62,No.12, pp:127102(7) ,2013.王斌, 张鹤鸣,胡辉勇,张玉明,宋建军,周春宇,李妤晨

55.应变Si NMOS积累区电容特性研究

物理学报, Vol.62,No.5, pp:057103(6) ,2013.王斌, 张鹤鸣,胡辉勇,张玉明,舒斌,周春宇,李妤晨,吕 懿.

56.异质多晶SiGe栅应变Si NMOSFET物理模型研究

物理学报, Vol.62,No.21, pp:218502(8) ,2013.王斌, 张鹤鸣, 胡辉勇, 张玉明, 宋建军, 周春宇, 李妤晨

57.应变Si NMOSFET 阈值电压集约物理模型

物理学报, Vol.62, No.7, pp:077103(8) ,2013.周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 舒斌, 王斌, 王冠宇

58.应变Si NMOSFET漏电流解析模型

物理学报, Vol.62, No.23, pp:237103(8) ,2013.周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 李妤晨

59.基极注入强电磁脉冲对双极晶体管的损伤效应和机理

物理学报, Vol.62, No.6, pp:068501(6) ,2013.任兴荣, 柴常春, 马振洋, 杨银堂, 乔丽萍, 史春蕾

60.基于深亚微米工艺的栅接地NMOS静电放电保护器件保护器件衬底电阻模型研究

物理学报, Vol.62, No.4,pp:047203,2013.吴晓鹏,杨银堂,高海霞,董刚,柴常春

61.Efficient “Light-soaking”- free Inverted Organic Solar Cells with Aqueous Solution Processed Low- Temperature ZnO Electron Extraction Layers.

ACS Applied Materials Interfaces,Vol.5, No.24,pp:13318-13324,2013. Wei Wei, Zhang Chunfu, Chen Dazheng, Wang Zhizhe, Zhu Chunxiang, Zhang Jincheng, Lu Xiaoli, Hao Yue.

62.AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient

CHIN. PHYS. LETT, 30(12) :127201,2013. Ha Wei, Zhang Jincheng, Zhao Shenglei, GeShasha,WenHuijuan, Zhang Chunfu, Ma Xiaohua, Hao Yue

63.The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET.

Chinese Physics B, Vol.22,No.2, pp:028503(6), 2013. Wang Bin, Zhang Heming, Hu Huiyong, Zhang Yuming, Zhou Chunyu, Wang Guanyu, Li Yuchen

64.An Ultrathin AlGaN Barrier Layer MIS-HEMT Structure for Enhancement-Mode Operation

CHINESE PHYSICS LETTERS, 30(2):028503 ,2013.Qan Si, Ma Xiaohua, Zheng Xue Feng, Hao Yue

65.Anisotropic low-field electron diffusion coefficient and mobility in wurtzite indium nitride

Physica Status Solidi B, 10:49085-8,2013.Shulong Wang, Hongxia Liu, and Zhaonian Yang

66.A low leakage power-rail ESD detection circuit with a modified RC network for a 90-nm CMOS process.

Journal of Semiconductors, 34(4):046010-5,2013. Zhaonian Yang, Hongxia Liu.

67.Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting

Materials Advanced Materials Research, Vol. 676 , pp: 8(5) ,2013. Meng Nan, Huiyong Hu, Heming Zhang, Xujia Shi, Rongxi Xuan, Wang bin

68.Vcm-based monotonic capacitor switching scheme for SAR ADC

IET Electronics Letters , Vol.49, No.5, pp:327-329,2013.Zhu ZhangMing, Xiao Yu, Song XiaoLi

69.Motion of current filaments in avalanching PIN diodes

Journal of Semiconductors, Vol.34, No.4, pp:044004(5) ,2013. Ren Xingrong, Chai Changchun, Ma Zhenyang,

Yang Yintang, Qiao Liping, Shi Chunlei, and Ren Lihua

70.A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

Journal of Semiconductors, 34(7):074005,2013. Yang Liyuan, Ai Shan, Chen Yonghe, Cao Mengyi, Zhang Kai, Ma Xiaohua, Hao Yue

71.First-principles calculation on the concentration of intrinsic defects in 4H-SiC

Journal of Semiconductors, Vol.34, No.1, pp:013002-1~4,2013. Cheng Ping, Zhang Yuming, and Zhang Yimen

72.An I/Q DAC with Gain Matching Circuit for Wireless Transmitter

Journal of Semiconductors, Vol.34, No.6,pp:065006,2013.Tang Hualian, Zhuang Yiqi, Jin Xin, Zhang Li

73.Optimization Methodology for the Number of Additions in Multiplier.

Journal of Xidian University,Vol. 40 (3): 102-108,2013.Yuanbo, Liu Hongxia.

74.Optimization Methodology for Width of Fixed-Point Decimal Multiplier.

Journal of Xidian University, 40 (5): 113-118,2013. Yuanbo, Liu Hongxia.

75.Novel silicon-controlled rectier (SCR) for digital and high-voltage ESD power supply clamp.

SCIENCE CHINA Information Sciences, Vol. 56,2013.Zhang Peng, Wang Yuan, Zhang Xing, Ma Xiaohua, Hao Yue.

76.Optimization of two-context MQ-encoder and implementation of VLSI architecture.

Tien Tzu Hsueh Pao/Acta Electronica Sinica, Vol.41, No.5, pp: 918-925,2013. Di Zhixiong, Shi Jiangyi, Liu Kai, Li Yunsong, Ma Peijun, Hao Yue.

77.一种高速低功耗的NoC 时钟网络设计

西安电子科技大学学报, Vol.40,No.3,pp:115(6),2013.刘毅,陈博,杨银堂,刘刚

78.电磁脉冲作用下二极管二次击穿电热特性

西安电子科技大学学报      , Vol.40, No.2, pp:45-52,2013.任兴荣, 柴常春, 马振洋, 杨银堂

79.CFD模拟RPCVD的正交法优化设计与分析

西安电子科技大学学报, 40(4):72-78  ,2013.戴显英,郭静静

80.一种新型无源UHF RFID带隙基准电路

西安电子科技大学学报, Vol.40, No.2, pp:148-152,2013.杜永乾,庄奕琪,李小明,景鑫,戴力

 打印本页 关闭窗口  
© 2013- 西安电子科技大学宽带隙半导体国家重点实验室 版权所有
地    址:西安市太白南路2号
电    话:86-029-88202073  传    真:029-88202073-616
E_mail:pjma@xidian.edu.cn
邮    编:710071
Design & Support 技术支持:新势力网络
西安电子科技大学微电子学院  /  西安电子科技大学科学研究院  /
宽禁带半导体材料教育部重点实验室  /
中科院上海微系统与信息所  /  清华大学信息科学技术学院  /
中科院半导体所  /  西安中为光电科技公司  /
中科院微电子所  /
北京大学微电子院  /