您现在所在位置:首页 > 科学研究 / 论文著作
论文著作
2012年刊物论文
作者:  文章来源:  发布时间:2012-12-30  阅读次数:129

2012年刊物论文

1.The impact of anneal on electromigration of copper interconnect and the optimized anneal technology study.

Advanced Materials Research, Vol.482-484 pp:1188-1191, 2012.Du Ming, Ma Peijun, Hao Yue

2.Model of Closed-loop Detection System for Capacitive MEMS Accelerometer and its IC Realization.

Advanced Materials Research, Vol. 468-471 pp:2170-2175 ,2012.Bin Wang, Heming Zhang, Huiyong Hu,Zhengyuan Zhang,Rongxi Xuan, Chunyu Zhou, Guanyu Wang, Yuming Zhang

3.A Low-Power High Linearity Gm-C Filter.

Applied Mechanics and Materials,Vol.109,pp: 266-270,2012.Huiyong Hu, Liu Sun, Heming Zhang ,Jianjun Song

4.Design and Implementation of High-Speed Dual-Modulus.

Applied Mechanics and Materials,Vol.109,pp: 271-275,2012.Jianjun Song, Liu Sun, Heming Zhang, Huiyong Hu

5.Generalized Early voltage model of bipolar transistors for linearly graded germanium in base

Applied Mechanics and Materials,Vol.110-116,pp: 3311-3315,2012.Xiaobo Xu, Heming Zhang, Huiyong Hu, Jianli Ma, Lijun Xu

6.An analytical model for the subthreshold current of fully depleted strained-SOI MOSFET.

Applied Mechanics and Materials,Vol.110-116,pp: 3332-3337,2012.Shanshan Qin, Heming Zhang, Huiyong Hu, Xiaoyan Wang, Guanyu Wang Jiangtao Qu

7.Analytical threshold voltage models for strained Si/strained Si1-xGex/relaxd Si1-yGey PMOSFET.

Applied Mechanics and Materials,Vol.110-116,pp: 5447-5451,2012.Shanshan Qin, Heming Zhang, Huiyong Hu, Xiaoyan Wang, Guanyu Wang Jiangtao Qu

8.Collector resistance of accumulation subcollector transistors for SOI SiGe BiCMOS technology.

Applied Mechanics and Materials,Vol.110-116, pp:5452-5456,2012.Xiaobo Xu, Heming Zhang, Huiyong Hu, Shanshan Qin, Jiangtao Qu

9.The impact of drain-induced barrier lowering effect on threshold voltage for small-scaled strained Si/SiGe nMOSFET.

Applied Mechanics and Materials,Vol.110-116,pp: 5457-5463,2012.Jiangtao Qu, Heming Zhang, Huiyong Hu, Xiaobo Xu, Wang Guan-Yu, Wang Xiao-Yan

10.Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

Applied Physics Letters, Vol,100, No.1, pp:013507(3) ,2012. Xue JunShuai, Zhang JinCheng, Hou YaoWei, Zhou Hao, Zhang JinFeng, HaoYue

11.Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

Applied Physics Letters,Vol.100, No.7, pp:072104(4) ,2012. Li Liang, Yang Lin'an, Zhang Jincheng, Xue Junshuai, Xu Shengrui, Lv Ling, Hao Yue, Niu Mutong

12.Field dependency of magnetoelectric coupling in multilayered nanocomposite arrays: Possible contribution from surface spins.

Applied Physics letters, Vol.101,No.22, pp:222902(4)  ,2012.Lu Xiaoli, Sining Dong, Li Xiaoguang, Marin Alexe, Dietrich Hesse, Hao Yue

13.Temperature dependences of Raman scattering in different types of GaN epilayers.

Chinese Physics B, Vol.21, No.2, pp:027803(5),2012.Xue Xiaoyong, Xu Shengrui, Zhang Jincheng, Lin Zhiyu, Ma Juncai, Liu Ziyang, Xue Junshuai, Hao Yue

14.Neutron irradiation effects on AlGaN/GaN high electron mobility transistors.

Chinese Physics B,Vol.21, No.3, pp:037104(5) ,2012.   Lv Ling, Zhang Jincheng, Xue Junshuai, Ma Xiaohua,Zhang Wei, Bi Zhiwei, Zhang Yue, Hao Yue

15.A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

Chinese Physics B,  Vol.21, No.5, pp: 057304(6),2012.Ma Fei, Liu Hongxia, Kuang Qianwei, and Fan Jibin

16.The influence and explanation of fringing-induced barrier lowering on sub-100nm MOSFETs with high-k gate dielectrics.

Chinese Physics B, Vol.21, No.5, pp: 057305(5),2012.Ma Fei, Liu Hongxia, Kuang Qianwei, and Fan Jibin

17.Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization.

Chinese Physics B, Vol.21, No.6, pp:067803(5) ,2012.  Zhou Xiaowei, Xu Shengrui, Zhang Jincheng, Dang Jiyuan, Lü Ling, Hao Yue, Guo Lixin

18.Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique.

Chinese Physics B,  Vol.21, No.7, pp:077304(3),2012.Yang Liyuan, Xue Xiaoyong, Zhang Kai, Zheng Xuefeng, Ma Xiaohua, Hao Yue

19.Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer.

Chinese Physics B, Vol.21, No.7, pp:077103(5),2012.Zhang Wei,  Xue Junshuai, Zhou Xiaowei, Zhang Yue, Liu Ziyang, Zhang Jincheng, Hao Yue

20.Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition.

Chinese Physics B, Vol.21,No.8, pp:087702(6) ,2012.   Fan Jibin, Liu Hongxia, Gao Bo, Ma Fei, Zhuo Qingqing, Hao Yue

21.Influence of double AlN buffer layers on the qualities of GaN films prepared by metal organic chemical vapour deposition.

Chinese Physics B, Vol.21, No.12, pp:126804(5),2012.Lin Zhiyu, Zhang Jincheng, Zhou Hao, Li Xiaogang, Meng Fanna, Zhang Linxia, Ai Shan, Xu Shengrui, Zhao Yi, Hao Yue

22.Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer.

Chinese Physics B, Vol.21, No.5,pp:057201(1-8),2012. Baoxing Duan, Yintang Yang

23.Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors.

Chinese Physics B, Vol. 21, No. 1, pp:017202,2012.Song Kun, Chai Chang-Chun, Yang Yin-Tang, Chen Bin, Zhang Xian-Jun, Ma Zhen-Yang

24.Effects of microwave pulse-width damage on a bipolar transistor.

Chinese Physics B, Vol. 21, No. 5, pp:058502,2012.Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Chen Bin, Zhao Ying-Bo

25.Microwave damage susceptibility trend of bipolar transistor as a function of frequency.

Chinese Physics B, Vol. 21, No. 9, pp:098502,2012. Ma Zhen-Yang, Chai Chang-Chun), Ren Xing-Rong, Yang Yin-Tang, Chen Bin, Song Kun, Zhao Ying-Bo

26.Temperature-dependent characteristics of 4H SiC junction barrier Schottky diodes.

Chinese Physics B, Vol. 21, No. 3,pp:037304-1-5,2012. Chen Feng-Ping, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Wang Yue-Hu, Chen Wen-Hao

27.A k (.) p analytical model for valence band of biaxial strained Ge on (001) Si1-xGex.

Chinese Physics B,  Vol.21, No.5,pp:0571031-7,2012. Wang Guan-Yu, Zhang He-Ming, Gao Xiang, Wang Bin, Zhou ChunYu

28.Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H SiC substrates.

Chinese Physics B,  Vol. 21, No. 3, pp:038102-1-4,2012.Wang Dang-Chao, Zhang Yu-Ming, Zhang Yi-Men, Lei Tian-Min, Guo Hui, Wang Yue-Hu

29.Investigation of 4H-SiC metal-insulation-semiconductor structure with Al2O3/SiO2 stacked dielectric.

Chinese Physics B,  Vol. 21, No. 8,, pp: 087701-1-4,2012. Tang Xiao-Yan, Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Jia Ren-Xu, Lü Hong-Liang, Wang Yue-Hu

30.Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer.

Chinese Physics B,  Vol. 21, No. 8, pp:088502-1-4,2012. Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen

31.Simulation study on 4H–SiC power devices with high-k dielectric FP terminations.

Diamond & Related Materials, Vol.22, pp.42~47,2012.Qing-Wen Song , Yu-Ming Zhang, Yi-Men Zhang, Xiao-Yan Tang:

32.A Development Summarization of the Power Semiconductor Devices II.

IETE Technical Review, Vol.29, No.1,pp:36-43,2012.  Baoxing Duan and Yintang Yang

33.The application of the electric field modulation and charge shielding effects to the High Voltage Si LDMOS.

IETE Technical Review, Vol.29, No.4,pp:276-281,2012. Baoxing Duan,Yintang Yang

34.Conduction Band Model of [110]/(001) Uniaxially Strained Si.

Japanese Journal of Applied Physics, Vol.51,No.10,pp:104301-4,2012. Song Jian-Jun, Yang Chao, Wang Guan-Yu, Zhou Chun-Yu, Wang Bing, Hu Hui-Yong, and Zhang He-Ming

35.Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN.

Journal of Applied Physics, Vol.111, No.1, pp:013711(7),2012. Wang Shulong, Liu Hongxia, Gao Bo, Fan Jibin, Kuang Qianwei

36.Transport characteristics of AlGaN/GaN/AlGaN Double Heterostructures with high electron mobility.

Journal of Applied Physics, Vol.112,No.02, pp:023707(6), 2012. Fanna Meng, Jincheng Zhang, Hao Zhou, Juncai Ma, Junshuai Xue, Lisha Dang, Linxia Zhang, Ming Lu, Shan Ai, Xiaogang Li, and Yue Hao

37.A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency.

Journal of Applied Physics, Vol.111,No.10,pp:104514(5),2012. Yang Lin'An,  Long, Shuang, Guo Xin, Hao Yue

38.Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications.

Journal of Applied Physics, Vol. 111, No.11, pp:114513(5) ,2012. Xue Junshuai, Zhang Jincheng, Zhang Kai, Zhao Yi, Zhang Linxia, Ma Xiaohua, Li Xiaogang, Meng, Fanna, Hao Yue

39.Effect of defects on strain state in nonpolar a-plane GaN.

Journal of Crystal Growth, Vol.343, No.1, pp:122-126,2012. Liu Ziyang, Xu Shengrui, Zhang Jincheng, Xue Junshuai, Xue Xiaoyong, Niu Mutong, Hao Yue

40.Investigation of Controlled Current Matching in Polymer Tandem Solar Cells Considering Different Layer Sequences and Optical Spacer

Journal of Xidian University, Vol.39, No.2, pp:164-167,2012. Wang zhizhe, Zhang Chunfu, Chen Dazheng, Zhang Jincheng, Feng Qian, Xu Shengrui, Zhou Xiaowei, Hao Yue

41.Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation.

Journal Wuhan University of Technology, Materials Science Edition, Vol.27, No. 3,  pp:415-417,2012. Jia Renxu, Zhang Yuming, Zhang Yimen

42.A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

Materials Science in Semiconductor Processing, Vol.15,No.1,pp:2-5,2012. Jia Hujun, Zhang Hu, Yang Yintang

43.New Al0.25Ga0.75N/GaN HEMTs structure with the partial silicon doping  .

Micro &Nano Letter, Vol.7, No.1,pp:9-11,2012.   Baoxing Duan, Yintang Yang

44.Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD.

Microelectronics Reliability  , Vol.52, No.6, pp:1043-1049,2012. Fan Jibin, Liu Hongxia, Kuang, Qianwei, Gao Bo, Ma Fei, Hao Yue

45.A novel co-design and evaluation methodology for ESD protection in RFIC.

Microelectronics Reliability, Vol.52, No.11, pp: 2632-2639,2012. Li Li, Liu Hongxia,Yang Zhaonian

46.The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors

Microelectronics Reliability, Vol. 52, No. 12, pp:2941-2947, 2012. Zhang Jincan; Zhang, Yuming; Lu, Hongliang, Zhang, Yimen; Yang, Shi

47.Proton irradiation effects on HVPE GaN.

Science China Technological Sciences, Vol.55, No.9, pp:2432-2435,2012. Lü Ling, Hao Yue, Zheng Xuefeng, Zhang Jincheng, Xu Shengrui, Lin Zhiyu, Ai Shan, Meng Fanna

48.Atomic layer deposited high-k HfxAl(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors  .

Science China Technological Sciences, Vol.55, No.3,pp:606–609,2012.Song QingWen, Zhang YuMing, Zhang YiMen, Tang XiaoYan and Jia RenXu

49.The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

SCIENCE CHINA: Physics, Mechanics & Astronomy, Vol.55, No.1, pp:40-43,2012. Bi Zhiwei, Feng Qian, Zhang Jincheng, Lv Ling, Mao Wei, Gu Wenping, Ma Xiaohua, Hao Yue

50.Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate. 

SCIENCE CHINA: Physics, Mechanics & Astronomy, Vol.55, No.12, pp:2383-2388,2012.Wang Danghui, Zhou Hao, Zhang Jincheng, Xu Shengrui, Zhang Linxia, Meng Fanna, Ai Shan, Hao Yue.

51.Hole Mobility Enhancement of Si by Rhombohedral Strain.

Science in China, Series G: Physics Mechanics and Astronomy, Vol.55,No.8,pp:1399-1403,2012. SONG JianJun, ZHANG HeMing, HU HuiYong, WANG XiaoYan & WANG GuanYu

52.Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure.

Solid-State Electronics, Vol.68, pp:98-102,2012.  Li liang, Yang Lin'an, Zhang Jincheng, Zhang Linxia, Dang Lisha, Kuang Qianwei, Hao Yue

53.Early effect of SiGe heterojunction bipolar transistors.

Solid-State Electronics,  Vol. 72, No. 6, pp:1~3,2012. Xiao-Bo Xu, He-Ming Zhang, Hui-Yong Hu, Jiang-Tao Qu

54.Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride.

Applied Physics Letters, Vol.100,No.14, pp:142105(3) ,2012. Wang Shulong, Liu Hongxia, Gao Bo, Cai Huimin

55.A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric.

Chinese Physics B, Vol.21, No.1, pp:017304(5) ,2012.  Feng Qian, Xing Tao, Wang Qiang, Feng Qing,Li Qian, Bi Zhiwei, Zhang Jin-Cheng, Hao Yue

56.Structural and optical investigation of nonpolar a-plane GaN grown by metal organic chemical vapour deposition on r-plane sapphire by neutron irradiation.

Chinese Physics B, Vol.21, No.2, pp:027802(5),2012.Xu Shengrui, Zhang Jinfeng, Gu Wenping, Hao Yue, Zhang Jincheng, Zhou Xiaowei, Lin Zhiyu, Mao Wei

57.A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs.

Chinese Physics B, Vol.21,No.10, pp: 107306(7) ,2012. Ma Fei, Liu Hongxia, Fan Jibin, and Wang Shulong

58.Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (11-22) GaN.

Chinese Physics Letters, Vol.29, No.1, pp:017803(3) ,2012. Xu Shengrui, Lin Zhiyu, Xue Xiaoyong, Liu Ziyang, Ma Juncai, Jiang Teng, Mao Wei, Wang Danghui

59.AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition.

Chinese Physics Letters, Vol.29, No.2, pp:028501(4), 2012. Bi Zhiwei, Hao Yue, Feng Qian, Gao Zhiyuan, Zhang Jincheng, Mao Wei, Zhang Kai, Ma Xiaohua, Liu Hongxia, Yang Lin'an, Mei Nan, Chang Yongming

60.Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric.

Chinese Physics Letters, Vol.29, No.12, pp:127301(4) ,2012. Hong-Xia Liu, Fei Ma.

61.Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metao organic chaemical vapor deposition.

Journal of Crystal Growth, Vol.343, No.1, pp:110-114,2012.Xue Junshuai, Zhang Jincheng, Zhang Wei, Li Liang, Meng Fanna, Lu Ming, Ning Jing, Hao Yue

62.Effective surface passivation of AlGaN/GaN heterostructures by using PH3 plasma treatment and HfO2 dielectric.

Phys. Status Solidi C, Vol.9, No.3-4, pp.924-937  ,2012.hang Chunfu, Hao Yue, Feng Qian

63.Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN.

Physics. Status Solidi B  , Vol.249, No.9,pp: 1761-1764,2012. Shulong Wang, Hongxia Liu, Bo Gao,Qingqing Zhuo.

64.Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3 gate dielectric.

Science China Technological Sciences  ,Vol.56, No.3, pp:629-632,2012. Feng Qian,Wang Qiang,Xing Tao,Li Qian,Hao Yue

65.Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC.

Science China Technological Sciences, Vol.55, No.12, pp:3401-4,2012.Qing-Wen Song , Yu-Ming Zhang, Yi-Men Zhang, Xiao-Yan Tang

66.Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs.

SCIENCE CHINA-INFORMATION SCIENCES, Vol.52, No.2, pp:473-4792012.  DUAN BaoXing ,YANG YinTang

67.Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1-xGex.

Science in China, Series G: Physics Mechanics and Astronomy, Vol.55,No.11,pp:2033-2037,2012. SONG JianJun, YANG Chao, ZHANG HeMing, HU HuiYong, ZHOU ChunYu,WANG Bin,

68.Improvements in (11-22) semipolar GaN crystal quality by graded superlattices.

THIN SOLID FILMS, Vol.520,No.6, pp1909-1912,2012.Xu shengrui , J.C. Zhang , Y.R. Cao , X.W. Zhou , J.S. Xue , Z.Y. Lin , J.C. Ma , F. Bao , Y. Hao

69.异质栅全耗尽应变硅金属氧化物半导体模型化研究

物理学报, Vol.61, No.1, pp: 017105(6), 2012.曹磊, 刘红侠, 王冠宇

70.Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors

物理学报, Vol.61, No.5, pp:057202(8),2012.吕玲,张进成,李亮,马晓华,曹艳荣,郝跃

71.Influence of polarization effects on photoelectric response of AlGaN/GaN heterojunction p-i-n photodetectors 

物理学报, Vol.61, No.5, pp:057802(7),2012.刘红侠, 高博, 卓青青, 王勇淮

72.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor

物理学报, Vol.61, No.16, pp: 166101(7) ,2012.李立, 刘红侠, 杨兆年

73.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET

物理学报, Vol.61, No.17, pp:177301(6), 2012.曹磊, 刘红侠

74.斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究

物理学报  , Vol.61, No.18, pp:186103(6) ,2012.林志宇; 张进成; 许晟瑞; 吕玲; 刘子扬; 马俊彩; 薛晓咏; 薛军帅; 郝跃

75.NMOS器件中单粒子瞬态电流收集机制的二维数值分析

物理学报  , Vol.61, No.21, pp:218501(7), 2012.卓青青, 刘红侠, 郝跃。

76.偏置条件对SOI NMOS器件总剂量辐照效应的影响

物理学报  , Vol.61, No.22, pp:220702(6) ,2012.卓青青, 刘红侠, 杨兆年, 蔡惠民, 郝跃

77.考虑量子效应的高k栅介质SOIMOSFET特性研究

物理学报, Vol.61, No.24, pp: 247303(6) ,2012.曹磊, 刘红侠

78.低剂量率60Co γ射线辐照下SOIMOS器件的退化机理

物理学报  , Vol.61, No.24, pp:246101(7) ,2012.商怀超, 刘红侠, 卓青青

79.栅长对PD SOI NMOS器件总剂量辐照效应影响的实验研究

物理学报  , Vol.61, No.24, pp:240703(6) ,2012.彭里, 卓青青, 刘红侠, 蔡惠民

80.A microstructure-based study on electromigration in Cu interconnects

物理学报  , Vol.61 ,No.1,pp:18501,2012.Wu Zhenyu,Yang Yintang,Chai Changchun,Liu Li,Peng Jie,Wei Jingtian

81.铜互连电迁移失效阻变特性研究

物理学报, Vol.61 ,No.24,pp:248501,2012.吴振宇, 董嗣万, 刘毅, 柴常春, 杨银堂

82.Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure

物理学报, Vol. 61, No. 2, pp:027202,2012.宋坤, 柴常春, 杨银堂, 张现军, 陈斌

83.The damage effect and mechanism of the bipolar transistor caused by microwaves

物理学报,Vol. 61, No. 7, pp:078501,2012.马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌

84.改进型异质栅对深亚微米栅长碳化硅MESFET特性影响

物理学报  , Vol. 61, No. 17, pp:177201,2012. 宋坤, 柴常春, 杨银堂, 贾护军, 陈斌, 马振洋

85.考虑晶粒尺寸效应的超薄(10-50nm)Cu电阻率模型研究

物理学报, Vol. 61, No. 1, pp:016802,2012. 王宁,董刚,杨银堂,陈斌,王凤娟,张岩

86.非对称Halo掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型 

物理学报, Vol.61, No.7,pp:078504,2012.李聪,庄奕琪,韩茹,张丽,包军林

87.高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究

物理学报, Vol.61,No.10 ,2012.游海龙,蓝建春,范菊平,贾新章,查薇

88.单轴、双轴应变Si拉曼谱应力模型

物理学报  , Vol.61,No.4,pp:047203-1~7,2012.王程、王冠宇、张鹤鸣、宋建军、杨晨东、毛逸飞、李永茂、胡辉勇、宣荣喜

89.新型高速半导体器件IMOS阈值电压解析模型 

物理学报  , Vol.61,No.4,pp:047303-1~5,2012.李妤晨、张鹤鸣、张玉明、胡辉勇、徐小波、秦珊珊、王冠宇

90.四方晶系应变Si空穴散射机制

物理学报, Vol.61,No5,pp:057304-1~6,2012.宋建军,张鹤鸣,胡辉勇,王晓艳,王冠宇

91.单轴应变Si导带色散关系解析模型

物理学报, Vol.61,No.9,pp:097103-1~8,2012.王冠宇、宋建军、张鹤鸣、胡辉勇、马建立、王晓艳

92.Poly-Si1-xGex栅应变Si N型金属-氧化物-半导体场效应管栅耗尽模型研究

物理学报, Vol.61,No.10,pp:107301-1~8,2012胡辉勇、雷帅、张鹤鸣、宋建军、宣荣喜、舒斌、王斌

93.应变Ge/Si1-xGex价带色散模型

物理学报  ,Vol.62(13)137104-1-7,2012.戴显英、杨程、宋建军、张鹤鸣、郝跃、郑若川

94.套刻偏差对4H-SiC浮动结JBS二极管的影响研究

物理学报, Vol. 61, No. 8,, pp. 088501-1-5,2012.汤晓燕, 戴小伟, 张玉明,张义门

95.F离子注入新型Al0.25Ga0.75N/GaN HEMT器件耐压分析

物理学报,Vol.61, No.22,pp:227302(1-7),2012.段宝兴,杨银堂,陈敬

96.新型Si3N4层部分固定正电荷AlGaN/GaNHEMTs器件耐压分析

物理学报  , Vol.61, No.24,pp:247302(1-6), 2012.段宝兴,杨银堂,陈敬

97.Design of a Wimedia/MBOA 0.13m CMOS front-end

Applied Mechanics and Meterials, Vol.198-199, pp:3006-3009,2012. Zhang Hong, Liang Yuan

98.Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

Journal of Semiconductors, Vol.33, No.1, pp:014002(5), 2012. Ma Juncai, Zhang Jincheng, Xue Junshuai, Lin Zhiyu, Liu Ziyang, Xue, Xiaoyong, Ma Xiaohua, Hao Yue

99.AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application

Journal of Semiconductors, Vol.33,No.3 pp:034003(4) ,2012. Wang Chong , He Yunlong , Zheng Xuefeng , Hao Yue ,Ma Xiaohua , and Zhang Jincheng

100Progress in Group III Nitride Semiconductor Electronic Devices.

Journal of Semiconductors, Vol.33, No.8, pp:081001(8) ,2012.  Hao Yue, Zhang Jinfeng, Shen Bo, Liu Xinyu

101.A novel high performance ESD power clamp circuit with a small area

Journal of Semiconductors, Vol.33, No.9, pp:095006(7), 2012.  Zhaonian Yang, Hongxia Liu, Li Li, Qingqing Zhuo

102.An empirical formula for yield estimation from singly truncated performance data of qualified semiconductor devices.

Journal of Semiconductors, Vol.33, No.21, pp:125008-1,2012.Liang Tao, Jia Xinzhang

103.Hole mobility of strained Si/(001)Si1-xGex

  Science in China, Vol. 55,No.1,pp:48–54,2012. Wang XiaoYan, Zhang HeMing, Ma JianLi, Wang GuanYu, Qu JiangTao

104.A fault-tolerant routing algorithm based on BIST for 2D-mesh network-on-chip without using virtual channels

电子学报  , Vol.40, No.5, pp:983-989,2012. Yao Lei,Cai Jueping1,LiZan, Zhang Hailin,Wang,Shao Li

105.MQ编码算法优化及高速VLSI结构设计与实现

电子学报  , Vol.40,No.11, pp:2158-2164,2012.邸志雄,史江义,郝跃,逄杰,刘凯,李云松

106.考虑通孔和边缘效应的互连网络热电分析

计算物理  , Vol.29, No.1,2012.王宁,董刚,杨银堂,王增,王凤娟,丁灿

107.4H-SiC晶体中VSi本征缺陷研究

人工晶体学报,Vol. 41, No. 4, pp:1011~1014,2012.程萍,张玉明,张义门

108.2D-Mesh结构片上网络无虚通道容错路由算法

西安电子科技大学学报, Vol.99, No.16,pp: 162105-3,2012.姚磊,蔡觉平

109.机械致单轴应变SOI晶圆的制备

西安电子科技大学学报, Vol.39(3)209-212,2012.戴显英、王琳、杨程、郑若川、张鹤鸣、郝跃

110.表面Ge沟道pMOSFET阈值电压模型

西安电子科技大学学报,Vol.39(4) 94-97,2012.戴显英、李志、张鹤鸣、郝跃、王琳、查冬、王晓晨、付毅初

111.锗硅减压化学气相淀积的CFD模型及仿真

西安电子科技大学学报, Vol.39(5)186-191,2012.戴显英、郑若川、郭静静、张鹤鸣、郝跃、邵晨峰、吉瑶、杨程

112.应变Si1-xGex(100)电子散射几率 

西安电子科技大学学报, Vol.39,No.3,P86~89,2012.赵丽霞、张鹤鸣、宣荣喜、胡辉勇

113.Investigation of the influence of deposition temperature on ALD deposite HfO2 high k gate material

Xi'an Dianzi Keji Daxue Xuebao, Vol.39,No.2, pp:164-167,2012. Kuang Qianwei, Liu Hongxia, Fan Jiwu, Ma Fei, Zhang Yanlei

114.Optimization of zero-crossing distortion in the CRM PFC converter with one cycle control

Xi'an Dianzi Keji Daxue Xuebao, Vol.39, No.2,pp:1082012. Li Yani, Yang Yintang, Zhu Zhangming, Qiang Wei, Liu Lianxi

 打印本页 关闭窗口  
© 2013- 西安电子科技大学宽带隙半导体国家重点实验室 版权所有
地    址:西安市太白南路2号
电    话:86-029-88202073  传    真:029-88202073-616
E_mail:pjma@xidian.edu.cn
邮    编:710071
Design & Support 技术支持:新势力网络
西安电子科技大学微电子学院  /  西安电子科技大学科学研究院  /
宽禁带半导体材料教育部重点实验室  /
中科院上海微系统与信息所  /  清华大学信息科学技术学院  /
中科院半导体所  /  西安中为光电科技公司  /
中科院微电子所  /
北京大学微电子院  /